PPAP Search Results

sot 23 marking code 1ja

Contextual Info: MMBT2369LT1G, SMMBT2369LT1G, MMBT2369ALT1G, SMMBT2369ALT1G Switching Transistors http://onsemi.com NPN Silicon Features • AEC−Q101 Qualified and PPAP Capable  S Prefix for Automotive and Other Applications Requiring Unique SOT−23 CASE 318 STYLE 6

MMBD914LT1G

Abstract: SMMBD914LT1G
Contextual Info: MMBD914LT1G, SMMBD914LT1G, MMBD914LT3G, SMMBD914LT3G High-Speed Switching Diode http://onsemi.com Features • AEC−Q101 Qualified and PPAP Capable  S Prefix for Automotive and Other Applications Requiring Unique  SOT−23 CASE 318 STYLE 8 Site and Control Change Requirements

marking code m1b

Abstract: SMMBT2222ALT1G SMMBT2222A MMBT2222LT1-D MMBT2222AL on semiconductor marking code 1P MMBT2222ALT1G
Contextual Info: MMBT2222L, MMBT2222AL, SMMBT2222AL General Purpose Transistors NPN Silicon http://onsemi.com Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS • • Compliant AEC−Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique

SMMBTA13LT1G

Abstract: SMMBTA14LT1G
Contextual Info: MMBTA13LT1G, SMMBTA13LT1G, MMBTA14LT1G, SMMBTA14LT1G Darlington Amplifier Transistors http://onsemi.com NPN Silicon Features • AEC−Q101 Qualified and PPAP Capable  S Prefix for Automotive and Other Applications Requiring Unique SOT−23 TO−236 CASE 318

SMMBD2837LT1G

Abstract: MA6 diode MARKING CODE MA6
Contextual Info: MMBD2837LT1G, MMBD2838LT1G, SMMBD2837LT1G Monolithic Dual Switching Diodes http://onsemi.com Features • AEC−Q101 Qualified and PPAP Capable  S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements SOT−23 TO−236AB

transistor marking code 3EM SOT-23

Abstract: NSVMMBTH10 MMBTH10LT1G MMBTH10-4LT1G transistor marking 3em transistor 3em Marking code mps
Contextual Info: MMBTH10LT1G, NSVMMBTH10LT1G, MMBTH10LT3G, MMBTH10-4LT1G VHF/UHF Transistor http://onsemi.com NPN Silicon Features • AEC−Q101 Qualified and PPAP Capable  NSV Prefix for Automotive and Other Applications Requiring SOT−23 TO−236 CASE 318 STYLE 6

SBAS20HT1G

Abstract: BAS20HT
Contextual Info: BAS20HT1, SBAS20HT1G High Voltage Switching Diode Features • AEC−Q101 Qualified and PPAP Capable • S Prefix for Automotive and Other Applications Requiring Unique • Site and Control Change Requirements These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

SBC808

Abstract: marking 5F
Contextual Info: BC808-25LT1G, SBC808-25LT1G, BC808-40LT1G General Purpose Transistors http://onsemi.com PNP Silicon COLLECTOR 3 Features • AEC−Q101 Qualified and PPAP Capable • S Prefix for Automotive and Other Applications Requiring Unique • 1 BASE Site and Control Change Requirements

PPAP MANUAL

Contextual Info: MSD602-RT1G, SMSD602-RT1G Preferred Device NPN General Purpose Amplifier Transistor Surface Mount http://onsemi.com Features • AEC−Q101 Qualified and PPAP Capable • S Prefix for Automotive and Other Applications Requiring Unique • SC−59 CASE 318D

BSS123LT1G

Contextual Info: BSS123LT1G, BVSS123LT1G Power MOSFET 170 mAmps, 100 Volts N−Channel SOT−23 http://onsemi.com 170 mAMPS 100 VOLTS RDS on = 6 W Features • AEC−Q101 Qualified and PPAP Capable − BVSS123LT1G • These Devices are Pb−Free and are RoHS Compliant N−Channel

SBCX19LT1G

Abstract: SBCX19
Contextual Info: BCX17LT1G, PNP BCX18LT1G, PNP BCX19LT1G, NPN SBCX19LT1G, NPN General Purpose Transistors http://onsemi.com Voltage and Current are Negative for PNP Transistors SOT−23 TO−236 CASE 318−08 STYLE 6 Features • AEC−Q101 Qualified and PPAP Capable  S Prefix for Automotive and Other Applications Requiring Unique

nts4001

Contextual Info: NTS4001N, NVS4001N Small Signal MOSFET 30 V, 270 mA, Single N−Channel, SC−70 Features • • • • • Low Gate Charge for Fast Switching Small Footprint − 30% Smaller than TSOP−6 ESD Protected Gate AEC−Q101 Qualified and PPAP Capable − NVS4001N

MMSD4148T1G

Abstract: SMMSD4148T1G MMSD4148T3G ON SEMICONDUCTOR MARKING DIAGRAM SOD-123
Contextual Info: MMSD4148T1G, SMMSD4148T1G, MMSD4148T3G, SMMSD4148T3G Switching Diode http://onsemi.com Features •      SOD−123 Surface Mount Package High Breakdown Voltage Fast Speed Switching Time AEC−Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique

NTA7002NT1G

Contextual Info: NTA7002N, NVA7002N Small Signal MOSFET 30 V, 154 mA, Single, N−Channel, Gate ESD Protection, SC−75 http://onsemi.com Features • • • • • Low Gate Charge for Fast Switching Small 1.6 x 1.6 mm Footprint ESD Protected Gate AEC−Q101 Qualified and PPAP Capable − NVA7002N

SBC846B

Abstract: BC850BLT1G marking 1a bc847blt1g SBC847BLT1 SBC846ALT1G SERIES SBC846ALT1G 1G t 90 SOT-23 SBC847C
Contextual Info: BC846ALT1G Series, SBC846ALT1G Series General Purpose Transistors NPN Silicon Features http://onsemi.com • Moisture Sensitivity Level: 1 • ESD Rating − Human Body Model: >4000 V • • • ESD Rating − Machine Model: >400 V AEC−Q101 Qualified and PPAP Capable

marking code P1D

Abstract: SPZTA42T1G PZTA42T1G
Contextual Info: PZTA42T1G, SPZTA42T1G High Voltage Transistor Surface Mount NPN Silicon http://onsemi.com Features • AEC−Q101 Qualified and PPAP Capable  S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements  These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

sot-23 Marking M1F

Abstract: SMMBT5551 SMMBT5551LT1G SMMBT5551LT3G SMMBT551 MMBT5551LT MMBT5551LT1G mmbt5551l
Contextual Info: MMBT5550L, MMBT5551L, SMMBT5551L High Voltage Transistors NPN Silicon http://onsemi.com Features • AEC−Q101 Qualified and PPAP Capable • S Prefix for Automotive and Other Applications Requiring Unique • COLLECTOR 3 Site and Control Change Requirements

Contextual Info: A5970AD Up to 1 A step down-switching regulator for automotive applications Datasheet - production data Application • Dedicated to automotive applications Description SO-8 Features  Qualified following the AEC-Q100 requirements see PPAP for more details

2N7002L

Abstract: 2N7002LT3G 2N7002LT1G 2N7002LT3H
Contextual Info: 2N7002L Small Signal MOSFET 60 V, 115 mA, N−Channel SOT−23 Features • AEC Qualified • PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Rating Symbol Value Unit Drain−Source Voltage VDSS 60

Contextual Info: K.V Series www.vishay.com Vishay BCcomponents Radial Leaded Multilayer Ceramic Capacitors For Automotive Applications Class 1 and Class 2, 50 VDC, 100 VDC, 200 VDC FEATURES • AEC-Q200 qualified with PPAP available • High reliability MLCC insert with wet build

VJ....31X RoHS Automotive MLCC

Abstract: GA....34G Automotive MLCC
Contextual Info: VJ.31/VJ.34 Automotive MLCC www.vishay.com Vishay Vitramon Surface Mount Multilayer Ceramic Chip Capacitors for Automotive Applications FEATURES • • • • • • • • • AEC-Q200 qualified with PPAP available Available in 0402 to 1812 body size

COOLRUNNER-II examples

Abstract: XA CoolRunner-II XAPP393 VQG44 CoolRunner-II CPLD AEC-Q100 TS16949 XA2C128 XA2C256 XA2C32A
Contextual Info: CoolRunner-II CPLD XA Product Family R DS315-1 v1.0 October 18, 2004 Advance Product Specification Features • • • • • AEC-Q100 device qualification and full PPAP support available in both extended temperature Q-grade and I-grade. Optimized for 1.8V systems

Contextual Info: NVGS4141N Product Preview Power MOSFET 30 V, 7.7 A, Single N−Channel, TSOP−6 Features • • • • Low RDS on Low Gate Charge AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR−Free and are RoHS Compliant http://onsemi.com

Contextual Info: NVMFD5483NL Power MOSFET 60 V, 36 mW, 24 A, Dual N−Channel Features • • • • • • Small Footprint 5x6 mm for Compact Designs Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses 175°C Operating Temperature AEC−Q101 Qualified and PPAP Capable