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    2N671 Search Results

    2N671 Datasheets (194)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    2N671
    Motorola Motorola Semiconductor Datasheet Library Scan PDF 79.98KB 1
    2N671
    Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF 36.06KB 1
    2N671
    Unknown Shortform Transistor Datasheet Guide Short Form PDF 93.04KB 1
    2N671
    Unknown Vintage Transistor Datasheets Scan PDF 53.7KB 1
    2N671
    Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF 92.2KB 1
    2N671
    Unknown Transistor Shortform Datasheet & Cross References Scan PDF 83.31KB 1
    2N671
    Unknown Shortform Transistor PDF Datasheet Short Form PDF 96.96KB 1
    2N6710
    Continental Device India PNP SILICON PLANAR EPITAXIAL TRANSISTOR Original PDF 131.92KB 3
    2N6710
    Continental Device India TO-237 Plastic Package Transistors Scan PDF 956.66KB 9
    2N6710
    Continental Device India Semiconductor Device Data Book 1996 Scan PDF 101.2KB 1
    2N6710
    Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF 36.06KB 1
    2N6710
    Unknown Semiconductor Master Cross Reference Guide Scan PDF 121.55KB 1
    2N6710
    Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF 37.99KB 1
    2N6710
    Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF 116.76KB 1
    2N6710
    Unknown Transistor Shortform Datasheet & Cross References Scan PDF 74.68KB 1
    2N6710
    Unknown Shortform Transistor PDF Datasheet Short Form PDF 168.94KB 1
    2N6710
    National Semiconductor Medium Power Transistors Scan PDF 258.26KB 10
    2N6710
    National Semiconductor PNP Transistors Scan PDF 230.18KB 6
    2N6710
    National Semiconductor Medium Power Transistors Scan PDF 31.83KB 1
    2N6710
    National Semiconductor Medium Power Transistors Scan PDF 258.46KB 10
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    2N671 Price and Stock

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    Central Semiconductor Corp 2N6716

    - Boxed Product (Development Kits) (Alt: 2N6716)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas 2N6716 Box 2,000
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    Central Semiconductor Corp 2N6717

    - Boxed Product (Development Kits) (Alt: 2N6717)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas 2N6717 Box 2,000
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    Central Semiconductor Corp 2N6714

    - Boxed Product (Development Kits) (Alt: 2N6714)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas 2N6714 Box 2,000
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    Ferranti Electric Inc 2N6717

    Trans GP BJT NPN 80V 1A 3-Pin TO-92
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com 2N6717 945
    • 1 $10.83
    • 10 $7.54
    • 100 $3.03
    • 1000 $2.97
    • 10000 $2.97
    Buy Now

    Ferranti Electric Inc 2N6716

    Trans GP BJT NPN 60V 1A 3-Pin E-Line
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com 2N6716 796
    • 1 $4.24
    • 10 $4.24
    • 100 $1.86
    • 1000 $0.88
    • 10000 $0.88
    Buy Now

    2N671 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer 2N6714 2N6715 2N6716 TO-237 Plastic Package NPN SILICON PLANAR EPITAXIAL TRANSISTORS Designed for General purpose Medium Power Amplifier and Switching Circuits.


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    2n67142n67152n6716o-237+1c-120 PDF

    Contextual Info: Continental Device India Limited IS/ISO 9002 Lic# QSC/L-000019.3 An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR TRANSISTOR 2N6719 TO-237 Plastic Package Designed for Applilcation as a Video Output to Drive Color CRT ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise


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    qsc/l-0000192n6719o-237c-120+1rev110302d PDF

    2N6715

    Abstract: MPS6715 HOTS
    Contextual Info: 2N6715/PN6715/MPS6715 NATL S E M I CO ND n r Sç Cr Rh Ef T tE f DI 11E » | • bSG113D 0 2 * 5- | I . 0 3 7 2 ^QC- C Tl National Semiconductor 2N6715 t PN6715 MPS6715 J^ ^*'237 El^ "92 Bc Bc TL/G/10100-S 'OS ebc TUG/10100-1 TUG/10100-4 NPN General Purpose Amplifier


    OCR Scan
    hsg113d2n6715o-237mps6715+6t0-22metl/g/10100-8tug/10100-1tl/g/10100-410madchots PDF

    2N6718

    Abstract: 2n6717 2N6716 NPN Transistor 1A 100V 2n6718 equivalent npn transistor 100v min NPN Transistor VCEO 80V 100V hfe 100 100v 1a transistor VCE 100V transistor transistor 2n6718
    Contextual Info: 2N6716 / 2N6717 / 2N6718 1A , 100V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES   TO-92 High Voltage:VCEO = 100V Gain of 20 @ IC = 0.5A G H Emitter


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    2n67162n67172n6718250ma+7npn transistor 1a 100v2n6718 equivalentnpn transistor 100v minnpn transistor vceo 80v 100v hfe 100100v 1a transistorvce 100v transistortransistor 2n6718 PDF

    IT 237

    Abstract: 2N6710
    Contextual Info: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company PNP SILICON PLANAR EPITAXIAL TRANSISTOR 2N6710 TO-237 Plastic Package General Purpose Medium Power Amplifier ABSOLUTE MAXIMUM RATINGS Ta=25ºC DESCRIPTION SYMBOL VCBO Collector Base Voltage


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    iso/ts169492n6710o-237c-120+1it 237 PDF

    2N6717

    Abstract: 2N6728 2N6716 92GU05 92GU06 T060
    Contextual Info: 92GU05,06 2N6716.17 NPN POWER TRANSISTORS 60-80 VOLTS 2 AMPS, 1.2 WATTS COMPLEMENTARY TO THE 2N6728, 29/92GU55, 56 SERIES Applications: • High Vc e ratings: 92GU05 = 60V min. VCEO 92GU06 = 80V min. VcEO EMITTER • Exceptional power-to-price ratio C A S E S TY LE TO-237


    OCR Scan
    2n672829/92gu5592gu0592gu06+592gu05/2n671692gu06a/2n67172n67162n6717t060 PDF

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N6718 NPN SILICON TRANSISTOR NPN GENERAL PLANAR TRANSISTOR  DESCRIPTION The UTC 2N6718 is designed for general purpose medium power amplifier and switching applications.  FEATURES * High Power: 850mW * High Current: 1A


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    2n6718850mw2n6718l-x-ab3-r2n6718g-x-ab3-r+52n6718l-x-t6c-k2n6718g-x-t6c-k2n6718l-x-t92-b2n6718g-x-t92-b2n6718l-x-t92-k PDF

    2N6730

    Abstract: 2N6719 2N6714 2N6715 2N6716 2N6717 2N6718 2N6726 2N6727 2N6728
    Contextual Info: Power Transistors TO-237 Case Ò Z TYPE ic PD A (W) BVCBO BVCEO @ h FE Ic VCE(SAT) @ IC fT *b v c e s NPN PNP MAX (V) (V) MIN MIN MIN (mA) MAX (V) (mA) MAX (MHz) MIN 2N6714 2N6726 2.0 2.0 40 30 50 250 1,000 0.5 1,000 50 2N6715 2N6727 2.0 2.0 50 40 50 250


    OCR Scan
    o-2372n67142n67262n6715+82n67272n67162n67282n67172n67292n67182n67302n6719 PDF

    2N6715

    Contextual Info: 2N6715 SILICON NPN TRANSISTOR PACKAGE STYLE TO-237 DESCRIPTION: The 2N6715 is Designed for General Purpose Amplifier, and Switching Applications. MAXIMUM RATINGS IC 2.0 A VCE 40 V PDISS 2.0 W @ TC = 25 OC 0.85 W @ TA = 25 OC TJ -55 OC to +150 OC TSTG -55 OC to +150 OC


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    2n6715o-237 PDF

    CENW64

    Abstract: 2N6714 2N6730 2N6715 2N6716 2N6717 2N6718 2N6719 2N6726 2N6727
    Contextual Info: Pow er T ran sistors TO-237 Case Z Ò TYPE ic PD A (W) BVCBO BVCEO @ h FE Ic i VCE(SAT) @ IC fT *b v c e s NPN PNP MAX (V) (V) MIN MIN MIN (V) (mA) MAX (mA) MAX (MHz) MIN 2N6714 2N6726 2.0 2.0 40 30 50 250 1,000 0.5 1,000 50 2N6715 2N6727 2.0 2.0 50 40 50


    OCR Scan
    o-2372n67142n67262n6715+92n67272n67162n67282n67172n67292n6718cenw642n67302n6719 PDF

    2N6715

    Contextual Info: 2N6714 2N6715 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 1 - MARCH FE A T U R E S * * * 40 Volt V CE0 Gain of 50 at lc= 1 Am p P,0,= 1W att E-Line T092 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER


    OCR Scan
    2n67142n6715100ma PDF

    2n6719

    Contextual Info: . . w . . bflF- High VoltageAmplifiers Device V CE0 sust (Volts) Min 300 k bSQ113D 003^532 hfiT « N S C 5 NATL SEHIC0ND (DISCRETE ) lc (mA) V CE(sal) lc 4 U (Volts) Min fT Max Mia (mA) 2N6719 500 40 30 MMBTA42 500 40 30 0.5 20 500 40 30 0.5 20 500


    OCR Scan
    2n6719mmbta42mpsa42mmbta92+6mpsa92bsq113d2n5401mmbt54012n5400mpsl51 PDF

    nsdu57

    Abstract: TO-237 2N6556 2N5415
    Contextual Info: NATL SEMICÔND DISCRETE ESE D • bSG113Q 0D377flfi 7 ■ T-2 7-01 PNP Medium Power Transistors by Ascending Vceo (Continued) H fe @ Ic/V ce Vce (sat) (V) Max Part No. Vceo (V) Min Max (mA/V) 2N4236 2N6710 2N6729 2N6732 92PE77C 92PU56 D41E7 D43C10 D43C11


    OCR Scan
    bsg113q0d377flfi2n42362n6710+102n67292n673292pe77c92pu56d41e7d43c10nsdu57to-2372n65562n5415 PDF

    2N6715

    Abstract: 2N6714 2N6716
    Contextual Info: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company 2N6714 2N6715 2N6716 TO-237 Plastic Package NPN SILICON PLANAR EPITAXIAL TRANSISTORS Designed for General purpose Medium Power Amplifier and Switching Circuits. E 1 = EMITTER 2 = BASE


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    iso/ts169492n67142n67152n6716+2o-237c-120 PDF

    2N6718

    Abstract: IC350 2N6718L
    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD. 2N6718 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR DESCRIPTION The UTC 2N6718 is designed for general purpose medium power amplifier and switching applications. FEATURES 1 *High Power: 850mW *High Current: 1A


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    2n6718850mwo-126c2n6718l+42n6718-t6c-a-k2n6718l-t6c-a-kqw-r217-007ic350 PDF

    2N6718

    Contextual Info: UTC 2N6718 NPN EPITAXIAL SILICON TRANSISTOR NPN GENERAL PLANAR TRANSISTOR DESCRIPTION The UTC 2N6718 is designed for general purpose medium power amplifier and switching applications. FEATURES *High Power: 850mW *High Current: 1A 1 TO-92 1:EMITTER 2: COLLECTOR


    Original
    2n6718850mwqw-r201-056 PDF

    Contextual Info: 2N6715 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)50 I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)2.0 Maximum Operating Temp (øC)150þ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)50 V(CE)sat Max. (V).50 @I(C) (A) (Test Condition)1.0


    Original
    2n6715freq50m PDF

    Contextual Info: 2N6713 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)300 V(BR)CBO (V)300 I(C) Max. (A)100m Absolute Max. Power Diss. (W)2.0 Maximum Operating Temp (øC)150þ I(CBO) Max. (A)50n @V(CBO) (V) (Test Condition)300 V(CE)sat Max. (V)1.0 @I(C) (A) (Test Condition)30m


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    2n6713freq40m PDF

    Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 2N6718 TRANSISTOR NPN 1. EMITTER FEATURES z General Purpose Switching Application 2. BASE 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol


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    2n6718250ma500ma PDF

    2N6714

    Abstract: 2N6715
    Contextual Info: NPN SILICON PLANAR MEDIUM POWER TRANSISTORS 2N6714 2N6715 ISSUE 1 – MARCH 94 FEATURES * 40 Volt VCEO * Gain of 50 at IC= 1 Amp * Ptot= 1 Watt C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage VCBO 2N6714 2N6715


    Original
    2n67142n6715100ma PDF

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N6718 NPN SILICON TRANSISTOR NPN GENERAL PLANAR TRANSISTOR  DESCRIPTION The UTC 2N6718 is designed for general purpose medium power amplifier and switching applications.  FEATURES * High Power: 850mW * High Current: 1A


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    2n6718850mw2n6718g-x-ab3-rot-89+52n6718l-x-t6c-k2n6718g-x-t6c-ko-126c2n6718l-x-t92-b2n6718g-x-t92-b PDF

    2sc498

    Abstract: 2SC875 2SA503 2sc1175 FT501 2N6428 2SA532 2SA606 2sa708 2N6714
    Contextual Info: Medium Power Amplifiers and Switches TYPE NO. RITY HFE MAXIMUM RATINGS POLA­ CASE Pd IC VCEO mW (A) (V) min VCE(sat) fT Cob COMPLE­ min max MENTARY IC VCE max max (mA) (V) (V) (A) (MHz) (PF> TYPE . 2N6428 2N6714 2N6715 2N6716 2N6726 N N N N P TO-92A TO-237


    OCR Scan
    2n6428o-92a2n6714o-237+122n67262n67152n67272n67162sc4982sc8752sa5032sc1175ft5012sa5322sa6062sa708 PDF

    2N6730

    Abstract: 2N6728 SE194 2N6716 7292n 2n 6718 2N6718 SE-194
    Contextual Info: Silicon Planar Medium Power Transistors NPN 2N6716 2N6717 2N6718 PNP 2N6728 2N6729 2N6730 FEATURES • High V CE ratin g s up to 1 00 vo lts • Exceptional p o w e r dissip atio n cap a bility - 2 W @ T c a s e = 2 5 °C - 1W @ T amb = 2 5 °C • h FE specified up to 5 0 0 m A


    OCR Scan
    2n67162n67172n67182n6728+62n67292n6730se1947292n2n 6718se-194 PDF

    2N6726

    Abstract: 2N6714 2N6727 SE192 TRANSITON
    Contextual Info: Silicon Planar Medium Power Transistors 2N6715 2N6727 NPN 2N6714 PNP 2N6726 FEATU RES • Exceptional p ow er dissipation capability -2 W @ T case = 25°C - 1 W @ T amb = 2 5 ° C • h FE specified up to 1A • L o w saturation volatages D E S C R IP T IO N


    OCR Scan
    2n67142n67262n67152n6727+2se192transiton PDF