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    4860N Search Results

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    4860N Price and Stock

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    UMW NTD4860NT4G

    MOSFET N-CH 25V 10.4A/65A DPAK
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    DigiKey () NTD4860NT4G Cut Tape 1,750 1
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    NTD4860NT4G Digi-Reel 1,750 1
    • 1 $0.86
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    Rochester Electronics LLC NTD4860NT4H

    RF MOSFET 25V DPAK
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    DigiKey NTD4860NT4H Bulk 781
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    onsemi NTD4860N-1G

    MOSFET N-CH 25V 10.4A/65A IPAK
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    Rochester Electronics NTD4860N-1G 8,475 1
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    Rochester Electronics LLC NTD4860N-1G

    MOSFET N-CH 25V 10.4A/65A IPAK
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    DigiKey NTD4860N-1G Tube 1,150
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    Rochester Electronics LLC NTD4860NA-1G

    MOSFET N-CH 25V 10.4A/65A IPAK
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    DigiKey NTD4860NA-1G Tube 1,366
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    4860N Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    60NG

    Abstract: 4860ng 4860N NTD4860N Power MOSFET 369D NTD4860N
    Contextual Info: 4860N Power MOSFET 25 V, 65 A, Single N-Channel, DPAK/IPAK Features Trench Technology Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices http://onsemi.com


    Original
    NTD4860N NTD4860N/D 60NG 4860ng 4860N NTD4860N Power MOSFET 369D NTD4860N PDF

    RR264M-400

    Contextual Info: RR264M-400 Diodes Rectifying diode RR264M- 400 zApplications General rectification zDimensions Unit : mm zLand size figure (Unit : mm) 0.1±0.1 0.05 1.2 0.85 1.6±0.1 2.6±0.1 ① 3.5±0.2 3.05 zFeatures 1) Small power mold type. (PMDU) 2) High reliability.


    Original
    RR264M-400 RR264M- OD-123 RR264M-400 PDF

    4860ng

    Abstract: 60NG 369D NTD4860N
    Contextual Info: 4860N Power MOSFET 25 V, 65 A, Single N-Channel, DPAK/IPAK Features •ăTrench Technology •ăLow RDS on to Minimize Conduction Losses •ăLow Capacitance to Minimize Driver Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăThese are Pb-Free Devices


    Original
    NTD4860N NTD4860N/D 4860ng 60NG 369D NTD4860N PDF

    RR264M-400

    Abstract: 4860N
    Contextual Info: RR264M-400 Diodes Rectifying diode RR264M- 400 zApplications General rectification zExternal dimensions Unit : mm zLand size figure (Unit : mm) 0.1±0.1 0.05 1.2 0.85 1.6±0.1 2.6±0.1 ① 3.5±0.2 3.05 zFeatures 1) Small power mold type. (PMDU)


    Original
    RR264M-400 RR264M- OD-123 RR264M-400 4860N PDF

    60NG

    Contextual Info: 4860N Power MOSFET 25 V, 65 A, Single N−Channel, DPAK/IPAK Features • • • • • Trench Technology Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices


    Original
    NTD4860N NTD4860N/D 60NG PDF

    ntd4860n-1g

    Contextual Info: 4860N Power MOSFET 25 V, 65 A, Single N-Channel, DPAK/IPAK Features Trench Technology Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices http://onsemi.com


    Original
    NTD4860N NTD4860N/D ntd4860n-1g PDF