MPSL51 Search Results

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors MPSL51 TRANSISTOR PNP TO – 92 1.EMITTER FEATURES z General Purpose Amplifier 2.BASE 3.COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Value Unit

MPSL51

Abstract: 1N914 MPS-L51
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA A m plifier Transistor MPSL51 PNP Silicon COLLECTOR 3 1 EMITTER MAXIMUM RATINGS Symbol Value Unit Collector-Emitter Voltage VCEO -100 Vdc Collector-Base Voltage VCBO -100 Vdc Emitter-Base Voltage vebo ^ .0 Vdc Rating ic

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistor PNP Silicon MPSL51 COLLECTOR 3 1 EMITTER M AXIMUM RATINGS Rating Symbol Value VCEO -100 Vdc Collector-Base Voltage VCBO -100 Vdc Emitter-Base Voltage Collector-Emltter Voltage Unit v EBO -4.0 Vdc Collector Current — Continuous

Contextual Info: D iscrete POWER & S ig n a l Technologies F = A IR C H IL .O SEMICONDUCTOR MPSL51 PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring high voltages. Sourced from Process 74. See 2N5401 for characteristics.

BC327 SOT 23

Abstract: PZT2222AT1 BC639 sot
Contextual Info: Bipolar Transistors High Current Transistors w 500 mA V(BR)CEO IC mA Max Min Max MPSL51 100 600 40 250 BC489 BC490 80 1000 60 400 BC639 BC489A BC489B BC639−16 BC447 MPS8099 MPSA06 − MPS651 BC637 BC487 BC487B MPSA05 − BC640 BC490A BC490B BC640−16

2N5401

Abstract: MPSL51
Contextual Info: SEMiCONDUCTQR MPSL51 PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring high voltages. Sourced from Process 74. See 2N5401 for characteristics. Absolute Màximum RStinQS TA = 2 5 ° C unless o th e rw ise noted

MPS-L51

Abstract: MPSL51 2N5401
Contextual Info: MPSL51 C TO-92 BE PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring high voltages. Sourced from Process 74. See 2N5401 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

MPSL51

Contextual Info: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company PNP SILICON PLANAR EPITAXIAL TRANSISTOR E MPSL51 TO-92 CBE BC Amplifier Transistor. ABSOLUTE MAXIMUM RATINGS. DESCRIPTION SYMBOL VALUE VCBO 100 Collector -Base Voltage VCEO 100

Contextual Info: MPSL51 Amplifier Transistor PNP Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO −100 Vdc Collector −Base Voltage VCBO −100 Vdc Emitter −Base Voltage VEBO −4.0 Vdc Collector Current — Continuous IC −600 mAdc

BC237

Abstract: 08 6210 036 010
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistor MPSL51 PNP Silicon COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 CASE 29–04, STYLE 1 TO–92 TO–226AA MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO –100 Vdc Collector – Base Voltage

MPSL51

Abstract: motorola 1N914 diode datasheet 1N914
Contextual Info: MOTOROLA Order this document by MPSL51/D SEMICONDUCTOR TECHNICAL DATA Amplifier Transistor MPSL51 PNP Silicon COLLECTOR 3 2 BASE 1 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Collector – Emitter Voltage VCEO –100 Vdc Collector – Base Voltage

MPSL51

Contextual Info: ON Semiconductort Amplifier Transistor MPSL51 PNP Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO –100 Vdc Collector–Base Voltage VCBO –100 Vdc Emitter–Base Voltage VEBO –4.0 Vdc Collector Current — Continuous

transistor equivalent of 2N5401

Contextual Info: S A MS UN G SE MICONDU CTOR INC MPSL51 ! 1 4E D | 7*^4142 00073^2 1 | PNP EPITAXIAL SILICON TRANSISTOR “ ‘ " T-29-21 AMPLIFIER TRANSISTOR • Collector-Em ltter Voltage: Vceo=100V • C ollector D issipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta =25°C)

Contextual Info: IS / IECQC 700000 IS / IECQC 750100 IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer PNP SILICON PLANAR EPITAXIAL TRANSISTOR MPSL51 TO-92 CBE Amplifier Transistor. ABSOLUTE MAXIMUM RATINGS. DESCRIPTION

2N5401

Abstract: CBVK741B019 F63TNR MPSL51 PN2222N
Contextual Info: MPSL51 C TO-92 BE PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring high voltages. Sourced from Process 74. See 2N5401 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

MPSL51

Abstract: P2N2907 PN2906 PN2906A PN2907 PN3638 PN3638A PN3644 PN3645
Contextual Info: TO-92 Plastic Package Transistors PNP Electrical Characteristics (Ta=25‘C, Unless Otherwise Specified) Maximum Ratings Type No. MPSA93 MPSL51 P2N2907 P2N2907A PN2906 PN2906A PN2907 PN29Q7A PN3638 PN3638A 200 ^CEO ^EBO (V) Min (V) Min 200 'c (W) (A) @Tc=25°c

MPSL5

Contextual Info: S E M IC O N D U C T O R MPSL51 PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and sw itches requiring high voltages. Sourced from Process 74. See 2N5401 for characteristics. AbSOlUtG Maximum RâtinÇjS Symbol

Contextual Info: ON Semiconductort Amplifier Transistor MPSL51 PNP Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO –100 Vdc Collector–Base Voltage VCBO –100 Vdc Emitter–Base Voltage VEBO –4.0 Vdc Collector Current — Continuous

Contextual Info: ON Semiconductort Amplifier Transistor MPSL51 PNP Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO −100 Vdc Collector −Base Voltage VCBO −100 Vdc Emitter −Base Voltage VEBO −4.0 Vdc Collector Current — Continuous

MPSL51

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR EPITAXIAL TRANSISTOR E MPSL51 TO-92 CBE BC Amplifier Transistor. ABSOLUTE MAXIMUM RATINGS. DESCRIPTION SYMBOL VALUE VCBO 100 Collector -Base Voltage

2N4355

Abstract: 2N5139 2N3644 2N4121 TN2904A NS4234 TIS91 2N3638A 50113g 2N4354 T-12
Contextual Info: NATL S E M IC O N D { D I S C R E T E ! ifi DE | This Material Copyrighted By Its Respective Manufacturer b S 0 1 1 3 0 0 0 3 S M M 3 7 f ” NATL S E M IC O N D NATL SEMICOND, s Tut Conditions CO CD 8 o £ 2 Q. CM CO CO o o O O o o 2fl D F | t S D 1 1 3 D

BFW45

Abstract: BFR59 BFS89 BFS90 BFS91 BFT47 BFT48 BFT49 BFT57 BFT58
Contextual Info: High Voltage Transistors TYPE NO. 101 POLA­ RITY CASE MAXIMUM RATINGS VCEO IC Pd ICM* VCER* mA (mW) (V) VCE(sat) HFE min max IC (mA) VCE (V) m ai (V) IC (mA) fr min (MHz) Cob Cre* max (MHz) BFR59 BFS89 BFS90 BFS91 BFT47 N N P P N TO-39 TO-39 TO-39 TO-39

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

SE4020

Abstract: fairchild to-106 se7055 BFX37 BFY57 BC532 2N2484 PN4889 2N3965 EN2484
Contextual Info: FAIRCHILD TRANSISTORS S M A L L S IG N A L LOW LEVEL, LOW NOISE AMPLIFIER TRANSISTORS BY ASCENDING VCEO (Cont’d) Item DEVK: e n o . Pol arity NPN PNP 1 ^FE @ ic VCEO V Min Min/Max 60 100/300 PN4249 2 2N3965 60 3 BFX37 60 2N3962 f»FE mA 180/- mA Min/Max