56NG Search Results

DS1304

Abstract: aem r10k SMP3316-103M ds1303 renco 4r7 SMTDR54-120M smtdr75 SMTDR75-680K SMTDR75-221K MLF1608A1R0KT
Contextual Info: Bourns P/N CI100505-1N0D CI100505-1N2D CI100505-1N5D CI100505-1N8D CI100505-2N2D CI100505-2N7D CI100505-3N3D CI100505-3N9D CI100505-4N7D CI100505-5N6D CI100505-6N8J CI100505-8N2J CI100505-10NJ CI100505-12NJ CI100505-15NJ CI100505-18NJ CI100505-22NJ CI100505-27NJ

56NG mosfet

Abstract: 48 56NG 56NG 4856N 4856ng 369D
Contextual Info: NTD4856N Power MOSFET 25 V, 89 A, Single N-Channel, DPAK/IPAK Features •ăTrench Technology •ăLow RDS on to Minimize Conduction Losses •ăLow Capacitance to Minimize Driver Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăThese are Pb-Free Devices

LMC 84

Abstract: 1n5j 20NG 095 K3639 1n0j 100 042 LMC 40R12 3N9G 10NG 20NG
Contextual Info: CERAMIC CHIP INDUCTORS •FEATURES ABCO chip inductor is wire wound type ceramic Inductor. And our product provide high Q value. So ABCO chip inductor can be SRF self resonant frequency industry. This can often eliminate the need for variable components in tunner circuits

4856ng

Abstract: NTD4856NT4G
Contextual Info: NTD4856N, NVD4856N Power MOSFET 25 V, 89 A, Single N−Channel, DPAK/IPAK Features • • • • • • Trench Technology Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses

56NG mosfet

Contextual Info: NTD4856N, NVD4856N Power MOSFET 25 V, 89 A, Single N−Channel, DPAK/IPAK Features • • • • • • Trench Technology Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses

Contextual Info: 高周波積層チップインダクタ MULTILAYER CHIP INDUCTOR FOR HIGH FREQUENCY HK SERIES 0603D｜55V125C 1005D｜55V125C＊ OPERATING TEMP. ｜55V85C＊ 1608D｜40V85C ＊保証定格により変わります。 ＊Operating temperature depends on rated current.

51536

Abstract: smd 1C 56NG
Contextual Info: 1. D i m e n s i o n s : 2. S c h e m a t i c : A - — 0 .0 9 Max — - o f B D.D68 Max Brown L o- ' 3. Electrical Specs: D F 0.020 C OCL: 5 6 n H ± 2 % 0.060 Max @ 200M Hz 0.1V DCR: 0 .3 4 O hm s Max L DC C u rre n t: 5 0 0 m A d c Max Q: B0 Min @ 500MHz

56NG mosfet

Abstract: 4856ng NTD4856N-1G 369D 4856N NTD4856NT4G
Contextual Info: NTD4856N Power MOSFET 25 V, 89 A, Single N-Channel, DPAK/IPAK Features Trench Technology Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices http://onsemi.com

18M5L

Abstract: 3N3S 30E K03
Contextual Info: 高周波積層チップインダクタ MULTILAYER CHIP INDUCTOR FOR HIGH FREQUENCY HK SERIES 0603D｜55V125C 1005D｜55V125C＊ OPERATING TEMP. ｜55V85C＊ 1608D｜40V85C ＊保証定格により変わります。 ＊Operating temperature depends on rated current.

47nj capacitor

Abstract: capacitor 33nj capacitor 10nj 101j Capacitor capacitor 330j 6N8J 6N8J capacitor 33nj CAPACITOR 270j capacitor S603W
Contextual Info: RF Ceramic Component Proto-Typing Kits Johanson Technology’s engineering prototype kits provide RF designers with a broad selection of high frequency ceramic components. Each kit contains a selection of components as well as a CD-ROM containing modeling software and the latest

Contextual Info: NTD4856N, NVD4856N Power MOSFET 25 V, 89 A, Single N−Channel, DPAK/IPAK Features • • • • • • Trench Technology Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses

HK212539NJ

Contextual Info: 高周波積層チップインダクタ MULTILAYER CHIP INDUCTOR FOR HIGH FREQUENCY HK SERIES 0603D｜55V125C 1005D｜55V125C＊ OPERATING TEMP. ｜55V85C＊ 1608D｜40V85C ＊保証定格により変わります。 ＊Operating temperature depends on rated current.