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YAGEO Corporation CC0805JRNPO0BN101 Multilayer Ceramic Capacitors MLCC - SMD/SMT 100V 100pF C0G 0805 5%
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI	CC0805JRNPO0BN101	Reel	300,000		4,000	1 - 10 - 100 - 1000 - 10000 $0.02	Buy Now
TAIYO YUDEN UMK212BBJ475KG-T Multilayer Ceramic Capacitors MLCC - SMD/SMT PLEASE SEE SUGGESTED ALTERNATE MSASU21GBB5475KTNA01
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI	UMK212BBJ475KG-T	Reel	24,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.11	Buy Now
Vishay Intertechnologies TNPW040228K7BEED Thin Film Resistors - SMD 28.7Kohm .1% 25ppm
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI	TNPW040228K7BEED	Reel	10,000		10,000	1 - 10 - 100 - 1000 - 10000 $0.10	Buy Now
TDK Corporation C3216X7R2J682K115AA Multilayer Ceramic Capacitors MLCC - SMD/SMT SUGGESTED ALTERNATE 810-C3216C0G2J682J1A
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI	C3216X7R2J682K115AA	Reel	8,000		2,000	1 - 10 - 100 - 1000 - 10000 $0.08	Buy Now
TAIYO YUDEN TMK316AB7106KLHT Multilayer Ceramic Capacitors MLCC - SMD/SMT PLEASE SEE SUGGESTED ALTERNATE MCAST31LAB7106KTNA01
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI	TMK316AB7106KLHT	Reel			2,000	1 - 10 - 100 - 1000 - 10000 $0.10	Buy Now

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4856N Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
56NG mosfet Abstract: 48 56NG 56NG 4856N 4856ng 369D Contextual Info: 4856N Power MOSFET 25 V, 89 A, Single N-Channel, DPAK/IPAK Features •ăTrench Technology •ăLow RDS on to Minimize Conduction Losses •ăLow Capacitance to Minimize Driver Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăThese are Pb-Free Devices	Original	ntd4856n ntd4856n/d 56ng mosfet 48 56ng +456ng 4856n 4856ng 369d	PDF
4856ng Abstract: NTD4856NT4G Contextual Info: 4856N, 4856N Power MOSFET 25 V, 89 A, Single N−Channel, DPAK/IPAK Features • • • • • • Trench Technology Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses	Original	ntd4856n nvd4856n aec-q101 ntd4856n/d +24856ng ntd4856nt4g	PDF
56NG mosfet Contextual Info: 4856N, 4856N Power MOSFET 25 V, 89 A, Single N−Channel, DPAK/IPAK Features • • • • • • Trench Technology Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses	Original	ntd4856n nvd4856n ntd4856n/d 56ng mosfet	PDF
56NG mosfet Abstract: 4856ng NTD4856N-1G 369D 4856N NTD4856NT4G Contextual Info: 4856N Power MOSFET 25 V, 89 A, Single N-Channel, DPAK/IPAK Features Trench Technology Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices http://onsemi.com	Original	ntd4856n ntd4856n/d 56ng mosfet 4856ng +4ntd4856n-1g 369d 4856n ntd4856nt4g	PDF
Contextual Info: 4856N, 4856N Power MOSFET 25 V, 89 A, Single N−Channel, DPAK/IPAK Features • • • • • • Trench Technology Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses	Original	ntd4856n nvd4856n ntd4856n/d	PDF