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Intel Corporation 7260.NGWG.R 936135 - Bulk (Alt: 7260.NGWG.R 936135)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	7260.NGWG.R 936135	Bulk		2 Weeks, 6 Days	100	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Intel Corporation 8260.NGWMGNVSQF947571 (Alt: 8260.NGWMGNVSQF947571)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	8260.NGWMGNVSQF947571				100	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Samtec Inc MPAT-160-N-G-14B - Bulk (Alt: MPAT-160-N-G-14B)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	MPAT-160-N-G-14B	Bulk		6 Weeks, 3 Days	1	1 $74.99 10 $74.99 100 $52.56 1000 $51.76 10000 $51.76	Buy Now
Sager	MPAT-160-N-G-14B				1	1 $74.99 10 $70.99 100 $52.82 1000 $48.21 10000 $48.21	Buy Now
Master Electronics	MPAT-160-N-G-14B					1 $85.53 10 $76.86 100 $52.82 1000 $52.82 10000 $52.82	Buy Now
Bel Fuse SQE48T17060-NGB0G - Tape and Reel (Alt: SQE48T17060-NGB0G)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SQE48T17060-NGB0G	Tape & Reel		74 Weeks	288	1 - 10 - 100 - 1000 $71.80 10000 $66.41	Buy Now
Avnet Abacus	SQE48T17060-NGB0G			52 Weeks	288	1 - 10 - 100 - 1000 - 10000 -	Get Quote
TAIYO YUDEN LLMCA451611T560NG Ferrite Bead 56Ohm 6A 7Milliohms Wirewound 2-Pin 1806 Emboss T/R - Tape and Reel (Alt: LLMCA451611T560NG)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	LLMCA451611T560NG	Tape & Reel		6 Weeks	2,000	1 - 10 - 100 - 1000 - 10000 $0.06	Buy Now
Avnet Abacus	LLMCA451611T560NG			17 Weeks	2,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote

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60NG Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
60NG Abstract: 4860ng 4860N NTD4860N Power MOSFET 369D NTD4860N Contextual Info: NTD4860N Power MOSFET 25 V, 65 A, Single N-Channel, DPAK/IPAK Features Trench Technology Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices http://onsemi.com	Original	ntd4860n ntd4860n/d 60ng 4860ng +34860n ntd4860n power mosfet 369d	PDF
4860ng Abstract: 60NG 369D NTD4860N Contextual Info: NTD4860N Power MOSFET 25 V, 65 A, Single N-Channel, DPAK/IPAK Features •ăTrench Technology •ăLow RDS on to Minimize Conduction Losses •ăLow Capacitance to Minimize Driver Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăThese are Pb-Free Devices	Original	ntd4860n ntd4860n/d 4860ng 60ng +1369d	PDF
60NG Abstract: 4960ng NTD4960NT4G 4960N 369D 051BSC Contextual Info: NTD4960N Power MOSFET 30 V, 55 A, Single N−Channel, DPAK/IPAK Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Three Package Variations for Design Flexibility	Original	ntd4960n ntd4960n/d 60ng 4960ng +4ntd4960nt4g 4960n 369d 051bsc	PDF
Contextual Info: NTD4960N Product Preview Power MOSFET 30 V, 55 A, Single N−Channel, DPAK/IPAK Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Three Package Variations for Design Flexibility	Original	ntd4960n ntd4960n/d	PDF
60NG Contextual Info: NTD4960N Power MOSFET 30 V, 55 A, Single N−Channel, DPAK/IPAK Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Three Package Variations for Design Flexibility	Original	ntd4960n ntd4960n/d 60ng	PDF
60NG Contextual Info: NTD4860N Power MOSFET 25 V, 65 A, Single N−Channel, DPAK/IPAK Features • • • • • Trench Technology Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices	Original	ntd4860n ntd4860n/d 60ng	PDF
ntd4860n-1g Contextual Info: NTD4860N Power MOSFET 25 V, 65 A, Single N-Channel, DPAK/IPAK Features Trench Technology Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices http://onsemi.com	Original	ntd4860n ntd4860n/d ntd4860n-1g	PDF
4960ng Abstract: 60NG Contextual Info: NTD4960N Power MOSFET 30 V, 55 A, Single N−Channel, DPAK/IPAK Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Three Package Variations for Design Flexibility	Original	ntd4960n ntd4960n/d 4960ng 60ng	PDF