2N6726 Search Results

2N6730

Abstract: 2N6719 2N6714 2N6715 2N6716 2N6717 2N6718 2N6726 2N6727 2N6728
Contextual Info: Power Transistors TO-237 Case Ò Z TYPE ic PD A (W) BVCBO BVCEO @ h FE Ic VCE(SAT) @ IC fT *b v c e s NPN PNP MAX (V) (V) MIN MIN MIN (mA) MAX (V) (mA) MAX (MHz) MIN 2N6714 2N6726 2.0 2.0 40 30 50 250 1,000 0.5 1,000 50 2N6715 2N6727 2.0 2.0 50 40 50 250

CENW64

Abstract: 2N6714 2N6730 2N6715 2N6716 2N6717 2N6718 2N6719 2N6726 2N6727
Contextual Info: Pow er T ran sistors TO-237 Case Z Ò TYPE ic PD A (W) BVCBO BVCEO @ h FE Ic i VCE(SAT) @ IC fT *b v c e s NPN PNP MAX (V) (V) MIN MIN MIN (V) (mA) MAX (mA) MAX (MHz) MIN 2N6714 2N6726 2.0 2.0 40 30 50 250 1,000 0.5 1,000 50 2N6715 2N6727 2.0 2.0 50 40 50

2n6726

Abstract: 2n6727
Contextual Info: 2N6726 2N6727 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 1 - MARCH 94 FEATURES * * 4 0 V o ltV CEO Gain of 50 at lc : 1 Amp * Ptot=1 Watt E-Line T092 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL 2N6726 Collector-Base Voltage V C BO -40 Collector-Emitter Voltage

2N6726

Contextual Info: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company PNP SILICON PLANAR EPITAXIALTRANSISTOR 2N6726 TO-237 Plastic Package General Purpose Medium Power Amplifier ABSOLUTE MAXIMUM RATINGS Ta=25ºC DESCRIPTION SYMBOL VCBO Collector -Base Voltage

Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer PNP SILICON PLANAR EPITAXIALTRANSISTOR 2N6726 TO-237 Plastic Package General Purpose Medium Power Amplifier ABSOLUTE MAXIMUM RATINGS Ta=25ºC

2sc498

Abstract: 2SC875 2SA503 2sc1175 FT501 2N6428 2SA532 2SA606 2sa708 2N6714
Contextual Info: Medium Power Amplifiers and Switches TYPE NO. RITY HFE MAXIMUM RATINGS POLA­ CASE Pd IC VCEO mW (A) (V) min VCE(sat) fT Cob COMPLE­ min max MENTARY IC VCE max max (mA) (V) (V) (A) (MHz) (PF> TYPE . 2N6428 2N6714 2N6715 2N6716 2N6726 N N N N P TO-92A TO-237

Contextual Info: PNP SILICON PLANAR MEDIUM POWER TRANSISTORS 2N6726 2N6727 ISSUE 1 - MARCH 94_ FEATURES * 40 Volt V,CEO Gain of 50 at lc = 1 Amp P,0,=1 Watt E-Line T092 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL 2N6726 2N6727 UNIT Collector-Base Voltage

2N6726

Abstract: 2N6714 2N6727 SE192 TRANSITON
Contextual Info: Silicon Planar Medium Power Transistors 2N6715 2N6727 NPN 2N6714 PNP 2N6726 FEATU RES • Exceptional p ow er dissipation capability -2 W @ T case = 25°C - 1 W @ T amb = 2 5 ° C • h FE specified up to 1A • L o w saturation volatages D E S C R IP T IO N

2N671A

Abstract: 2N671 2N6727 2n671 transistor 2N6715 2N6726 TRANSISTOR 726 2N6714
Contextual Info: Datasheet Central 2N6714 2N6726 Semiconductor Corp. 2N6715 2N6727 NPN PNP COMPLEMENTARY SILICON POWER TRANSISTOR 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC T0-237 CASE Manufacturers of World Class Discrete Semiconductors

Contextual Info: Power Transistors TO-237 Case TYPE NO. ic PD BVCBO BVCEO Ic hRE VCE SAT @ IC fT *b v c e s (A) NPN PNP m MAX (n»A) (V) (V) MIN MIN MIN MAX 00 <mA) MAX 2N6714 2N6726 2.0 2.0 40 30 50 250 1,000 2N6715 2N6727 2.0 2.0 50 40 50 250 2N6716 2N6728 2.0 2.0 60

2N6714

Abstract: 2N6726 2N6727 92GU51 92GU51A 30C40
Contextual Info: 92GU51.51A 2N6726.27 PNP POWER TRANSISTORS -30- -40 VOLTS 2 AMPS, 1.2 WATTS COMPLEMENTARY TO THE 2N6714,15/92GU01, 01A SERIES Applications: • Class “B” audio outputs/drivers. • General purpose switching and lamp drive in industrial and automotive circuits.

2n6718

Abstract: 2N6719 2N6714 2N6715 2N6716 2N6717 2N6720 2N6721 2N6722 2N6723
Contextual Info: Power Transistors TO-237 Case TYPE NO. IC PD A (W) MAX BVCBO (V) MIN BVCEO *BVCES (V) MIN hFE @ IC VCE(SAT) @ IC MIN MAX fT (A) (V) MAX (A) (MHz) MIN 250 1,000 0.5 1,000 50 50 250 1,000 0.5 1,000 50 50 250 250 0.35 250 50 NPN PNP 2N6714 2N6726 2.0 2.0 40

2N6715

Abstract: 2N6714 2N6726 92GU01
Contextual Info: 92GU01.01A 2N6714.15 NPN POWER TRANSISTORS 30-40 VOLTS 2 AMP, 1.2 WATTS COMPLEMENTARY TO THE 2N6726, 27/92GU51, 51A SERIES Applications: • Class “B ” audio outputs/drivers • General purpose switching and lamp drive in industrial and automotive circuits.

2N6726

Contextual Info: Not Recommended for New Design Please Use ZTX549 / ZTX751 2N6726 2N6727 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 1 – MARCH 94 FEATURES * 40 Volt VCEO * Gain of 50 at IC = 1 Amp * Ptot=1 Watt C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS.

2N6726

Abstract: 2N6727
Contextual Info: 2N6726 2N6727 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 1 – MARCH 94 FEATURES * 40 Volt VCEO * Gain of 50 at IC = 1 Amp * Ptot=1 Watt C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage VCBO 2N6726 -40 2N6727

2sc1175

Abstract: 2SC875 2N6728 2SA606 2N6714 2SA532 2SA532 complementary 2sa708 2N6428 2N6715
Contextual Info: Medium Power Amplifiers and Switches TYPE POLA­ NO. RITY CASE Pd IC mW (A) VCE(sat) HFE MAXIMUM RATINGS IC VCEO VCE (V) min max (mA) (V) . fT Cob COMPLE­ min max MENTARY (V) (A) (MHz) (PF> TYPE max 2N6428 2N6714 2N6715 2N6716 2N6726 N N N N P TO-92A TO-237

Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer TO-237 Plastic Package 2N6726 PNP SILICON PLANAR EPITAXIAL TRANSISTORS This Device was Designed for General Purpose Medium Power Amplifier.

ztx614

Abstract: 2n6718 2N6714 2N6715 2N6716 2N6717 2N6724 2N6725 2N6726 2N6727
Contextual Info: TABLE 10: 2N6700 SERIES MEDIUM POWER TRANSISTORS Max. Cont. Max. PNP NPN 2N6714 2N6715 2N6724 2N6725 2N6716 2N6717 2N 6731 2N6718 V cbo 2N6726 2N6727 — — 2N6728 2N6729 2N6732 2N6730 •c V CEO Max. V CEIsat at •c m 'c mA V V A A V 40 50 50 60 60 80

transistors bipolar

Contextual Info: 2N6726 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Diode Array, Integrated Circuits and Semiconductors — P. Page 2 of 4 You are Here: Home Home Information 2N6726 Availability Online Store Diodes Transistors Integrated Circuits Optoelectronics

CENW64

Abstract: 2n6722
Contextual Info: Power Transistors TO-237 Case O z TYPE ic PD BVCBO ic hFE BVCEO V CE SAT ® IC ft *BVggg (A) (W) MAX (V) (V) (mA) (V) (mA) MAX (MHz) NPN PNP MIN MIN MIN MAX 2N6714 2N6726 2.0 2.0 40 30 50 250 1,000 0.5 1,000 MIN 50 2N6715 2N6727 2.0 2.0 50 40 50 250 1,000

2N6726

Abstract: 2n6727 2n6715
Contextual Info: 2N6714 2N6715 2N6726 2N6727 NPN PNP COMPLEMENTARY SILICON POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6714, 2N6726 series types are complementary silicon plastic power transistors designed for general purpose power

NSDU57

Abstract: 0410 NSDU51 2N4030 2N4031 2N4032 2N4033 2N4036 2N4037 2N4314
Contextual Info: NATL SEMICOND {DISCRETE} 6 5 0 1130 NATL BÛ SEMICOND, D E | b S 0 1 1 3 0 DOBSHSM 1 | 28C D I S C R E TE? T ~ Test Conditions l l " CL N <£> r» <0 CO CO ' r<0 r* «5 CO co r­ ID Ed P<0 r- r>. <0 tf> r-» ID 35454 z y (O D " 0 - 0 / o r- z " 0 s' 3 0

T1P42C

Contextual Info: TO-220 PIN CONFIGURATION 1. BASE 2 . COLLECTOR 3. EMITTER 4. COLLECTOR c DIM E ,01 0 -I A B C D E F G H J K L M N 3 G MIN MAX 14,42 9,63 3,56 16.51 10,67 4,83 0,90 1,40 3,88 2,79 3,43 0,56 14,73 6,35 2,92 - 1,15 3,75 2,29 2,54 12,70 - 2,03 - 7 31,24 DEG TO-220 Power Package Transistors NPN

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157