NVD4 Search Results

Contextual Info: NTD4806N, NVD4806N Power MOSFET 30 V, 76 A, Single N−Channel, DPAK/IPAK Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses AEC−Q101 Qualified and PPAP Capable − NVD4806N

4813NH

Abstract: 13nhg 48 13nhg NVD4813NH 48 13nhg mosfet
Contextual Info: NTD4813NH, NVD4813NH Power MOSFET 30 V, 40 A, Single N−Channel, DPAK/IPAK Features • • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Low RG AEC−Q101 Qualified and PPAP Capable − NVD4813NH

PPAP

Abstract: 4810N
Contextual Info: NTD4810N, NVD4810N Power MOSFET 30 V, 54 A, Single N−Channel, DPAK/IPAK Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses AEC−Q101 Qualified and PPAP Capable − NVD4810N

Contextual Info: NTD4810N, NVD4810N Power MOSFET 30 V, 54 A, Single N−Channel, DPAK/IPAK Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses AEC−Q101 Qualified and PPAP Capable − NVD4810N

4806n

Abstract: NTD4806NT4G 4806ng 48 06ng 369ad
Contextual Info: NTD4806N, NVD4806N Power MOSFET 30 V, 76 A, Single N−Channel, DPAK/IPAK Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses AEC−Q101 Qualified and PPAP Capable − NVD4806N

4856ng

Abstract: NTD4856NT4G
Contextual Info: NTD4856N, NVD4856N Power MOSFET 25 V, 89 A, Single N−Channel, DPAK/IPAK Features • • • • • • Trench Technology Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses

56NG mosfet

Contextual Info: NTD4856N, NVD4856N Power MOSFET 25 V, 89 A, Single N−Channel, DPAK/IPAK Features • • • • • • Trench Technology Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses

Contextual Info: NTD4809N, NVD4809N Power MOSFET 30 V, 58 A, Single N−Channel, DPAK/IPAK Features Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses AEC Q101 Qualified − NVD4809N These Devices are Pb−Free and are RoHS Compliant

Contextual Info: NTD4804N, NVD4804N Power MOSFET 30 V, 117 A, Single N−Channel, DPAK/IPAK Features Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses AEC Q101 Qualified − NVD4804N These Devices are Pb−Free and are RoHS Compliant

369AA

Contextual Info: NTD4805N, NVD4805N Power MOSFET 30 V, 88 A, Single N−Channel, DPAK/IPAK Features •     Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses AEC−Q101 Qualified and PPAP Capable − NVD4805N

Contextual Info: NTD4809NH, NVD4809NH Power MOSFET 30 V, 58 A, Single N−Channel, DPAK/IPAK Features Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses AEC−Q101 Qualified and PPAP Capable − NVD4809NH

Contextual Info: NTD4805N, NVD4805N Power MOSFET 30 V, 88 A, Single N−Channel, DPAK/IPAK Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses AEC−Q101 Qualified and PPAP Capable − NVD4805N

Contextual Info: NTD4856N, NVD4856N Power MOSFET 25 V, 89 A, Single N−Channel, DPAK/IPAK Features • • • • • • Trench Technology Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses

Contextual Info: NTD4808N, NVD4808N Power MOSFET 30 V, 63 A, Single N−Channel, DPAK/IPAK Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses NVD Prefix for Automotive and Other Applications Requiring

Contextual Info: NTD4813NH, NVD4813NH Power MOSFET 30 V, 40 A, Single N−Channel, DPAK/IPAK Features • • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Low RG AEC−Q101 Qualified and PPAP Capable − NVD4813NH

Contextual Info: NTD4805N, NVD4805N Power MOSFET 30 V, 88 A, Single N−Channel, DPAK/IPAK Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses AEC−Q101 Qualified and PPAP Capable − NVD4805N

Contextual Info: NTD4808N, NVD4808N Power MOSFET 30 V, 63 A, Single N−Channel, DPAK/IPAK Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses NVD Prefix for Automotive and Other Applications Requiring

NVD4808N

Contextual Info: NTD4808N, NVD4808N Power MOSFET 30 V, 63 A, Single N−Channel, DPAK/IPAK Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses NVD Prefix for Automotive and Other Applications Requiring

Contextual Info: NTD4813NH, NVD4813NH Power MOSFET 30 V, 40 A, Single N−Channel, DPAK/IPAK Features • • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Low RG NVD Prefix for Automotive and Other Applications Requiring

Contextual Info: NTD4809NH, NVD4809NH Power MOSFET 30 V, 58 A, Single N−Channel, DPAK/IPAK Features Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses AEC−Q101 Qualified and PPAP Capable − NVD4809NH

Contextual Info: NTD4805N, NVD4805N Power MOSFET 30 V, 88 A, Single N−Channel, DPAK/IPAK Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses NVD Prefix for Automotive and Other Applications Requiring

Contextual Info: NTD4815N, NVD4815N Power MOSFET 30 V, 35 A, Single N−Channel, DPAK/IPAK Features • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses NVD Prefix for Automotive and Other Applications Requiring

48 04NG

Abstract: NVD4804N 04NG 369D NTD4804N 4804NG NVD4
Contextual Info: NTD4804N, NVD4804N Power MOSFET 30 V, 117 A, Single N−Channel, DPAK/IPAK Features Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses AEC Q101 Qualified − NVD4804N These Devices are Pb−Free and are RoHS Compliant

4815NG

Abstract: NTD4815N
Contextual Info: NTD4815N, NVD4815N Power MOSFET 30 V, 35 A, Single N−Channel, DPAK/IPAK Features Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses AEC−Q101 Qualified and PPAP Capable − NVD4815N