369AC Search Results

369AC

Contextual Info: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS 3 IPAK, STRAIGHT LEAD CASE 369AC−01 ISSUE O DATE 08 FEB 2005 SCALE 1:1 B V C E R A SEATING PLANE K W F J G H D 3 PL 0.13 0.005 W NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH.

13nhg

Abstract: 48 13nhg mosfet 48 13nhg 4813nhg 4813NH 13nhg mosfet 369D NTD4813NH NTD4813NHT4G
Contextual Info: NTD4813NH Power MOSFET 30 V, 40 A, Single N−Channel, DPAK/IPAK Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Low RG These are Pb−Free Devices

369D

Abstract: NTD4857N NTD4857N-1G NTD4857N-35G NTD4857NT4G 369AC
Contextual Info: NTD4857N Power MOSFET 25 V, 78 A, Single N-Channel, DPAK/IPAK Features Trench Technology Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices http://onsemi.com

mosfet 63ng

Abstract: MOSFET 48 63ng 49 63ng NTD4863N
Contextual Info: NTD4863N Power MOSFET 25 V, 49 A, Single N−Channel, DPAK/IPAK Features • • • • • Trench Technology Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices

60NG

Abstract: 4860ng 4860N NTD4860N Power MOSFET 369D NTD4860N
Contextual Info: NTD4860N Power MOSFET 25 V, 65 A, Single N-Channel, DPAK/IPAK Features Trench Technology Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices http://onsemi.com

48 08NG

Abstract: 4808ng 369D NTD4808N 08NG
Contextual Info: NTD4808N Power MOSFET 30 V, 63 A, Single N-Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices http://onsemi.com

369D

Abstract: NTD4970N NTD4970NT4G 70ng
Contextual Info: NTD4970N Advance Information Power MOSFET 30 V, 36 A, Single N−Channel, DPAK/IPAK Features Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Three Package Variations for Design Flexibility

369D

Abstract: NTD4815NH NTD4815NHT4G 15nhg
Contextual Info: NTD4815NH Power MOSFET 30 V, 35 A, Single N−Channel, DPAK/IPAK Features Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Low RG These are Pb−Free Devices http://onsemi.com

N03G

Abstract: nc555 nc 555 65N03 369D NTD65N03R NTD65N03RG NTD65N03RT4 NTD65N03RT4G
Contextual Info: NTD65N03R Power MOSFET 25 V, 65 A, Single N−Channel, DPAK Features • • • • Low RDS on Ultra Low Gate Charge Low Reverse Recovery Charge Pb−Free Packages are Available http://onsemi.com V(BR)DSS RDS(on) TYP Applications • Desktop CPU Power • DC−DC Converters

48 13ng mosfet

Abstract: 369C 369D NTD4813N NTD4813NT4G TF 241
Contextual Info: NTD4813N Power MOSFET 30 V, 40 A, Single N−Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com

04NG

Abstract: 48 04NG 369D NTD4804N NTD4804NT4G 4804NG WA117
Contextual Info: NTD4804N Power MOSFET 30 V, 117 A, Single N−Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com

56NG mosfet

Abstract: 48 56NG 56NG 4856N 4856ng 369D
Contextual Info: NTD4856N Power MOSFET 25 V, 89 A, Single N-Channel, DPAK/IPAK Features •ăTrench Technology •ăLow RDS on to Minimize Conduction Losses •ăLow Capacitance to Minimize Driver Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăThese are Pb-Free Devices

55NG

Abstract: 4855ng 4855n NTD4855NT4G NTD4855N-1G NTD4855N-35G 369D
Contextual Info: NTD4855N Power MOSFET 25 V, 98 A, Single N-Channel, DPAK/IPAK Features •ăTrench Technology •ăLow RDS on to Minimize Conduction Losses •ăLow Capacitance to Minimize Driver Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăThese are Pb-Free Devices

4805ng

Abstract: 369D NTD4805N
Contextual Info: NTD4805N Power MOSFET 30 V, 88 A, Single N-Channel, DPAK/IPAK Features •ăLow RDS on to Minimize Conduction Losses •ăLow Capacitance to Minimize Driver Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăThese are Pb-Free Devices http://onsemi.com

4810NG

Contextual Info: NTD4810N Power MOSFET 30 V, 54 A, Single N−Channel, DPAK/IPAK Features Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com V(BR)DSS

48 13ng mosfet

Abstract: NTD4813N
Contextual Info: NTD4813N Power MOSFET 30 V, 40 A, Single N−Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com

08NG

Contextual Info: NTD4808N Power MOSFET 30 V, 63 A, Single N−Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com

4810NG

Abstract: 4810N
Contextual Info: NTD4810N Power MOSFET 30 V, 54 A, Single N-Channel, DPAK/IPAK Features •ăLow RDS on to Minimize Conduction Losses •ăLow Capacitance to Minimize Driver Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăThese are Pb-Free Devices http://onsemi.com

50N03

Contextual Info: NTD50N03R Power MOSFET 25 V, 45 A, Single N−Channel, DPAK Features • • • • • Planar Technology Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Pb−Free Packages are Available

Contextual Info: NTD4913N Power MOSFET 30 V, 32 A, Single N−Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com

N03RG

Abstract: 78N03 NTD78N03RG NTD78N03RT4 NTD78N03RT4G 369D NTD78N03R 78n03r NTD78N03
Contextual Info: NTD78N03R Power MOSFET 25 V, 85 A, Single N−Channel, DPAK Features • Low RDS on to Minimize Conduction Losses • Optimized Gate Charge to Minimize Switching Losses • Pb−Free Packages are Available http://onsemi.com Applications V(BR)DSS • VCORE Applications

50N03

Contextual Info: NTD50N03R Power MOSFET 25 V, 45 A, Single N−Channel, DPAK Features • • • • • Planar Technology Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Pb−Free Packages are Available

4860ng

Abstract: 60NG 369D NTD4860N
Contextual Info: NTD4860N Power MOSFET 25 V, 65 A, Single N-Channel, DPAK/IPAK Features •ăTrench Technology •ăLow RDS on to Minimize Conduction Losses •ăLow Capacitance to Minimize Driver Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăThese are Pb-Free Devices

4808ng

Abstract: 08NG
Contextual Info: NTD4808N Power MOSFET 30 V, 63 A, Single N−Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com