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    4815NG Search Results

    4815NG Datasheets Context Search

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    Contextual Info: NTD4815N Power MOSFET 30 V, 35 A, Single N−Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com


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    ntd4815nntd4815n/d PDF

    4815ng

    Abstract: 369D NTD4815N B R 115
    Contextual Info: NTD4815N Power MOSFET 30 V, 35 A, Single N−Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com


    Original
    ntd4815nntd4815n/d4815ng369d+1b r 115 PDF

    Contextual Info: NTD4815N Power MOSFET 30 V, 35 A, Single N−Channel, DPAK/IPAK Features Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com Applications


    Original
    ntd4815nntd4815n/d PDF

    4815NG

    Abstract: 369D NTD4815N
    Contextual Info: NTD4815N Power MOSFET 30 V, 35 A, Single N-Channel, DPAK/IPAK Features •ăLow RDS on to Minimize Conduction Losses •ăLow Capacitance to Minimize Driver Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăThese are Pb-Free Devices http://onsemi.com


    Original
    ntd4815nntd4815n/d4815ng369d PDF

    Contextual Info: NTD4815N, NVD4815N Power MOSFET 30 V, 35 A, Single N−Channel, DPAK/IPAK Features • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses NVD Prefix for Automotive and Other Applications Requiring


    Original
    ntd4815nnvd4815nntd4815n/d PDF

    4815NG

    Abstract: Mosfet 4815n 369D NTD4815N 25VGS NTD4815N-35G
    Contextual Info: NTD4815N Power MOSFET 30 V, 35 A, Single N-Channel, DPAK/IPAK Features •ăLow RDS on to Minimize Conduction Losses •ăLow Capacitance to Minimize Driver Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăThese are Pb-Free Devices http://onsemi.com


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    ntd4815nntd4815n/d4815ngmosfet 4815n+3369d25vgsntd4815n-35g PDF

    4815ng

    Abstract: NTD4815NT4G NTD4815N 369D
    Contextual Info: NTD4815N Power MOSFET 30 V, 35 A, Single N−Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com


    Original
    ntd4815nntd4815n/d4815ngntd4815nt4g+1369d PDF

    4815NG

    Abstract: NTD4815N
    Contextual Info: NTD4815N, NVD4815N Power MOSFET 30 V, 35 A, Single N−Channel, DPAK/IPAK Features Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses AEC−Q101 Qualified and PPAP Capable − NVD4815N


    Original
    ntd4815nnvd4815naec-q101ntd4815n/d+14815ng PDF

    Contextual Info: NTD4815N, NVD4815N Power MOSFET 30 V, 35 A, Single N−Channel, DPAK/IPAK Features Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses AEC−Q101 Qualified and PPAP Capable − NVD4815N


    Original
    ntd4815nnvd4815nntd4815n/d PDF