2N7002L Search Results

2N7002L

Abstract: 2N7002LT3G 2N7002LT1G 2N7002LT3H
Contextual Info: 2N7002L Small Signal MOSFET 60 V, 115 mA, N−Channel SOT−23 Features • AEC Qualified • PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Rating Symbol Value Unit Drain−Source Voltage VDSS 60

2N7002LT1

Abstract: 702 TRANSISTOR sot-23 2N7002LT1 Motorola 702 surface mount transistor
Contextual Info: MOTOROLA Order this document by 2N7002LT1/D SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor N–Channel Enhancement 2N7002LT1 3 DRAIN Motorola Preferred Device 1 GATE 3 2 SOURCE 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Drain–Source Voltage VDSS 60 Vdc

Small Signal MOSFET 60 V, 115 mA, N-Channel SOT-23

Abstract: 2N7002LT1G 2N7002LT3G 2N7002L 2N7002LT1 2N7002LT3 sot-23 MARKING CODE 70.2 2N7002L-D marking code 702 SOT23
Contextual Info: 2N7002L Small Signal MOSFET 60 V, 115 mA, N-Channel SOT-23 Features •ăAEC Qualified •ăPPAP Capable •ăPb-Free Packages are Available MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage VDSS 60 Vdc Drain-Gate Voltage RGS = 1.0 MW VDGR 60

2N3819 fet

Abstract: BC237
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor N–Channel Enhancement 2N7002LT1 3 DRAIN Motorola Preferred Device 1 GATE 3 2 SOURCE 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Drain–Source Voltage VDSS 60 Vdc Drain–Gate Voltage RGS = 1.0 MΩ

Contextual Info: 2N7002L, 2V7002L Small Signal MOSFET 60 V, 115 mA, N−Channel SOT−23 Features • 2V Prefix for Automotive and Other Applications Requiring Unique • Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable 2V7002L These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Contextual Info: M A X I M U M R A T IN G S Rating D rain-S ource Voltage Drain-G ate V o ltage R q S " M il * Drain C urrent — C o ntinuous TC = 25°C(1) TC = 100°C(1) - Pulsed (2) Tç Tc Value VDSS 60 Vdc vdgr 60 Vdc 'd Id ±115 ±75 mA 'd m ±aoo 2N7002LT1* CASE 318-07 STYLE 21

2N7002LT1

Contextual Info: I MOTOROLA Order this document by 2N7002LT1/D SEMICONDUCTOR TECHNICAL DATA TM OS FET Transistor 2N 7002LT1 N -C h a n n e l E n hancem en t 3 drain Motorola Preferred Device MAXIMUM RATINGS Rating Symbol Value Unit V d SS 60 Vdc VDGR 60 Vdc 'D Id mAdc 'd m

2V7002LT1G

Contextual Info: 2N7002L, 2V7002L Small Signal MOSFET 60 V, 115 mA, N−Channel SOT−23 Features • 2V Prefix for Automotive and Other Applications Requiring Site and • • • Change Controls AEC Qualified − 2V7002L PPAP Capable − 2V7002L These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N7002LL Preliminary Power MOSFET 60V, 115mA, N-CHANNEL MOSFET „ DESCRIPTION 3 The UTC 2N7002LL uses advanced technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in

sot-23 MARKING CODE 70.2

Abstract: 2N7002LT1 702 sot-23 2N7002LT3 mst 702 sot-23 702 marking 702 sot-23 Sot-23 MARKING 702
Contextual Info: 2N7002LT1 Preferred Device Small Signal MOSFET 115 mAmps, 60 Volts N–Channel SOT–23 MAXIMUM RATINGS Rating http://onsemi.com Symbol Value Unit Drain–Source Voltage VDSS 60 Vdc Drain–Gate Voltage RGS = 1.0 MΩ VDGR 60 Vdc Drain Current – Continuous TC = 25°C (Note 1.)

Contextual Info: 2N7002L Small Signal MOSFET 60 V, 115 mA, N−Channel SOT−23 Features • Pb−Free Packages are Available http://onsemi.com MAXIMUM RATINGS Rating Symbol Value Unit Drain−Source Voltage VDSS 60 Vdc Drain−Gate Voltage RGS = 1.0 MW VDGR 60 Vdc ID ID

2N7002LT1G

Abstract: 2N7002L 2N7002LT1 2N7002LT3 2N7002LT3G
Contextual Info: 2N7002L Small Signal MOSFET 60 V, 115 mA, N-Channel SOT-23 Features •ăAEC Qualified •ăPPAP Capable •ăPb-Free Packages are Available http://onsemi.com MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage VDSS 60 Vdc Drain-Gate Voltage RGS = 1.0 MW

702 TRANSISTOR sot-23

Abstract: fet af sot-23 2N7002LT1 2N7002LT1 Motorola
Contextual Info: MOTOROLA Order this document by 2N7002LT1/D SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor N–Channel Enhancement 2N7002LT1 3 DRAIN Motorola Preferred Device 1 GATE 3 2 SOURCE 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Drain–Source Voltage VDSS 60 Vdc

2N7002L

Abstract: QW-R502-284
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N7002LL Preliminary Power MOSFET 60V, 115mA, N-CHANNEL MOSFET „ DESCRIPTION 3 The UTC 2N7002LL uses advanced technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in

marking 702

Abstract: 2N7002LT ON
Contextual Info: WILLAS FM120-M+ THRU 2N7002LT1 FM1200-M+ Small Signal MOSFET 115 mAmps, 60 Volts 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor N-Channel Enhancement 2N7002LT1 3drain Motorola Preferred Device m 2 SOURCE M AXIM U M RATINGS 2 Rating Symbol Value D rain-Source Voltage VDSS 60 Vdc Drain-G ate Voltage Rq s = 1 -0 MS} VDGR 60 Vdc

sot-23 MARKING CODE 70.2

Abstract: 2N7002L 2N7002LT1 2N7002LT1G 2N7002LT3 2N7002LT3G
Contextual Info: 2N7002L Preferred Device Small Signal MOSFET 60 V, 115 mA N−Channel SOT−23 http://onsemi.com Features • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish V BR DSS RDS(on) MAX ID MAX 60 V 7.5 mW @ 10 V, 500 mA 115 mA MAXIMUM RATINGS

Contextual Info: UNISONICTECHNOLOGIESCO., LTD 2N7002L Preliminary Power MOSFET 6 0 V , 1 1 5 m A, N -CH AN N EL M OSFET ̈ DESCRI PT I ON 3 The UTC 2N7002L uses advanced technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N7002LL Preliminary Power MOSFET 60V, 115mA N-CHANNEL POWER MOSFET „ DESCRIPTION 3 The UTC 2N7002LL uses advanced technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in

Contextual Info: 2N7002L, 2V7002L Small Signal MOSFET 60 V, 115 mA, N−Channel SOT−23 Features • 2V Prefix for Automotive and Other Applications Requiring Site and • • • Change Controls AEC Qualified − 2V7002L PPAP Capable − 2V7002L These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N7002LL Preliminary Power MOSFET 60V, 115mA N-CHANNEL POWER MOSFET  DESCRIPTION 3 The UTC 2N7002LL uses advanced technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in

2N7002LT1

Abstract: 2N7002LT3G 2N7002L 2N7002LT1G 2N7002LT3
Contextual Info: 2N7002L Small Signal MOSFET 60 V, 115 mA, N−Channel SOT−23 Features • Pb−Free Packages are Available http://onsemi.com MAXIMUM RATINGS Rating Symbol Value Unit Drain−Source Voltage VDSS 60 Vdc Drain−Gate Voltage RGS = 1.0 MW VDGR 60 Vdc ID ID

2N7002LT1G ON Semiconductor

Contextual Info: 2N7002L, 2V7002L Small Signal MOSFET 60 V, 115 mA, N−Channel SOT−23 Features • 2V Prefix for Automotive and Other Applications Requiring Site and • • • Change Controls AEC Qualified − 2V7002L PPAP Capable − 2V7002L These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

RC0402JR-070RL

Abstract: RC0402FR-07100KL SM0402 MFR Yageo GRM21BR60J106ME19L C4170 GRM32ER61C226KE20 SSQ-105-02-T-D-RA RC0402FR AN10
Contextual Info: Description Features The ZL2105 is an innovative mixed-signal power management and conversion IC that combines an integrated step-down DC-DC converter with key power and thermal management functions in a single package. The ZL2105EV2 platform allows evaluation of the