ZTX651 Search Results

ZTX650

Abstract: ZTX651 FERRANTI SE60 transistor a7n ZTX652 ZTX653 Scans-00107861
Contextual Info: FERRANTI $ semiconductors ZTX650 ZTX651 ZTX652 ZTX653 N PN S ilic o n P lan ar M edium P o w e r T ra n sisto rs FEATURES • 1.5W Power dissipation at Tamb = 25*Cf • • • • • • • • 2A continuous lc Excellent gain characteristics to 2A High V CE0: up to 100 volts

FXT651

Abstract: ZTX651 DSA0037565
Contextual Info: NPN SILICON PLANAR MEDIUM POWER TRANSISTOR FXT651 ISSUE 1 – MARCH 94 FEATURES * 60 Volt VCEO * 2 Amps continuous current * Low saturation voltage * Ptot= 1 Watt B C E E-Line TO92 Compatible REFER TO ZTX651 FOR GRAPHS ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL

BC337B

Abstract: m 60 n 03 g10 BC327C
Contextual Info: SEM ICO N D U CTOR DICE NPN MEDIUM POWER Volts Volts ZTX653 ZTX453 ZT91 2N1893 ZTX652 ZTX452 MPSA06 ZTX651 ZTX451 BFY50 2N1613 2N1711 ZT90 MPSA05 ZTX650 ZTX450 BFY51 BC337A BC337B BC337C ZTX449 BFY52 ZTX649 + V CES V CE sat ^CBO at at lc Volts Min. Max. mA Volts Volts mA

ztx653

Abstract: 2TX650 SE 130 ztx651 ZTX652 ztx650
Contextual Info: NPN Silicon Planar Medium Power Transistors Z T X 650 ZTX651 ZTX652 ZTX653 FEATURES • 1 .5 W p o w e r d issipation a t T amb = 2 5 ° C * • 2 V co n tinu o u s ic • Excellent gain ch a ra cte ristics to 2A • High V CE0: up to 10 0 V • L o w sa tu ra tio n voltages

BO 241 A

Contextual Info: NPN SILICON PLANAR M EDIUM POWER TRANSISTORS ZTX650 ZTX651 ISSU E 2 - J U L Y 94_ FEATURES * 60 Volt V CE0 * 2 Am p continuous current * Low saturation voltage * Ptot= l Watt E E-Line T092 Compatible ABSOLUTE M A X IM U M RATINGS.

ztx651

Abstract: ZTX650 ztx651 equivalent ztx650 equivalent ZTX651-NPN transistor equivalent ZTX651 DSA003771
Contextual Info: ZTX650 ZTX651 PARAMETER ZTX650 SYMBOL MIN. TYP. 140 ZTX651 MAX. MIN. TYP. 175 140 UNIT CONDITIONS. MAX. 175 MHz Transition Frequency fT Switching Times ton 45 45 ns toff 800 800 ns 30 Output Capacitance Cobo 30 IC=100mA, VCE=5V f=100MHz IC=500mA, VCC=10V IB1=IB2=50mA

Contextual Info: NPN SILICON PLANAR MEDIUM POWER TRANSISTOR FXT651 ISSUE 1 - MARCH 94_ FEATURES * 60 Volt V,CEO 2 Amps continuous current Low saturation voltage P,o,= 1 W a tt REFER TO ZTX651 FOR GRAPHS ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage

ZTX650

Abstract: ZTX651 ZTX652 605A transistor a7n 100-C ZTX653 ferranti Scans-00107862
Contextual Info: FERRANTI ZTX650 ZTX651 ZTX652 ZTX653 $ semiconductors NPN Silicon Planar M e d iu m Power Transistors FEATURES • 1.5W Power dissipation at Tamb = 25*Cf • 2A continuous lc • Excellent gain characteristics to 2A • High V CE0: up to 100 volts • Low saturation voltages

ZTX650

Abstract: ztx651
Contextual Info: NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ZTX650 ZTX651 ISSUE 2 -JU L Y 94_ FEATURES * 60 Volt V CE0 * 2 A m p continuous current * Low saturation voltage * r ,o t = 1 W a t t ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage

Contextual Info: DISCONTINUED PLEASE USE ZTX651 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR FXT651 ISSUE 1 – MARCH 94 FEATURES * 60 Volt VCEO * 2 Amps continuous current * Low saturation voltage * Ptot= 1 Watt B C E E-Line TO92 Compatible REFER TO ZTX651 FOR GRAPHS ABSOLUTE MAXIMUM RATINGS.

Contextual Info: ZTX651M1 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)60è V(BR)CBO (V)80 I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)175 I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.100 h(FE) Max. Current gain.300

Contextual Info: NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 1 - MARCH 94_ FEATURES * 60 Volt VCE0 * 2 Am ps continuous current * Low saturation voltage * Pt0,= 1Watt REFER TO ZTX651 FOR GRAPHS ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage

Contextual Info: Not Recommended for New Design Please Use ZTX449 / ZTX651 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS 2N6714 2N6715 ISSUE 1 – MARCH 94 FEATURES * 40 Volt VCEO * Gain of 50 at IC= 1 Amp * Ptot= 1 Watt C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS.

ZTX651

Contextual Info: Not Recommended for New Design Please Use ZTX651 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR FXT651 ISSUE 1 – MARCH 94 FEATURES * 60 Volt VCEO * 2 Amps continuous current * Low saturation voltage * Ptot= 1 Watt B C E E-Line TO92 Compatible REFER TO ZTX651 FOR GRAPHS

BC337B

Abstract: BC338B BC338C BC327B BC328B BC337C ZTX550 BFV52 ZTX751 BFY50
Contextual Info: ELEC TRIC AL CHARACTERISTICS N.P.N. M E D IU M POW ER h "ht V cbo VcEO ICBC Min. Min. Max.atVcB @ lc Dice Type V V nA V Min. Max. m A ZTX653 ZTX453 ZTX652 ZTX452 M P SA 0 6 ZTX651 ZTX451 BFY50 M P SA 0 5 ZTX650 ZTX450 BFY51 BC337A BC337B BC337C BFV52 BC338A

Contextual Info: SbE V m T T 7 GS 7 Ô 0 Q0 7 D S 0 T23 H Z E T B T - '¿ / l- O i SEM ICO N D U CTOR DICE NPN MEDIUM POWER V CBO V CEO hFE at •CBO Min. Min. Max. at V CB Dice type Volts Volts ZTX653 ZTX453 ZT91 2N1893 ZTX652 ZTX452 MPSA06 ZTX651 ZTX451 BFY50 2N1613 2N1711

transistor ztx 651

Contextual Info: A Product Line of Diodes Incorporated ZTX651 60V NPN MEDIUM POWER TRANSISTOR IN E-LINE Features Mechanical Data • • • • • • BVCEO > 60V IC = 2A High Continuous Collector Current ICM = 6A Peak Pulse Current TJ up to +200°C for High Temperature Operation

Contextual Info: ZTX651 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)60è V(BR)CBO (V)80 I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)175 I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.100 h(FE) Max. Current gain.300

m 60 n 03 g10

Contextual Info: ZETEX SEMICONDUCTORS IbE D • Tï7057fl DOOtfl? 4 ■ ZETB SEMICONDUCTOR DICE ELECTRICAL CHARACTERISTICS PNP SWITCHING TRANSISTORS 2N2907A 2N2907 BCY70 BCY71 BCY72 2N4403 2N3906 2N2894 ZTX510 VCbo Min V CE0 Min T on Max 31 Pice type Volts Volts ns . ns 60

ZTX751

Abstract: ZTX651 ZTX551 ZTX753 ZTX337 ZTX452 MPSA06 MPSA56 ZTX453 ZTX454
Contextual Info: TABLE 7 : NPN/PNP MEDIUM POWER The transistors shown in this table have been designed to operate and provide useful gain at current levels up to 2 amps with power dissipation capabilities in excess of 1000 mW at 25°C ambient temperature. Typical application areas include: Audio Frequency Drivers and Output Stages, Relay Switching, etc.

BC338C

Abstract: 2N1893 2N2102 2N2405 2N4036 BFX84 BFX85 ZT86 ZT88 ZT91
Contextual Info: NPN LOW LEVEL TABLE 1 - NPN SILICON PLANAR LOW LEVEL TRANSISTORS The devices shown in this table are low level transistors designed for small and medium signal, low and medium power amplification from DC to radio frequencies in Commercial, Industrial and Military

BC337b

Abstract: bc327b 2N2102 2N3262 2N4036 BCY65E BFX84 BFX85 ZT86 ZT88
Contextual Info: NPN SW ITCHING TABLE 3 - NPN SILICON PLANAR MEDIUM AND HIGH SPEED SWITCHING TRANSISTORS The devices shown in this table are characterised for medium and high speed switching applications in Commercial, Industrial and Military equipments. The devices are listed in order of decreasing Breakdown Voltage VCE0 , decreasing Collector

BCY56

Abstract: 2N1131 2N1132 2N3053 2N4037 2N696 2N697 BC107 BC177 BFY51
Contextual Info: < Type o< OD NPN LOW LEVEL V ceo M ax *c M ax V CE sat| at V mA V 'c mA Min fT at hFE at Pto, at = 2ag*C Iß M in M ax 'c m A M Hz m A mW mA 2N3053 60 40 700 1.4 150 15 50 250 150 2N696 60 40 500 1.5 150 15 20 60 120 150 150 Continued Package Com ple­ ment

ZTX451M1

Abstract: ZTX649M1 ZTX651M1 ZTX653M1 ZTX655M1 ZTX657M1 ZTX749M1 ZTX751M1 ZTX753M1 ZTX755M1
Contextual Info: bOE D 4 • WD57Û 0007b63 ßb5 ■ Z E T B CENTRE BASE E-LINE 'M 1' ZETEX SEMI CONDUCTORS E-LINE " M 1 " SPECIFICATIONS BIPOLAR Super E-line M l Transistors Max. Cont. Max. Type V at Min. f T at •c •c hFE ' cm V CB0 VcEO V Max. VC£(satl at mA A V •b