ZTX653 Search Results

ZTX650

Abstract: ZTX651 FERRANTI SE60 transistor a7n ZTX652 ZTX653 Scans-00107861
Contextual Info: FERRANTI $ semiconductors ZTX650 ZTX651 ZTX652 ZTX653 N PN S ilic o n P lan ar M edium P o w e r T ra n sisto rs FEATURES • 1.5W Power dissipation at Tamb = 25*Cf • • • • • • • • 2A continuous lc Excellent gain characteristics to 2A High V CE0: up to 100 volts

ZTX653 equivalent

Abstract: FXT653 ZTX653 DSA0037567
Contextual Info: NPN SILICON PLANAR MEDIUM POWER TRANSISTOR FXT653 ISSUE 1 – MARCH 94 FEATURES * 100 Volt VCEO * 2 Amps continuous current * Low saturation voltage * Ptot= 1 Watt B C E E-Line TO92 Compatible REFER TO ZTX653 FOR GRAPHS ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL

Contextual Info: ZTX653DCSM NPN DUAL TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches 1 4 A 6 5 6.22 ± 0.13 (0.245 ± 0.005) 0.23 rad. (0.009) • DUAL SILICON PLANAR NPN 4.32 ± 0.13

BC337B

Abstract: m 60 n 03 g10 BC327C
Contextual Info: SEM ICO N D U CTOR DICE NPN MEDIUM POWER Volts Volts ZTX653 ZTX453 ZT91 2N1893 ZTX652 ZTX452 MPSA06 ZTX651 ZTX451 BFY50 2N1613 2N1711 ZT90 MPSA05 ZTX650 ZTX450 BFY51 BC337A BC337B BC337C ZTX449 BFY52 ZTX649 + V CES V CE sat ^CBO at at lc Volts Min. Max. mA Volts Volts mA

ztx653

Abstract: 2TX650 SE 130 ztx651 ZTX652 ztx650
Contextual Info: NPN Silicon Planar Medium Power Transistors Z T X 650 ZTX651 ZTX652 ZTX653 FEATURES • 1 .5 W p o w e r d issipation a t T amb = 2 5 ° C * • 2 V co n tinu o u s ic • Excellent gain ch a ra cte ristics to 2A • High V CE0: up to 10 0 V • L o w sa tu ra tio n voltages

ZTX653

Abstract: 2n6731
Contextual Info: Not Recommended for New Design Please Use ZTX653 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR 2N6731 ISSUE 1 – MARCH 94 FEATURES * 80 Volt VCEO * Gain of 100 at IC = 350 mA * Ptot=1 Watt C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL

Contextual Info: DISCONTINUED PLEASE USE ZTX653 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR FXT653 ISSUE 1 – MARCH 94 FEATURES * 100 Volt VCEO * 2 Amps continuous current * Low saturation voltage * Ptot= 1 Watt B C E E-Line TO92 Compatible REFER TO ZTX653 FOR GRAPHS ABSOLUTE MAXIMUM RATINGS.

Contextual Info: ZTX653 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)100è V(BR)CBO (V)120 I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)2.5 Maximum Operating Temp (øC)175 I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.100 h(FE) Max. Current gain.300

Contextual Info: COMPLEMENTARY SILICON PLANAR EPITAXIAL NPN/PNP TRANSISTOR ZTX653/ZTX753DCSM • Complimentary Silicon Planar NPN/PNP Transistors • Hermetic Ceramic Surface Mounted Package. • Hi-Rel Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated

zxt753

Abstract: ZTX653 equivalent ZTX753 data ZTX653 ZTX653DCSM ZTX753 ZTX753DCSM 500mAVCC
Contextual Info: ZTX653DCSM ZTX753DCSM NPN/PNP DUAL TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICTIONS MECHANICAL DATA Dimensions in mm inches 1.40 ± 0.15 (0.055 ± 0.006) 1.65 ± 0.13 (0.065 ± 0.005) 1 4 4.32 ± 0.13 (0.170 ± 0.005)

dual npn 500ma

Abstract: ZTX653DCSM
Contextual Info: ZTX653DCSM NPN DUAL TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches 3 1 4 A 6 5 6.22 ± 0.13 (0.245 ± 0.005) 0.23 rad. (0.009) A= • DUAL SILICON PLANAR NPN 4.32 ± 0.13

Contextual Info: ZTX653M1 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)100è V(BR)CBO (V)120 I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)175 I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.100 h(FE) Max. Current gain.300

ZTX650

Abstract: ZTX651 ZTX652 605A transistor a7n 100-C ZTX653 ferranti Scans-00107862
Contextual Info: FERRANTI ZTX650 ZTX651 ZTX652 ZTX653 $ semiconductors NPN Silicon Planar M e d iu m Power Transistors FEATURES • 1.5W Power dissipation at Tamb = 25*Cf • 2A continuous lc • Excellent gain characteristics to 2A • High V CE0: up to 100 volts • Low saturation voltages

ZTX653

Abstract: NPN Transistor 1A 100V
Contextual Info: Not Recommended for New Design Please Use ZTX653 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR FXT653 ISSUE 1 – MARCH 94 FEATURES * 100 Volt VCEO * 2 Amps continuous current * Low saturation voltage * Ptot= 1 Watt B C E E-Line TO92 Compatible REFER TO ZTX653 FOR GRAPHS

ztx653

Contextual Info: NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 2 - JULY 94_ FEATURES 100 Volt vCE0 * * * 2 Amp continuous current Low saturation voltage * P,ot=1 W att ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage ZTX653 UNIT

ZTX653

Abstract: ztx652 Zetex ZTX653
Contextual Info: ZTX652 Not Recommended for New Design Please Use ZTX653 ZTX652 ZTX653 ISSUE 2 – JULY 94 FEATURES * 100 Volt VCEO * 2 Amp continuous current * Low saturation voltage * Ptot=1 Watt ELECTRICAL CHARACTERISTICS at Tamb = 25°C unless otherwise stated . PARAMETER

Contextual Info: ZTX653DCSM NPN DUAL TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches 3 1 4 A 6 5 6.22 ± 0.13 (0.245 ± 0.005) 0.23 rad. (0.009) A= • DUAL SILICON PLANAR NPN 4.32 ± 0.13

Ztx653

Contextual Info: Not Recommended for New Design Please Use ZTX449 / ZTX453 / ZTX653 2N6716 2N6717 2N6718 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 1 – MARCH 94 FEATURES * 100 Volt VCEO * Gain of 20 at IC = 0.5 Amp * Ptot=1 Watt C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS.

ztx653

Contextual Info: COMPLEMENTARY SILICON PLANAR EPITAXIAL NPN/PNP TRANSISTOR ZTX653/ZTX753DCSM • Complimentary Silicon Planar NPN/PNP Transistors • Hermetic Ceramic Surface Mounted Package. • Hi-Rel Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated

ZTX653LCC4

Contextual Info: ZTX653LCC4 NPN TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches 9.14 (0.360) 8.64 (0.340) 1.27 (0.050) 1.07 (0.040) ≈ 2.16 (0.085) 12 13 14 15 16 1.39 (0.055) 1.02 (0.040)

BC337B

Abstract: BC338B BC338C BC327B BC328B BC337C ZTX550 BFV52 ZTX751 BFY50
Contextual Info: ELEC TRIC AL CHARACTERISTICS N.P.N. M E D IU M POW ER h "ht V cbo VcEO ICBC Min. Min. Max.atVcB @ lc Dice Type V V nA V Min. Max. m A ZTX653 ZTX453 ZTX652 ZTX452 M P SA 0 6 ZTX651 ZTX451 BFY50 M P SA 0 5 ZTX650 ZTX450 BFY51 BC337A BC337B BC337C BFV52 BC338A

ZTX653

Abstract: ZTX653 equivalent ZTX652 equivalent ZTX652 DSA003771
Contextual Info: ZTX652 ZTX653 ISSUE 2 – JULY 94 FEATURES * 100 Volt VCEO * 2 Amp continuous current * Low saturation voltage * Ptot=1 Watt ELECTRICAL CHARACTERISTICS at Tamb = 25°C unless otherwise stated . PARAMETER ZTX652 SYMBOL MIN. TYP. Transition Frequency fT Switching Times

Contextual Info: SbE V m T T 7 GS 7 Ô 0 Q0 7 D S 0 T23 H Z E T B T - '¿ / l- O i SEM ICO N D U CTOR DICE NPN MEDIUM POWER V CBO V CEO hFE at •CBO Min. Min. Max. at V CB Dice type Volts Volts ZTX653 ZTX453 ZT91 2N1893 ZTX652 ZTX452 MPSA06 ZTX651 ZTX451 BFY50 2N1613 2N1711

Contextual Info: NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 1 - MARCH 94_ FEATURES * * 100 Volt VCE0 2 Am ps continuous current * Low saturation voltage * Ptct= 1 W att REFER TO ZTX653 FOR GRAPHS ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage