369C Search Results

Contextual Info: TE X AS I NS TRUM E NTS - P RO DUCTION D ATA Tiva TM4C123BH6PZ Microcontroller D ATA SHE E T D S -T M 4C 123BH6 P Z - 1 5 5 5 3 . 2 7 0 0 S P M S 369C C o p yri g h t 2 0 07-2013 Te xa s In stru me n ts In co rporated Copyright Copyright © 2007-2013 Texas Instruments Incorporated. Tiva and TivaWare are trademarks of Texas Instruments Incorporated. ARM and Thumb are

Contextual Info: TE X AS I NS TRUM E NTS - P RO DUCTION D ATA Tiva TM4C123BH6PZ Microcontroller D ATA SHE E T D S -T M 4C 123BH6 P Z - 1 5 5 5 3 . 2 7 0 0 S P M S 369C C o p yri g h t 2 0 07-2013 Te xa s In stru me n ts In co rporated Copyright Copyright © 2007-2013 Texas Instruments Incorporated. Tiva and TivaWare are trademarks of Texas Instruments Incorporated. ARM and Thumb are

On semiconductor date Code dpak YEAR A

Contextual Info: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DPAK SINGLE GAUGE CASE 369C ISSUE O 4 DATE 24 SEP 2001 1 2 3 SCALE 1:1 C B V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. SEATING PLANE -T- E R 4 Z A S 1 2 3 U K

Contextual Info: 11111112345678569A99991 BCDEF111 111111111111111111111D119555891 9 1234567892A4B2337C8DEF833542B8 8 9 9 9 B 31 !"39A#$ %9&C5E'39C 56C3 9 19*4BE5C69+&1*,9B9E9838-369C.9 123456789AB46CDEF39A#$936B39C.9"B'"9

369C-01

Abstract: On semiconductor date Code dpak YEAR A 98AON10527D
Contextual Info: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DPAK SINGLE GAUGE CASE 369C−01 ISSUE D 4 1 2 DATE 29 JUN 2010 3 SCALE 1:1 A E b3 A c2 B 4 L3 Z D 1 L4 C b2 2 3 c b 0.005 (0.13) e H DETAIL A M H C GAUGE PLANE L2 C L L1 DETAIL A SEATING PLANE A1 ROTATED 905 CW

1C31EG

Abstract: 617 300
Contextual Info: NSS1C301ET4G 100 V, 3.0 A, Low VCE sat NPN Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications where

931A5G

Abstract: 2931g 2931AT-5 2931T 2931at LM2931CT D2PAK NCV2931A-5 LM2931A-5 dpak 369C 2931D2T
Contextual Info: LM2931, NCV2931 Series 100 mA, Adjustable Output, LDO Voltage Regulator with 60 V Load Dump Protection The LM2931 series consists of positive fixed and adjustable output voltage regulators that are specifically designed to maintain proper regulation with an extremely low input−to−output voltage differential.

A 673 C2 transistor

Abstract: tip41 369D-01
Contextual Info: MJD41C, NJVMJD41CT4G NPN , MJD42C, NJVMJD42CT4G, NJVMJD42CRLG (PNP) Complementary Power Transistors http://onsemi.com DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. SILICON POWER TRANSISTORS

SMD L4 Regulator SOT-223

Abstract: smd CODE 95 SOT-223 NCV4274ADS33R4G NCV4274AST33T3G 8 lead sot-223 60S sot223 418af NCV4274DT33RKG
Contextual Info: NCV4274, NCV4274A 400 mA 2% and 4%Voltage Regulator Family Description The NCV4274 and NCV4274A is a precision micro−power voltage regulator with an output current capability of 400 mA available in the DPAK, D2PAK and SOT−223 packages. The output voltage is accurate within ±2.0% or ±4.0% depending on

35N04G

Abstract: schematic diagram electrical motor control
Contextual Info: NJD35N04G, NJVNJD35N04G, NJVNJD35N04T4G NPN Darlington Power Transistor This high voltage power Darlington has been specifically designed for inductive applications such as Electronic Ignition, Switching Regulators and Motor Control. Features • Exceptional Safe Operating Area

T20P06LG

Abstract: P06LG T20 P06LG 20p06 NTDV20P06L marking T20 NTDV20P06LT4G NTDV20 20P06L ntd20p06lg
Contextual Info: NTD20P06L, NTDV20P06L Power MOSFET −60 V, −15.5 A, Single P−Channel, DPAK Features • • • • Withstands High Energy in Avalanche and Commutation Modes Low Gate Charge for Fast Switching AEC Q101 Qualified − NTDV20P06L These Devices are Pb−Free and are RoHS Compliant

NJVMJD47T4G

Contextual Info: MJD47, NJVMJD47T4G, MJD50 High Voltage Power Transistors DPAK For Surface Mount Applications Designed for line operated audio output amplifier, switchmode supply drivers and other switching applications. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves

350AG

Abstract: NSI50350 NSI50350ADT4G NSI50350AD NSI50350ast NSI350A CONSTANT CURRENT regulator
Contextual Info: NSI50350ADT4G Constant Current Regulator & LED Driver 50 V, 350 mA + 10%, 11 W Package The linear constant current regulator CCR is a simple, economical and robust device designed to provide a cost−effective solution for regulating current in LEDs. The CCR is based on Self-Biased

MJD122

Abstract: TIP125-TIP127 mjd122g
Contextual Info: MJD122, NJVMJD122T4G NPN , MJD127 (PNP) Complementary Darlington Power Transistor DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features http://onsemi.com SILICON POWER TRANSISTOR 8 AMPERES

g18n40

Abstract: NGD18N40CLBT4G 350VVGE NGD18N40A Direct fuel injection
Contextual Info: NGD18N40CLB, NGD18N40ACLB Ignition IGBT, 18 A, 400 V N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over−Voltage clamped protection for use in inductive coil drivers applications. Primary uses

MJD350t4g

Contextual Info: MJD340, NJVMJD340T4G NPN , MJD350, NJVMJD350T4G (PNP) High Voltage Power Transistors http://onsemi.com DPAK For Surface Mount Applications Designed for line operated audio output amplifier, switchmode power supply drivers and other switching applications.

b10 45g

Abstract: ON B10 45G 940 b10 45g b1045g SBRD81045 MBRD1045G 838 b10 45g SBRD81045T4G B1045 SBRB1045T4G
Contextual Info: MBRB1045G, MBRD1045G, SBRB1045G, SBRD81045T4G Preferred Device SWITCHMODE Schottky Power Rectifier http://onsemi.com Surface Mount Power Package SCHOTTKY BARRIER RECTIFIER 10 AMPERES, 45 VOLTS This series of Power Rectifiers employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art

N3LG

Abstract: SPICE QT 60 CIRCUIT DIAGRAMS 20N3L MTD20N03L NVD20N03L27 20n3 20N3LG
Contextual Info: NTD20N03L27, NVD20N03L27 Power MOSFET 20 Amps, 30 Volts, N−Channel DPAK This logic level vertical power MOSFET is a general purpose part that provides the “best of design” available today in a low cost power package. Avalanche energy issues make this part an ideal design in.

MURD550PFG

Abstract: NRVUD550 NRVUD550PF NRVUD550PFT4G
Contextual Info: MUR550APFG, MURD550PFG, MUR550PFG, MURF550PFG, NRVUD550PFT4G SWITCHMODE Power Rectifier http://onsemi.com ULTRAFAST RECTIFIER 5.0 AMPERES, 520 VOLTS These state−of−the−art devices are designed for power factor correction in discontinuous and critical conduction mode.

ci str 9656

Abstract: DSP56200 1311 srz cir 2262 af digital signal processing roman kuc manual so real time application and product for fir 102 m x1 y1 80386 programmers manual Motorola DSP56200 PT 2262 DATASHEET
Contextual Info: Freescale Semiconductor, Inc. Freescale Semiconductor, Inc. DSP56100 16-BIT DIGITAL SIGNAL PROCESSOR FAMILY MANUAL Motorola, Inc. Semiconductor Products Sector DSP Division 6501 William Cannon Drive, West Austin, Texas 78735-8598 For More Information On This Product,

3055V

Abstract: MTD3055VT4 MTD3055V 369D AN569
Contextual Info: MTD3055V Preferred Device Power MOSFET 12 Amps, 60 Volts N−Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power

NSS1C300ET4G

Abstract: NSS1C300E
Contextual Info: NSS1C300ET4G 100 V, 3.0 A, Low VCE sat PNP Transistor ON Semiconductor’s e 2 PowerEdge family of low V CE(sat) transistors are surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications where

U320G

Abstract: 320G MURD320 MURD320T4 MURD320T4G
Contextual Info: MURD320 SWITCHMODE Power Rectifier DPAK Surface Mount Package http://onsemi.com These state−of−the−art devices are designed for use in switching power supplies, inverters and as free wheeling diodes. ULTRAFAST RECTIFIER 3.0 AMPERES, 200 VOLTS Features

835L

Abstract: MBRD835L 835L B MBRD835LG MBRD835LT4 MBRD835LT4G B 835L b835l D-PAK package
Contextual Info: MBRD835L Preferred Device SWITCHMODE] Power Rectifier DPAK Surface Mount Package http://onsemi.com This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in