2N6718 Search Results

2N6718

Abstract: 2n6717 2N6716 NPN Transistor 1A 100V 2n6718 equivalent npn transistor 100v min NPN Transistor VCEO 80V 100V hfe 100 100v 1a transistor VCE 100V transistor transistor 2n6718
Contextual Info: 2N6716 / 2N6717 / 2N6718 1A , 100V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES   TO-92 High Voltage：VCEO = 100V Gain of 20 @ IC = 0.5A G H Emitter

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N6718 NPN SILICON TRANSISTOR NPN GENERAL PLANAR TRANSISTOR  DESCRIPTION The UTC 2N6718 is designed for general purpose medium power amplifier and switching applications.  FEATURES * High Power: 850mW * High Current: 1A

2N6718

Abstract: IC350 2N6718L
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD. 2N6718 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR DESCRIPTION The UTC 2N6718 is designed for general purpose medium power amplifier and switching applications. FEATURES 1 *High Power: 850mW *High Current: 1A

2N6718

Contextual Info: UTC 2N6718 NPN EPITAXIAL SILICON TRANSISTOR NPN GENERAL PLANAR TRANSISTOR DESCRIPTION The UTC 2N6718 is designed for general purpose medium power amplifier and switching applications. FEATURES *High Power: 850mW *High Current: 1A 1 TO-92 1:EMITTER 2: COLLECTOR

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 2N6718 TRANSISTOR NPN 1. EMITTER FEATURES z General Purpose Switching Application 2. BASE 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N6718 NPN SILICON TRANSISTOR NPN GENERAL PLANAR TRANSISTOR  DESCRIPTION The UTC 2N6718 is designed for general purpose medium power amplifier and switching applications.  FEATURES * High Power: 850mW * High Current: 1A

2N6730

Abstract: 2N6728 SE194 2N6716 7292n 2n 6718 2N6718 SE-194
Contextual Info: Silicon Planar Medium Power Transistors NPN 2N6716 2N6717 2N6718 PNP 2N6728 2N6729 2N6730 FEATURES • High V CE ratin g s up to 1 00 vo lts • Exceptional p o w e r dissip atio n cap a bility - 2 W @ T c a s e = 2 5 °C - 1W @ T amb = 2 5 °C • h FE specified up to 5 0 0 m A

2N6718 TO-237

Abstract: 2n6718 transistor 2n6718 IC350
Contextual Info: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR 2N6718 TO-237 Plastic Package General Purpose Medium Power Amplifier ABSOLUTE MAXIMUM RATINGS Ta=25ºC DESCRIPTION SYMBOL VCBO Collector Base Voltage

Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR EPITAXIAL TRANSISTOR 2N6718 TO-237 Plastic Package General Purpose Medium Power Amplifier ABSOLUTE MAXIMUM RATINGS Ta=25ºC

Contextual Info: UTC 2N6718 NPN EPITAXIAL SILICON TRANSISTOR NPN GENERAL PLANAR TRANSISTOR DESCRIPTION The UTC 2N6718 is designed for general purpose medium power amplifier and switching applications. FEATURES *High Power: 850mW *High Current: 1A 1 TO-92 1:EMITTER 2: COLLECTOR

2N6716

Abstract: 2N6718
Contextual Info: 2N6716 2N6717 2N6718 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 1 - MARCH 94_ FEATURES * 100 Volt V,CEO G ain o f 20 at lc = 0.5 A m p Ptot=1 W att E E-Line T092 Compatible ABSOLUTE M A X IM U M RATINGS. SYM BO L PARAM ETER Collector-Base Voltage

2N6718

Abstract: 2N6716 2N6717 ic-250mA DSA003749
Contextual Info: 2N6716 2N6717 2N6718 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 1 – MARCH 94 FEATURES * 100 Volt VCEO * Gain of 20 at IC = 0.5 Amp * Ptot=1 Watt C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL 2N6716 Collector-Base Voltage VCBO

2N6718 NATIONAL SEMICONDUCTOR

Abstract: T0-237 NSDU07 bc640 to237 2N6717 T0237 2N6730 2N6718 mpsa06 2N3019
Contextual Info: bflE J> m fc,SD113D ODBTSIS STT • NSC5 NATL SEHICOND D I S C R E T E Devices V C£0(su*l> 100 PUP NPN 2N6553 2N6718 80 2N6730 mA (MHz) Min IDA NF (dB) Max P d (Amb) Package (mW) Max Min Max 1000 80 250 50 75 100 T0-202(55) 1333 1000 50 250 250 50 200

Ztx653

Contextual Info: Not Recommended for New Design Please Use ZTX449 / ZTX453 / ZTX653 2N6716 2N6717 2N6718 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 1 – MARCH 94 FEATURES * 100 Volt VCEO * Gain of 20 at IC = 0.5 Amp * Ptot=1 Watt C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS.

Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer TO-237 Plastic Package 2N6718 NPN SILICON PLANAR EPITAXIAL TRANSISTOR Designed for General Purpose Medium Power Amplifier and Switching Circuits.

ztx614

Abstract: 2n6718 2N6714 2N6715 2N6716 2N6717 2N6724 2N6725 2N6726 2N6727
Contextual Info: TABLE 10: 2N6700 SERIES MEDIUM POWER TRANSISTORS Max. Cont. Max. PNP NPN 2N6714 2N6715 2N6724 2N6725 2N6716 2N6717 2N 6731 2N6718 V cbo 2N6726 2N6727 — — 2N6728 2N6729 2N6732 2N6730 •c V CEO Max. V CEIsat at •c m 'c mA V V A A V 40 50 50 60 60 80

2N6715

Abstract: 2N6716 2N6717 2N6718 2N6719 2N6731 2N6733 2N6734 2N6735 CIL2229
Contextual Info: TO-237 Plastic Package Transistors NPN Max mum Rating s Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) Type ^CBO No. ^CE ^EBO (V) Min (V) Min (V) Min @Tc=25 c 50 40 5 0.75 2N6715 2N6716 2N6717 2N6718 2N6719 2N6731 2N6733 2N6734 2N6735

Contextual Info: 2N6718 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)100 I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)2.0 Maximum Operating Temp (øC)150þ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)100 V(CE)sat Max. (V).50 @I(C) (A) (Test Condition)250m

2N6718

Abstract: 80V 1A NPN Transistor TO-92 2N6718L npn transistor to 92 TO-126C
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N6718 NPN SILICON TRANSISTOR NPN GENERAL PLANAR TRANSISTOR 1 SOT-89 DESCRIPTION The UTC 2N6718 is designed for general purpose medium power amplifier and switching applications. 1 TO-126C FEATURES * High Power: 850mW * High Current: 1A

Contextual Info: 2N6716 2N6717 2N6718 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 1 - MARCH 94_ FE A T U R E S * 100 Volt V,CEO Gain of 20 at lc = 0.5 A m p P ,o t= 1 Watt E E-Line T092 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL

T1P42C

Contextual Info: TO-220 PIN CONFIGURATION 1. BASE 2 . COLLECTOR 3. EMITTER 4. COLLECTOR c DIM E ,01 0 -I A B C D E F G H J K L M N 3 G MIN MAX 14,42 9,63 3,56 16.51 10,67 4,83 0,90 1,40 3,88 2,79 3,43 0,56 14,73 6,35 2,92 - 1,15 3,75 2,29 2,54 12,70 - 2,03 - 7 31,24 DEG TO-220 Power Package Transistors NPN

3 phase IGBT inverter design by ir2130

Abstract: IR2130 INVERTER SCHEMATIC 3 phase inverter ir2130 IR2130 APPLICATION NOTE 3 phase brushless dc control ir2130 3 phase inverter schematic diagram ir2130 schematic diagram 110v dc motor speed controller 2n6718 equivalent ML4425 DC 74HC04
Contextual Info: June 1996 Application Note 43 Using the ML4425/ML4426 BLDC Motor Controllers by John DeFiore INTRODUCTION THEORY OF OPERATION The purpose of this document is to explain the theory and application of Micro Linear’s ML4425 and ML4426 brushless DC motor controller IC’s, with speed control. It

1500 rpm 24V BLDC motor

Abstract: ML4425 Micro Linear Application Note ML4425 ML4425C Sensorless BLDC Motor Controller ML4425
Contextual Info: May 1997 ML4425/ML4426 Sensorless BLDC PWM Motor Controller GENERAL DESCRIPTION FEATURES The ML4425/ML4426 PWM motor controllers provide all of the functions necessary for starting and controlling the speed of delta or wye wound Brushless DC Motors BLDC without

BF963

Abstract: 1N4004 SOD-123 BC547 smd BB409 2n2907 smd BAT16-046 1N4148 2N2907 SOT-23 1N4148 SOD-123 2n2222 smd
Contextual Info: Cross Reference Leaded Devices SMD-Packages SOD-123 1N4001 1N4002 1N4003 1N4004 1N4001 2x 1N4002 (2x) 1N4003 (2x) 1N4004 (2x) 1N4148 1N4148 (2x) SOD-323 SCD-80 SOT-23 SOT-323 SOT-343 SOT-363 SCT-595 BAW 78 M BAS 16-02W BAS 16-03W BAS16 BAL/BAR74 BAL/BAR99