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    04NG Search Results

    04NG Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    UCC3804NG4
    Texas Instruments Low-Power BiCMOS Current-Mode PWM 8-PDIP 0 to 70 Visit Texas Instruments Buy

    04NG Datasheets (2)

    Jiangsu JieJie Microelectronics Co Ltd
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    badge JMSH1004NG
    Jiangsu JieJie Microelectronics Co Ltd 100V N-channel Power MOSFET with 4.0 mΩ RDS(ON) at VGS = 10V, 121A continuous drain current, PDFN5x6-8L package, suitable for power tools, e-vehicles, and power management applications. Original PDF
    badge JMSH0804NG
    Jiangsu JieJie Microelectronics Co Ltd 85V N-channel Power MOSFET in PDFN5x6-8L package with 3.1mΩ RDS(ON) at 10V VGS, 137A continuous drain current, low gate charge, and 100% UIS tested for power management and motor driving applications. Original PDF
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    04NG Price and Stock

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    Rochester Electronics LLC MC74ACT04NG

    IC INVERTER 6CH 1-INP 14DIP
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    DigiKey MC74ACT04NG Tube 12,541 790
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    Rochester Electronics LLC SC2904NG

    IC OPAMP GP 8DIP
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    DigiKey SC2904NG Tube 8,850 626
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    BOYD Laconia MAX04NG

    MAX CLIP TO-247/MAX247 STD-FORCE
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    DigiKey MAX04NG Bulk 5,047 1
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    Mouser Electronics MAX04NG 4,707
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    Bisco Industries MAX04NG 5
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    Master Electronics MAX04NG 8,544
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    Sager MAX04NG 1
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    Rochester Electronics LLC IPB020N04NGATMA1

    MOSFET N-CH 40V 140A TO263-7-3
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    DigiKey IPB020N04NGATMA1 Bulk 3,331 185
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    Rochester Electronics LLC IPB052N04NG

    N-CHANNEL POWER MOSFET
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    DigiKey IPB052N04NG Bulk 1,989 472
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    04NG Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    04NG

    Abstract: 48 04NG 4804NG 369D
    Contextual Info: NTD4804NA Advance Information Power MOSFET 25 V, 117 A, Single N−Channel, DPAK/IPAK Features Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices


    Original
    NTD4804NA NTD4804NA/D 04NG 48 04NG 4804NG 369D PDF

    04NG

    Abstract: 48 04NG 369D NTD4804N NTD4804NT4G 4804NG WA117
    Contextual Info: NTD4804N Power MOSFET 30 V, 117 A, Single N−Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com


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    NTD4804N NTD4804N/D 04NG 48 04NG 369D NTD4804N NTD4804NT4G 4804NG WA117 PDF

    48 04NG

    Abstract: 04NG 4804NG 4804N NTD4804NT4G DASF0034379 369D NTD4804N NTD4804N-1G
    Contextual Info: NTD4804N Power MOSFET 30 V, 117 A, Single N-Channel, DPAK/IPAK Features •ăLow RDS on to Minimize Conduction Losses •ăLow Capacitance to Minimize Driver Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăThese are Pb-Free Devices http://onsemi.com


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    NTD4804N NTD4804N/D 48 04NG 04NG 4804NG 4804N NTD4804NT4G DASF0034379 369D NTD4804N NTD4804N-1G PDF

    04ng

    Abstract: NTD5804NG mosfet 04ng 369D NTD5804NT4G 35V10
    Contextual Info: NTD5804N Power MOSFET 40 V, 69 A, Single N−Channel, DPAK/IPAK Features Low RDS on High Current Capability Avalanche Energy Specified These are Pb−Free Devices http://onsemi.com Symbol Value Unit Drain−to−Source Voltage VDSS 40 V Gate−to−Source Voltage − Continuous


    Original
    NTD5804N NTD5804N/D 04ng NTD5804NG mosfet 04ng 369D NTD5804NT4G 35V10 PDF

    48 04NG

    Abstract: 4804NG 04NG NTD4804NT4G 4804N
    Contextual Info: NTD4804N Power MOSFET 30 V, 117 A, Single N−Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com


    Original
    NTD4804N NTD4804N/D 48 04NG 4804NG 04NG NTD4804NT4G 4804N PDF

    Contextual Info: NTD4804N, NVD4804N Power MOSFET 30 V, 117 A, Single N−Channel, DPAK/IPAK Features Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses AEC Q101 Qualified − NVD4804N These Devices are Pb−Free and are RoHS Compliant


    Original
    NTD4804N, NVD4804N NTD4804N/D PDF

    04NG

    Contextual Info: NTD5804N Power MOSFET 40 V, 69 A, Single N−Channel, DPAK/IPAK Features Low RDS on High Current Capability Avalanche Energy Specified These are Pb−Free Devices http://onsemi.com Symbol Value Unit Drain−to−Source Voltage VDSS 40 V Gate−to−Source Voltage − Continuous


    Original
    NTD5804N NTD5804N/D 04NG PDF

    04NG

    Abstract: 369D NTD5804NG NTD5804NT4G
    Contextual Info: NTD5804N Power MOSFET 40 V, 69 A, Single N−Channel, DPAK/IPAK Features Low RDS on High Current Capability Avalanche Energy Specified These are Pb−Free Devices http://onsemi.com Symbol Value Unit Drain−to−Source Voltage VDSS 40 V Gate−to−Source Voltage − Continuous


    Original
    NTD5804N NTD5804N/D 04NG 369D NTD5804NG NTD5804NT4G PDF

    04NG

    Abstract: 369D NTD5804NG NTD5804NT4G
    Contextual Info: NTD5804N Power MOSFET 40 V, 69 A, Single N−Channel, DPAK Features Low RDS on High Current Capability Avalanche Energy Specified These are Pb−Free Devices http://onsemi.com Symbol Value Unit Drain−to−Source Voltage VDSS 40 V Gate−to−Source Voltage − Continuous


    Original
    NTD5804N NTD5804N/D 04NG 369D NTD5804NG NTD5804NT4G PDF

    48 04NG

    Abstract: 4804ng 04NG 4804N NTD4804NT4G 369D NTD4804N WA117
    Contextual Info: NTD4804N Power MOSFET 30 V, 117 A, Single N−Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com


    Original
    NTD4804N NTD4804N/D 48 04NG 4804ng 04NG 4804N NTD4804NT4G 369D NTD4804N WA117 PDF

    49 04NG

    Contextual Info: NTD4904N Power MOSFET 30 V, 79 A, Single N−Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com


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    NTD4904N NTD4904N/D 49 04NG PDF

    Contextual Info: NTD5804N, NTDV5804N Power MOSFET 40 V, 69 A, Single N−Channel, DPAK/IPAK Features Low RDS on High Current Capability Avalanche Energy Specified AEC−Q101 Qualified and PPAP Capable − NTDV5804N These Devices are Pb−Free and are RoHS Compliant http://onsemi.com


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    NTD5804N, NTDV5804N AEC-Q101 NTD5804N/D PDF

    04NG

    Abstract: 49 04ng NTD4904NT4G 4904ng 369D
    Contextual Info: NTD4904N Power MOSFET 30 V, 79 A, Single N−Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com


    Original
    NTD4904N NTD4904N/D 04NG 49 04ng NTD4904NT4G 4904ng 369D PDF

    NTD5804NT4G

    Contextual Info: NTD5804N, NTDV5804N Power MOSFET 40 V, 69 A, Single N−Channel, DPAK/IPAK Features • • • • • Low RDS on High Current Capability Avalanche Energy Specified NTDV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101


    Original
    NTD5804N, NTDV5804N NTD5804N/D NTD5804NT4G PDF

    NTD4904NT4G

    Contextual Info: NTD4904N Power MOSFET 30 V, 79 A, Single N−Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com


    Original
    NTD4904N NTD4904N/D NTD4904NT4G PDF

    Contextual Info: NTD5804N, NTDV5804N Power MOSFET 40 V, 69 A, Single N−Channel, DPAK/IPAK Features Low RDS on High Current Capability Avalanche Energy Specified AEC−Q101 Qualified and PPAP Capable − NTDV5804N These Devices are Pb−Free and are RoHS Compliant http://onsemi.com


    Original
    NTD5804N, NTDV5804N NTD5804N/D PDF

    NTDV5804

    Contextual Info: NTD5804N, NTDV5804N Power MOSFET 40 V, 69 A, Single N−Channel, DPAK/IPAK Features Low RDS on High Current Capability Avalanche Energy Specified AEC−Q101 Qualified and PPAP Capable − NTDV5804N These Devices are Pb−Free and are RoHS Compliant http://onsemi.com


    Original
    NTD5804N, NTDV5804N AEC-Q101 NTD5804N/D NTDV5804 PDF

    04NG

    Abstract: 369D
    Contextual Info: NTD5804N Power MOSFET 40 V, 69 A, Single N−Channel, DPAK/IPAK Features Low RDS on High Current Capability Avalanche Energy Specified These are Pb−Free Devices http://onsemi.com Symbol Value Unit Drain−to−Source Voltage VDSS 40 V Gate−to−Source Voltage − Continuous


    Original
    NTD5804N NTD5804N/D 04NG 369D PDF

    04NG

    Abstract: 4804N 48 04NG 4804NG NTD4804NT4G
    Contextual Info: NTD4804N Power MOSFET 30 V, 117 A, Single N−Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com


    Original
    NTD4804N NTD4804N/D 04NG 4804N 48 04NG 4804NG NTD4804NT4G PDF

    4904ng

    Abstract: 04NG 49 04ng NTD4904NT4G 369D NTD4904N
    Contextual Info: NTD4904N Power MOSFET 30 V, 79 A, Single N−Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com


    Original
    NTD4904N NTD4904N/D 4904ng 04NG 49 04ng NTD4904NT4G 369D NTD4904N PDF

    48 04NG

    Abstract: NVD4804N 04NG 369D NTD4804N 4804NG NVD4
    Contextual Info: NTD4804N, NVD4804N Power MOSFET 30 V, 117 A, Single N−Channel, DPAK/IPAK Features Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses AEC Q101 Qualified − NVD4804N These Devices are Pb−Free and are RoHS Compliant


    Original
    NTD4804N, NVD4804N NTD4804N/D 48 04NG NVD4804N 04NG 369D NTD4804N 4804NG NVD4 PDF

    48 04NG

    Abstract: 04NG
    Contextual Info: NTD4804N, NVD4804N Power MOSFET 30 V, 117 A, Single N−Channel, DPAK/IPAK Features Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses AEC Q101 Qualified − NVD4804N These Devices are Pb−Free and are RoHS Compliant


    Original
    NTD4804N, NVD4804N NTD4804N/D 48 04NG 04NG PDF

    04NG

    Abstract: k 790
    Contextual Info: NTD5804N Power MOSFET 40 V, 69 A, Single N−Channel, DPAK/IPAK Features Low RDS on High Current Capability Avalanche Energy Specified These are Pb−Free Devices http://onsemi.com Symbol Value Unit Drain−to−Source Voltage VDSS 40 V Gate−to−Source Voltage − Continuous


    Original
    NTD5804N NTD5804N/D 04NG k 790 PDF