60NG Search Results
60NG Price and Stock
Knowles Corporation 0402BB104K160NGTMultilayer Ceramic Capacitors MLCC - SMD/SMT .1UF 16V 10% 0402 |
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0402BB104K160NGT | 9,201 |
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TAIYO YUDEN LSMCG321611T160NGFerrite Beads HI CURR 1206 16 OHMS 30% |
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LSMCG321611T160NG | 2,000 |
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TAIYO YUDEN LCMCA451611T560NGFerrite Beads HI CURR 1806 56 OHM |
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LCMCA451611T560NG | 405 |
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TAIYO YUDEN LLMCG321611T160NGPower Inductors - SMD FERRITE BEAD, HIGH CURRENT CHIP, 1206, 16 OHMS30%, T&R |
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LLMCG321611T160NG |
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TAIYO YUDEN LSMCA451611T560NGFerrite Beads HI CURR 1806 56 OHMS 30% |
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LSMCA451611T560NG |
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60NG Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
60NG
Abstract: 4860ng 4860N NTD4860N Power MOSFET 369D NTD4860N
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Original |
NTD4860N NTD4860N/D 60NG 4860ng 4860N NTD4860N Power MOSFET 369D NTD4860N | |
4860ng
Abstract: 60NG 369D NTD4860N
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Original |
NTD4860N NTD4860N/D 4860ng 60NG 369D NTD4860N | |
60NG
Abstract: 4960ng NTD4960NT4G 4960N 369D 051BSC
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NTD4960N NTD4960N/D 60NG 4960ng NTD4960NT4G 4960N 369D 051BSC | |
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Contextual Info: NTD4960N Product Preview Power MOSFET 30 V, 55 A, Single N−Channel, DPAK/IPAK Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Three Package Variations for Design Flexibility |
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NTD4960N NTD4960N/D | |
60NGContextual Info: NTD4960N Power MOSFET 30 V, 55 A, Single N−Channel, DPAK/IPAK Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Three Package Variations for Design Flexibility |
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NTD4960N NTD4960N/D 60NG | |
60NGContextual Info: NTD4860N Power MOSFET 25 V, 65 A, Single N−Channel, DPAK/IPAK Features • • • • • Trench Technology Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices |
Original |
NTD4860N NTD4860N/D 60NG | |
ntd4860n-1gContextual Info: NTD4860N Power MOSFET 25 V, 65 A, Single N-Channel, DPAK/IPAK Features Trench Technology Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices http://onsemi.com |
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NTD4860N NTD4860N/D ntd4860n-1g | |
4960ng
Abstract: 60NG
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Original |
NTD4960N NTD4960N/D 4960ng 60NG |