2N3962 Search Results

SE4020

Abstract: fairchild to-106 se7055 BFX37 BFY57 BC532 2N2484 PN4889 2N3965 EN2484
Contextual Info: FAIRCHILD TRANSISTORS S M A L L S IG N A L LOW LEVEL, LOW NOISE AMPLIFIER TRANSISTORS BY ASCENDING VCEO (Cont’d) Item DEVK: e n o . Pol arity NPN PNP 1 ^FE @ ic VCEO V Min Min/Max 60 100/300 PN4249 2 2N3965 60 3 BFX37 60 2N3962 f»FE mA 180/- mA Min/Max

Fairchild, 2N3019

Abstract: 2N3906 NPN Fairchild DN2222A transistor 2N2359A fairchild 2n3019 2n2222a fairchild DN3904 2N2907 NPN Transistor 2n3904 npn fairchild 2N3904 NPN Transistor
Contextual Info: FAIRCHILD TRANSISTORS SMALL SIGNAL NPN AND PNP TRANSISTOR DICE BY APPLICATION Item DEVICE NO. Basic VcEO 'CBO @ VcB hFE @ ic V V Standard nA mA Pol. Device Min Max Min/Max 1 DN2484 NPN 2N2484 60 20 45 250/100/450 2 DN3962 PNP 2N3962 60 20 50 3 DN918 NPN

2N3907

Contextual Info: 4ÖE D • A1331Ö7 GÜD0437 SEMELABr TbS H S n L B SEflELAB LTD 7^ 27. BI POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY Type Number Rel Code 2N3879 2N3907 2N3919 2N3962 2N3963 2N3964 2N3965 2N3996 2N3997 2N3998 2N3999 2N4000 2N4001 2N4026 2N4027 2N4028

Contextual Info: ., One. <£emL-£on Luatoi 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 TELEPHONE: (973 376-2922 (212)227-6006 FAX: (973) 376-8960 2N3962 U.SA PNP SILICON TRANSISTOR DESCRIPTION 2N3962 is PNP silicon planar transistor designed for AF small signal amplifier stages.

Contextual Info: CRO 2N3962 PNP SILICON TRANSISTOR TO-18 DESCRIPTION 2N3962 is PNP silicon planar transistor designed for AF small signal amplifier stages. CBE ABSOLUTE MAXIM UM RATINGS Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current

Contextual Info: 2N3962 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar PNP Device. VCEO = 60V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.2A All Semelab hermetically sealed products

TO-18 amps pnp transistor

Abstract: BC107 BC108
Contextual Info: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL PNP TRANSISTOR TO-18 PACKAGE DEVICE TYPE V ceo sus VOLTS (max) AMPS TO-18 T0206AA 2N2906 2N2906AA 2N2907 2N2907AA 2N3250AA 2N3251AA 2N3496 2N3497 2N3798 2N3799 2N3962 2N3963 2N3964 2N3965 2N4026 2N4027 2N4028 2N4029

2N3962

Contextual Info: 2N3962 PNP SILICON TRANSISTOR DESCRIPTION 2N3962 is PNP silicon planar transistor designed for AF small signal amplifier stages. CBE VCEO VCBO VEBO IC Pd Tj,Tstg * Pulse test : pulse width <300/¿S, duty cycle < 2 % . MICRO IIIB L < y CONDITIONS IC=5mA IB=0

2N3962CSM

Contextual Info: 2N3962CSM Dimensions in mm inches . 2.54 ± 0.13 (0.10 ± 0.005) 0.51 ± 0.10 (0.02 ± 0.004) Bipolar PNP Device in a Hermetically sealed LCC1 Ceramic Surface Mount Package for High Reliability Applications 0.31 rad. (0.012) 2 0.76 ± 0.15 (0.03 ± 0.006)

2N3962

Contextual Info: 2N3962 CRO PNP SILICON TRANSISTOR TO-18 DESCRIPTION 2N3962 is PNP silicon planar transistor designed for AF small signal amplifier stages. CBE ABSOLUTE MAXIM UM RATINGS Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current

2N3962

Abstract: 2N3965 2N3964 2N3963 2N3962 MOTOROLA
Contextual Info: M O T O RO L A SC XSTRS/R F 1SE 0 I fc>3li7254 G0öb3öb 2N3962 - thru 2N3965 CASE 22-03, STYLE 1 TO-18 TO-206AA M A X IM U M R A T IN G S Sym bol 2N3962 2N396S 2N3964 2N3963 ColJector-Em itter V oltag e V C EO 60 45 80 V Collector-B ase V oltag e VCBO 60

Contextual Info: TYPES 2N3962 THRU 2N3965 P-N-P SILICON TRANSISTORS B U L L E T IN N O . D L -S 6 7 9 5 6 3 . F E B R U A R Y 1967 FOR LOW-LEVEL, LOW-NOISE, HIGH-GAIN, SMALL-SIGNAL AMPLIFIER APPLICATIONS • Guaranteed H fe at 10 /¿A, T a = — 55°C and 25°C • Guaranteed Low-Noise Characteristics at 20 /xA

Contextual Info: General Transistor Corporation SMALL SIG N A L TRANSISTORS PNP TRANSISTORS FOR LOW LEVEL, LOW NOISE APPLICATIONS Plot Type No. mW hF E&C VCEO M VCE( SAT) MUMIAX (mA) (MHz) ts IOFF <n»> fr (V) MAX (mA) 2N3962 360 60 100/300 0.01 0.25 10/0.5 40 3 2N3963 2N3964

Contextual Info: 2N3962CSM Dimensions in mm inches . 2.54 ± 0.13 (0.10 ± 0.005) 0.51 ± 0.10 (0.02 ± 0.004) Bipolar PNP Device in a Hermetically sealed LCC1 Ceramic Surface Mount Package for High Reliability Applications 0.31 rad. (0.012) 2 0.76 ± 0.15 (0.03 ± 0.006)

2N6369

Abstract: 2N2483 2N2484 2N2894 2N3209 2N3962 2N3963 2N3964 2N3965 2N708
Contextual Info: General Transistor Corporation SMALL SIG N A L TRANSISTORS PNP TRANSISTORS FOR LOW LEVEL, LOW NOISE APPLICATIONS Type No. 2N3962 2N3963 2N3964 2N3965 hF EfiXC Plot VCEO mW M MNMAX (»>*) (V) MAX (">*) 60 80 45 60 100/300 100/300 250/500 250/500 0.01 0.01

SE4020

Abstract: fairchild to-106 EN2484 BC532 BCS20B high voltage npn to-92 BC530 BC520 2N3962 2N3965
Contextual Info: FAIRCHILD TRANSISTORS SMALL SIGNAL LOW LEVEL, LOW NOISE AMPLIFIER TRANSISTORS BY ASCENDING VCEO (Cont’d) Item DEVK: e n o . Pol arity NPN PNP 1 Min/Max 60 100/300 PN4249 2 2N3965 60 3 BFX37 60 2N3962 4 ^FE VCEO V Min f»FE @ ic mA 180/- mA Min/Max 0.10

2N3962

Contextual Info: 2N3962 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar PNP Device. VCEO = 60V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.2A All Semelab hermetically sealed products

Contextual Info: 2N3962 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar PNP Device. VCEO = 60V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.2A All Semelab hermetically sealed products

2N3964

Abstract: 2N3963 2N3965 3964-2N 2N3962 3963-2N
Contextual Info: 3GE D • 7^237 DÜ311TS S ■ _ f Z 7 SCS-THOM SON ^T # ¡ ^ V l > \ ~ \ ù[ 2N3962/2N3963 2N3964/2N3965 S G S-THOMSON LOW NOISE, LOW LEVEL AMPLIFIERS DESCRIPTION The 2N3962, 2N3963, 2N3964 and 2N3965 are si­ licon planar epitaxial PNP transistors in Jedec

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

bc856 to 92

Abstract: bc846 to 92 2N2907A TO-92 2N3859A PN3568 Marking 43B NSDU05 8C556 2N3859A NATIONAL SEMICONDUCTOR T0-237
Contextual Info: ]> • £>501130 0 0 3 T 5 1 b General Purpose Amplifiers and Switches continued; Devices (Volts Min PNP NPN 65 (mA) Max Min Max 450 BC546 100 110 BC846 100 110 2N4036 60 hFE@ lc k V CE0(m b 1) fT @»c mA (MHz) Min mA NF (dB) Max (mW) @25°C 2.0 300 Typ

Contextual Info: Small Signal Transistors TO-18 Case Continued TYPE NO. DESCRIPTION (V) (V) (V) (l*A) MIN MIN MIN MAX *ICES "IC E V @ lc hFE BVCBO BVCEO b v e b o ICBO @ VCBO (mA) (V) MIN e VCE VCE(SAT) @ 1C Cob (V) MAX (V) (mA) MAX (pF) fT NF ton (MHZ) (dB) (ns) MAX MIN

BC177 NPN transistor

Abstract: BC178 TRANSISTOR bc108 bc325 bf179 BF177 transistor NPN BC178 applications of Transistor BC108 BC326 BFQ35
Contextual Info: Metal Can Metal Can Product Variations Low Level General Purpose Am plifiers TO-5, TO-39 and TO-18 can be supplied with several variations from standard. Device Type Lead Length The standard lead length is 12,7mm 0,5in . Certain types are available with longer leads— 38,1mm (1,5in) at a small extra

C495 transistor

Abstract: C735 transistor c638 transistor C756 TRANSISTOR transistor c495 C644 transistor PNP Transistor 2N2222 equivalent transistor c735 c637 transistor transistor c633
Contextual Info: Metal Can Metal Can Product Variations Low Level General Purpose Am plifiers TO-5, TO-39 and TO-18 can be supplied with several variations from standard. Device Type Lead Length The standard lead length is 12,7mm 0,5in . Certain types are available with longer leads— 38,1mm (1,5in) at a sm all extra