A1331 Search Results

04NG

Abstract: DIODE T25 IRFY230 LE17 mosfet 100a 200v
Contextual Info: bOE J> m A1331Û7 GDDOSS4 T2S ISMLB " T 3 ° l- U SENELAB PLC 5EMELAB IRFY230 MECHANICAL DATA Dimensions in mm HERMETICALLY SEALED N-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS l.F FEATURES • HERMETIC T0220 METAL OR CERAMIC SURFACE MOUNT PACKAGES • SCREENING OPTIONS AVAILABLE

2N3907

Contextual Info: 4ÖE D • A1331Ö7 GÜD0437 SEMELABr TbS H S n L B SEflELAB LTD 7^ 27. BI POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY Type Number Rel Code 2N3879 2N3907 2N3919 2N3962 2N3963 2N3964 2N3965 2N3996 2N3997 2N3998 2N3999 2N4000 2N4001 2N4026 2N4027 2N4028

Contextual Info: bOE » S P S e a g a te • A1331fl7 0001143 403 ISMLB r-S~8- H3> Microelectronics Limited 1.5 AMP, 3-TERMINAL NEGATIVE REGULATORS IP120A, ÏP12Q, LM120, IP7900A Series, IP7900 Series SEMELAB PLC DESCRIPTION FEATURES The IP120A /IP7900A/IP7900 series of threeterm inal regulators is available with several

Contextual Info: bOE D • A1331Ô7 ODGDSQfl QMS ■ SMLB SEMELAB PLC SEMELAB 'T S V lS BU L48B ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE, HIGH SPEED NPN SILICON POWER TRANSISTOR M E C H A N IC A L D A TA D im ension s in m m • SEMEFAB DESIGNED A N D DIFFUSED • HIGH VOLTAGE VCE>0= 800V

k 117

Abstract: k117 BAX65 BCW35 BCY30A BCY31A BCY32A BCY33A T0532 BCY39A
Contextual Info: SENELAB LTD 37E J> m A1331A7 OOODOTfl I SMLB S E M E L A B MANUFACTURING Polarity Package VCEO •c cont Diode Array NPN PNP PNP PNP T077 40 0.3 T018 T018 T 05 T 05 45 45 64 64 0.6 0.6 0.1 0.1 PNP PNP PNP PNP PNP T 05 T 05 T05 T 05 T 05 64 32 32 64 32 0.1

BUW52

Abstract: LE17
Contextual Info: 37E D S E M E L A B LTD A1331A7 DOODlIt SEMELAB BUW 52 NPN MULTI-EPITAXIAL POWER TRANSISTOR Suitable for high current, high speed, low voltage applications M EC H A N IC A L DATA Dimensions in mm FEATURES . l o w v ce sat • FAST SWITCHING • HIGH CURRENT

BUW91

Abstract: 0DG02 LE17
Contextual Info: SENELAB LTD 3 7E J UL 0 6 1988 A1331A7 D 5EMELAB BUW 91 NPN MULTI-EPITAXIAL POWER TRANSISTOR Suitable for designs requiring devices with very low saturation voltage and high gain for reduced load operation M EC H A N IC A L DATA Dim ensionsin mm FEATURES • LOW VCE SAT

Contextual Info: SEMELAB LTD A133167 Q00Q02S 1 agMwpEjr 1» nitii "type No. 2N5480 2N5490 2N5491 2N5492 2N5493 2N5494 2N5495 2N5496 2N54 97 2N5498 Reliability Option HI-REL SCREEN Polarity Package VCEO •c cont n "’ 1^iHwwg " j.v'ri;m ifiiirttt hFE@ VCE/*C »T Pd 7 7 7

2N372A

Abstract: 2N3680 2N3809 T072 2N2979DCSM 2N3734 BFX81 T052 2N3501 2N3506
Contextual Info: SEMELAB[ MflE D • A1331B7 DDDDMBb 02 ^ ■ SMLB SEMELAB LTDT»3.7«0l HI-REL BI-POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY Type Number Rei Code 2N3501 2N3506 2N3507 2N3508 2N3509 2N3511 2N3571 2N3583 2N3584 2N3585 2N3634 2N3635 2N3636 2N3637 2N3665

sml752r4cn

Contextual Info: bDE D SEMELAB PLC A1331Ô7 OOGDfiEb ÛG3 MSIILB IN I = ^ = SEME m i SML802R4CN SML752R4CN SML802R8CN SML752R8CN LAB 800V 750V 800V 750V 2.4012 2.40Í2 2.8012 2.80Í2 4.5A 4.5A 4.0A 4.0A N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS

Contextual Info: Reliability Polarity Option TVpe No. A1331A7 O Q O O O m 37E D SEMELAB LTD Package v CEO <C eont hF E @ v CE/fC »T Pd 2N2817 2N2818 2N2819 2N2820 2N2821 HI-REL HI-REL HI-REL HI-REL HI-REL NPN NPN NPN NPN NPN T063 T063 T063 T063 T063 150 200 80 100 150 20

BAX65

Abstract: BCY32A BCY33A BCY34A BCY58 BCY59 BCY78 BCY79 BD106B BD107A
Contextual Info: SEMELAB LTD 37E D • A1331A7 GODDQTfi 1 J S E M E L A B MANUFACTURING E ■c Polarity Package VCEO cont Diode Array NPN PNP PNP PNP T077 40 0.3 T018 T018 T05 T05 45 45 64 64 0.6 0.6 0.1 0.1 j i r / PNP PNP PNP PNP PNP T05 T05 T05 T05 T05 64 32 32 64 32 0.1

Contextual Info: 3 7E SEMELAB LTD » • A1331A7 000DQ24 S ISMLB se&m type No. Reliability Polarity Option Package vCEO ■c cont hFE@ VCE/'C 'T PD 2N5861 2N5864 2N5865 2N5867 2N5868 SCREEN HI-REL HI-REL SCREEN SCREEN NPN PNP PNP PNP PNP T039 T039 T039 TO 3 TO 3 100 70 50

BUV18

Abstract: chip die npn transistor BUW38 G936A BUV51 G636A BUW51 G336A BUP46 BUP55
Contextual Info: MflE D A1331S7 D D D 0 4 n TMT SEMEFABF SEMELAB LTD W- \-3>5-D7 The G136 chip family is an NPN bipolar multi-epitaxial planar transistor intended for applications requiring fast switching, low saturation, high power robust devices. • UP TO 55 AMPS • UP TO 6 5 0 VOLTS VCBO

Sot-220

Abstract: 1121t B1331 BUP42 LE17 npn 10a 800v a1023 S7100
Contextual Info: 3 7E SEMELAB LTD D • B1331A7 ■ G00015S SEMELAB -1 X \ BUP 42 SILICON NPN EPITAXIAL PLANAR MECHANICAL DATA Dimensions in mm 10.3 max. 3.6 p. è L|. « I I 1.3 r 15.8 ¿.5max FEATURES 5 .9 • HIGH BREAKDOWN VOLTAGE min. • HIGH RELIABILITY max. • WIDE AREA OF SAFE OPERATION

BUP34

Abstract: LE17 900Volts
Contextual Info: SEMELAB LTD 3?E J> m 0133107 Q00Q13M SEP/ÏELAB JUÜ 'Ì 9 >937 3 /VJ3 'y ^ '\ BUP34 NEW PRODUCT SILIC O N N PN MECHANICAL DATA EPITAXIAL PLANAR 10.3. max. 1.3 3.6 2.8 ¿.5max. b-/txx ¥ 5.9 w min. FEATURES 15.8 max. • Very high breakdown voltage L}_. • Low Cob

XAPP031

Contextual Info: £ XILINX XC4000E and XC4000X Series Field Programmable Gate Arrays November 10,1997 Version 1.4 Product Specification XC4000E and XC4000X Series Features Low-Voltage Versions Available Note: XC4000 Series devices described in this data sheet include the XC4000E family and XC4000X Series.

A1331

Contextual Info: ECH8410 Ordering number : A1331A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET ECH8410 General-Purpose Switching Device Applications Features • • • • Low ON-resistance. 4V drive. Halogen free compliance. Protection diode in Specifications

Contextual Info: im ittl mi SEME IRFN150 LAB MECHANICAL DATA Dimensions in mm inches N-CHANNEL POWER MOSFET 11.5 2.0 k 3.5 ► i 1 3.5 1 3 ^D(cont) 3.0 R DS(on) ii r FEATURES i • HERMETICALLY SEALED SURFACE MOUNT PACKAGE o o> r 100V 19A 0.070Q V DSS 0.25 • SMALL FOOTPRINT - EFFICIENT USE OF

Contextual Info: im m = nil SEME IRFN250 LAB MECHANICAL DATA Dimensions in mm inches N-CHANNEL POWER MOSFET 11.5 2.0 3.5 3.5 200V V Dss 0.25 14A 0.1 OOO ^D(cont) 3.0 ^DS(on) i5 FEATURES • HERMETICALLY SEALED SURFACE MOUNT PACKAGE • SMALL FOOTPRINT - EFFICIENT USE OF

SPX5202

Abstract: 3033 500ma 3033 sot-23-5 SPX3819M5-L-1.8/TR spx3819m5-l-3.3 SPX3819 LM7805 100ma
Contextual Info: SPX3819 500mA, Low-Noise LDO Voltage Regulator FEATURES • ■ ■ ■ ■ ■ ■ Low Noise: 40µV Possible High Accuracy: 1% Reverse Battery Protection Low Dropout: 340mV at Full Load Low Quiescent Current: 90µA Zero Off-Mode Current Fixed Output: 1.2V, 1.5V, 1.8V, 2.5V, 3.0V,

1N5438

Abstract: tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175
Contextual Info: The Semiconductor DataBook This is the first supplement to the 4th Edition o f the Semiconductor Data Book originally published in July 1969. It is produced to keep an up-to-date listing o f the most advanced semiconductor products. Devices characterized in this supplement include only the type numbers introduced after the publi­

BFM34

Abstract: 100WF
Contextual Info: nu itnut i SEME BFM34 LAB MECHANICAL DATA TetraFET 100W - 28V - 900MHz DIM A B C D E F G H 1 J K M N O P ELECTRICAL CHARACTERISTICS Parameter PER SIDE Drain-Source B Vncc Zero Gate Voltage Drain Current Iq SS Gate Leakage Current Toi. 0.50 0.13 5° 0.13 0.13

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455