369AA Search Results

369AA-01

Abstract: 369AA On semiconductor date Code dpak YEAR A d1l4
Contextual Info: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DPAK SINGLE GUAGE CASE 369AA−01 ISSUE B 4 1 2 DATE 03 JUN 2010 3 SCALE 1:1 A E b3 c2 B Z D 1 L4 A 4 L3 2 b2 H DETAIL A 3 c b 0.005 (0.13) e M H C L2 GAUGE PLANE C L L1 DETAIL A A1 ROTATED 905 CW STYLE 1: PIN 1. BASE

ndf02n60zg

Abstract: NDD02N60ZT4G NDD02N60Z g1Dv ndf02n60 NDF02N60Z 60ZG
Contextual Info: NDF02N60Z, NDD02N60Z N-Channel Power MOSFET 600 V, 4.8 W Features • • • • • Low ON Resistance Low Gate Charge ESD Diode−Protected Gate 100% Avalanche Tested These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com

NDF05N50ZG

Abstract: NDF05N50 5n50zg NDD05N50 50ZG NDD05N50Z-1G NDD05N50ZT4G
Contextual Info: NDF05N50Z, NDD05N50Z N-Channel Power MOSFET 500 V, 1.5 W Features • • • • • • Low ON Resistance Low Gate Charge ESD Diode−Protected Gate 100% Avalanche Tested 100% Rg Tested These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

6414a

Contextual Info: NTD6414AN, NVD6414AN N-Channel Power MOSFET 100 V, 32 A, 37 mW Features Low RDS on High Current Capability 100% Avalanche Tested AEC Q101 Qualified − NVD6414AN These Devices are Pb−Free and are RoHS Compliant http://onsemi.com MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Contextual Info: NDD60N900U1 Product Preview N-Channel Power MOSFET 600 V, 900 mW http://onsemi.com Features • 100% Avalanche Tested • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V BR DSS RDS(ON) MAX 600 V 900 mW @ 10 V Compliant ABSOLUTE MAXIMUM RATINGS (TJ = 25°C unless otherwise

Contextual Info: NDD60N745U1 Product Preview N-Channel Power MOSFET 600 V, 745 mW http://onsemi.com Features • 100% Avalanche Tested • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V BR DSS RDS(ON) MAX 600 V 745 mW @ 10 V Compliant ABSOLUTE MAXIMUM RATINGS (TJ = 25°C unless otherwise

16ang

Abstract: NTD6416AN 369D NTD6416ANT4G
Contextual Info: NTD6416AN N-Channel Power MOSFET 100 V, 17 A, 81 mW Features Low RDS on High Current Capability 100% Avalanche Tested These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol

58 65NG mosfet

Abstract: 65NG 369D NTD5865NT4G
Contextual Info: NTD5865N N-Channel Power MOSFET 60 V, 38 A, 18 mW Features Low Gate Charge Fast Switching High Current Capability 100% Avalanche Tested These Devices are Pb−Free, Halogen Free and are RoHS Compliant MAXIMUM RATINGS TJ = 25°C unless otherwise noted Symbol

369D

Abstract: NTD4857N NTD4857N-1G NTD4857N-35G NTD4857NT4G 369AC
Contextual Info: NTD4857N Power MOSFET 25 V, 78 A, Single N-Channel, DPAK/IPAK Features Trench Technology Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices http://onsemi.com

mosfet on 09ng

Abstract: 09NG 369D NTD4909NT4G 369ad 4909ng
Contextual Info: NTD4909N Power MOSFET 30 V, 41 A, Single N−Channel, DPAK/IPAK Features Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com V(BR)DSS

Contextual Info: NTD5414N, NVD5414N Power MOSFET 24 A, 60 V Single N−Channel DPAK Features • • • • • Low RDS on High Current Capability Avalanche Energy Specified NVD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101

mosfet 63ng

Abstract: MOSFET 48 63ng 49 63ng NTD4863N
Contextual Info: NTD4863N Power MOSFET 25 V, 49 A, Single N−Channel, DPAK/IPAK Features • • • • • Trench Technology Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices

Contextual Info: NTD5865N N-Channel Power MOSFET 60 V, 43 A, 18 mW Features • • • • • Low Gate Charge Fast Switching High Current Capability 100% Avalanche Tested These Devices are Pb−Free, Halogen Free and are RoHS Compliant http://onsemi.com V BR DSS RDS(on) MAX

Contextual Info: NTD6414AN, NVD6414AN N-Channel Power MOSFET 100 V, 32 A, 37 mW Features • • • • • Low RDS on High Current Capability 100% Avalanche Tested NVD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101

Contextual Info: NTD4806N, NVD4806N Power MOSFET 30 V, 76 A, Single N−Channel, DPAK/IPAK Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses AEC−Q101 Qualified and PPAP Capable − NVD4806N

Contextual Info: NTD6416ANL, NVD6416ANL N-Channel Power MOSFET 100 V, 19 A, 74 mW Features • • • • • Low RDS on High Current Capability 100% Avalanche Tested NVD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101

60NG

Abstract: 4860ng 4860N NTD4860N Power MOSFET 369D NTD4860N
Contextual Info: NTD4860N Power MOSFET 25 V, 65 A, Single N-Channel, DPAK/IPAK Features Trench Technology Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices http://onsemi.com

48 08NG

Abstract: 4808ng 369D NTD4808N 08NG
Contextual Info: NTD4808N Power MOSFET 30 V, 63 A, Single N-Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices http://onsemi.com

369D

Abstract: NTD4970N NTD4970NT4G 70ng
Contextual Info: NTD4970N Advance Information Power MOSFET 30 V, 36 A, Single N−Channel, DPAK/IPAK Features Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Three Package Variations for Design Flexibility

6415ANL

Abstract: NTD6415ANL NTD6415ANLT4G 6415ANLG
Contextual Info: NTD6415ANL N- Channel Power MOSFET 100 V, 23 A, 56 mΩ, Logic Level Features •    Low RDS on 100% Avalanche Tested AEC-Q101 Qualified These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com V(BR)DSS RDS(on) MAX

NVD5862

Contextual Info: NVD5862N Power MOSFET 60 V, 5.7 mW, 98 A, Single N−Channel Features • • • • • Low RDS on to Minimize Conduction Losses High Current Capability Avalanche Energy Specified AEC−Q101 Qualified These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

NVD5867

Abstract: NVD5867NLT4G 67LG 051BSC
Contextual Info: NVD5867NL Power MOSFET 60 V, 22 A, 39 mW, Single N−Channel Features • • • • • Low RDS on to Minimize Conduction Losses High Current Capability Avalanche Energy Specified AEC−Q101 Qualified These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

NVD5865

Contextual Info: NVD5865NL Power MOSFET 60 V, 38 A, 16 mW, Single N−Channel Features • • • • • Low RDS on to Minimize Conduction Losses High Current Capability Avalanche Energy Specified AEC−Q101 Qualified These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

N03G

Abstract: nc555 nc 555 65N03 369D NTD65N03R NTD65N03RG NTD65N03RT4 NTD65N03RT4G
Contextual Info: NTD65N03R Power MOSFET 25 V, 65 A, Single N−Channel, DPAK Features • • • • Low RDS on Ultra Low Gate Charge Low Reverse Recovery Charge Pb−Free Packages are Available http://onsemi.com V(BR)DSS RDS(on) TYP Applications • Desktop CPU Power • DC−DC Converters