Part Number
    Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    60NG Search Results

    SF Impression Pixel

    60NG Price and Stock

    Select Manufacturer

    Knowles Corporation 0402BB104K160NGT

    Multilayer Ceramic Capacitors MLCC - SMD/SMT .1UF 16V 10% 0402
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics 0402BB104K160NGT 9,201
    • 1 $1.61
    • 10 $0.85
    • 100 $0.78
    • 1000 $0.64
    • 10000 $0.56
    Buy Now

    TAIYO YUDEN LSMCG321611T160NG

    Ferrite Beads HI CURR 1206 16 OHMS 30%
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics LSMCG321611T160NG 2,000
    • 1 $0.18
    • 10 $0.13
    • 100 $0.09
    • 1000 $0.05
    • 10000 $0.05
    Buy Now

    TAIYO YUDEN LCMCA451611T560NG

    Ferrite Beads HI CURR 1806 56 OHM
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics LCMCA451611T560NG 405
    • 1 $0.36
    • 10 $0.25
    • 100 $0.17
    • 1000 $0.10
    • 10000 $0.10
    Buy Now

    TAIYO YUDEN LLMCG321611T160NG

    Power Inductors - SMD FERRITE BEAD, HIGH CURRENT CHIP, 1206, 16 OHMS30%, T&R
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics LLMCG321611T160NG
    • 1 $0.15
    • 10 $0.12
    • 100 $0.09
    • 1000 $0.05
    • 10000 $0.05
    Get Quote

    TAIYO YUDEN LSMCA451611T560NG

    Ferrite Beads HI CURR 1806 56 OHMS 30%
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics LSMCA451611T560NG
    • 1 $0.20
    • 10 $0.14
    • 100 $0.10
    • 1000 $0.06
    • 10000 $0.05
    Get Quote

    60NG Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    60NG

    Abstract: 4860ng 4860N NTD4860N Power MOSFET 369D NTD4860N
    Contextual Info: NTD4860N Power MOSFET 25 V, 65 A, Single N-Channel, DPAK/IPAK Features Trench Technology Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices http://onsemi.com


    Original
    NTD4860N NTD4860N/D 60NG 4860ng 4860N NTD4860N Power MOSFET 369D NTD4860N PDF

    4860ng

    Abstract: 60NG 369D NTD4860N
    Contextual Info: NTD4860N Power MOSFET 25 V, 65 A, Single N-Channel, DPAK/IPAK Features •ăTrench Technology •ăLow RDS on to Minimize Conduction Losses •ăLow Capacitance to Minimize Driver Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăThese are Pb-Free Devices


    Original
    NTD4860N NTD4860N/D 4860ng 60NG 369D NTD4860N PDF

    60NG

    Abstract: 4960ng NTD4960NT4G 4960N 369D 051BSC
    Contextual Info: NTD4960N Power MOSFET 30 V, 55 A, Single N−Channel, DPAK/IPAK Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Three Package Variations for Design Flexibility


    Original
    NTD4960N NTD4960N/D 60NG 4960ng NTD4960NT4G 4960N 369D 051BSC PDF

    Contextual Info: NTD4960N Product Preview Power MOSFET 30 V, 55 A, Single N−Channel, DPAK/IPAK Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Three Package Variations for Design Flexibility


    Original
    NTD4960N NTD4960N/D PDF

    60NG

    Contextual Info: NTD4960N Power MOSFET 30 V, 55 A, Single N−Channel, DPAK/IPAK Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Three Package Variations for Design Flexibility


    Original
    NTD4960N NTD4960N/D 60NG PDF

    60NG

    Contextual Info: NTD4860N Power MOSFET 25 V, 65 A, Single N−Channel, DPAK/IPAK Features • • • • • Trench Technology Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices


    Original
    NTD4860N NTD4860N/D 60NG PDF

    ntd4860n-1g

    Contextual Info: NTD4860N Power MOSFET 25 V, 65 A, Single N-Channel, DPAK/IPAK Features Trench Technology Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices http://onsemi.com


    Original
    NTD4860N NTD4860N/D ntd4860n-1g PDF

    4960ng

    Abstract: 60NG
    Contextual Info: NTD4960N Power MOSFET 30 V, 55 A, Single N−Channel, DPAK/IPAK Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Three Package Variations for Design Flexibility


    Original
    NTD4960N NTD4960N/D 4960ng 60NG PDF