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    20P06 Search Results

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    Renesas Electronics Corporation NP20P06SLG-E1-AY

    MOSFET P-CH 60V 20A TO252
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    DigiKey () NP20P06SLG-E1-AY Digi-Reel 15,609 1
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    NP20P06SLG-E1-AY Reel 15,000 2,500
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    Mouser Electronics NP20P06SLG-E1-AY 1,056
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    Newark NP20P06SLG-E1-AY Cut Tape 1,725 1
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    Bristol Electronics NP20P06SLG-E1-AY 3,500
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    Chip One Stop NP20P06SLG-E1-AY Cut Tape 2,750 0 Weeks, 1 Days 1
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    Hirose Electric Co Ltd DF53-20P-0.6C

    Interconnect Rectangular
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    DigiKey DF53-20P-0.6C Bag 4,987 1
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    Interstate Connecting Components DF53-20P-0.6C 75
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    New Advantage Corporation DF53-20P-0.6C 4,000 1
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    Sager DF53-20P-0.6C 100
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    Diotec Semiconductor AG DI020P06PT

    MOSFET PWRQFN 3X3 -60V 0.045OHM
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    DigiKey () DI020P06PT Cut Tape 4,945 1
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    DI020P06PT Digi-Reel 4,945 1
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    Mouser Electronics DI020P06PT 5,000
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    Newark DI020P06PT Cut Tape 5,000 1
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    TME DI020P06PT 1
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    Renesas Electronics Corporation NP20P06YLG-E1-AY

    MOSFET P-CH 60V 20A 8HSON
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    DigiKey () NP20P06YLG-E1-AY Digi-Reel 4,512 1
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    NP20P06YLG-E1-AY Reel 2,500 2,500
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    Avnet Americas NP20P06YLG-E1-AY Reel 18 Weeks 2,500
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    Mouser Electronics NP20P06YLG-E1-AY 4,772
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    Avnet Silica NP20P06YLG-E1-AY 20 Weeks 2,500
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    Diotec Semiconductor AG DI020P06PT-AQ

    MOSFET, POWERQFN 3X3, -60V, -20A
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    DigiKey () DI020P06PT-AQ Digi-Reel 3,458 1
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    DI020P06PT-AQ Cut Tape 3,458 1
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    Newark DI020P06PT-AQ Cut Tape 2,000 1
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    TME DI020P06PT-AQ 1
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    Master Electronics DI020P06PT-AQ
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    20P06 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    T20P06LG

    Abstract: P06LG T20 P06LG 20p06 NTDV20P06L marking T20 NTDV20P06LT4G NTDV20 20P06L ntd20p06lg
    Contextual Info: 20P06L, 20P06L Power MOSFET −60 V, −15.5 A, Single P−Channel, DPAK Features • • • • Withstands High Energy in Avalanche and Commutation Modes Low Gate Charge for Fast Switching AEC Q101 Qualified − 20P06L These Devices are Pb−Free and are RoHS Compliant


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    NTD20P06L, NTDV20P06L NTD20P06L/D T20P06LG P06LG T20 P06LG 20p06 marking T20 NTDV20P06LT4G NTDV20 20P06L ntd20p06lg PDF

    20P06L

    Abstract: T20P06L 350 20P06L
    Contextual Info: 20P06L Power MOSFET −60 V, −15.5 A, Single P−Channel, DPAK Features • Withstands High Energy in Avalanche and Commutation Modes • Low Gate Charge for Fast Switching • Pb−Free Packages are Available Applications • Bridge Circuits • Power Supplies, Power Motor Controls


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    NTD20P06L 1E-02 1E-01 1E-03 NTD20P06L NTD20P06L-1 NTD20P06LT4 NTD20P06L-1G NTD20P06LG 20P06L T20P06L 350 20P06L PDF

    20p06H

    Contextual Info: nr ir DPAK DEVICES continued TMOS Power MOSFETs — N-Channel V(BR)DSS RDS(on) (Volts) Min (Ohms) Max @ TMOS Id b (Amps) (cont) Amps Device 50 0.10 5 M TD10N05E 10 30 0.035 10 M TD20N03HDL <2 > 20 TMOS PD<1> (Watts) Max I11 Tc - 25°C (2| Indicates Logic Level


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    TD10N05E TD20N03HDL TD6P10E TD5P06E MTD295SE 20P06H MTD20P03HDLW PDF

    20P06L

    Abstract: T20P06L 350 20P06L
    Contextual Info: 20P06L Power MOSFET 60 V, 15 A, Single P−Channel, DPAK Features • Withstands High Energy in Avalanche and Commutation Modes • Low Gate Charge for Fast Switching • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish


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    NTD20P06L NTD20P06L/D 20P06L T20P06L 350 20P06L PDF

    20P06L

    Abstract: NTD20P06LT4G 20P06 369D NTD20P06L NTD20P06LG NTD20P06LT4 NTD20P06L-1G 350 20P06L
    Contextual Info: 20P06L Power MOSFET 60 V, 15 A, Single P−Channel, DPAK Features • Withstands High Energy in Avalanche and Commutation Modes • Low Gate Charge for Fast Switching Applications • Bridge Circuits • Power Supplies, Power Motor Controls • DC−DC Conversion


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    NTD20P06L NTD20P06L/D 20P06L NTD20P06LT4G 20P06 369D NTD20P06L NTD20P06LG NTD20P06LT4 NTD20P06L-1G 350 20P06L PDF

    20p06hl

    Abstract: 20p06H AN569 MTD20P06HDL MTD20P06HDLT4 tl 173
    Contextual Info: 20P06HDL Preferred Device Power MOSFET 20 Amps, 60 Volts, Logic Level P–Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for


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    MTD20P06HDL r14525 MTD20P06HDL/D 20p06hl 20p06H AN569 MTD20P06HDL MTD20P06HDLT4 tl 173 PDF

    balancing resistors

    Abstract: LM2576 step up converter cell balancing 0.1u 50v charge balance converter 20p06hl AN2258 lm2576 current mode balancing thermistor 10k ohm
    Contextual Info: Application Note AN2258 Cell Balancing in a Multi-Cell Li-Ion/Li-Pol Battery Charger Author: Oleksandr Karpin Associated Project: Yes Associated Part Family: CY8C27xxx PSoC Designer Version: 4.2 Associated Application Notes: AN2107, AN2180 Abstract This Application Note describes cell-balancing technology for a multi-cell battery charger. Specific


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    AN2258 CY8C27xxx AN2107, AN2180 162nd balancing resistors LM2576 step up converter cell balancing 0.1u 50v charge balance converter 20p06hl AN2258 lm2576 current mode balancing thermistor 10k ohm PDF

    E3P102

    Abstract: T2-955V e6n02 t9n10e DL135 1086v l1n06c 24 v DC relay 34.51.7 d3n03 20n06hl
    Contextual Info: DL135/D Rev. 7, Apr-2001 Power MOSFETs Power MOSFETs DL135/D Rev. 7, Apr–2001  SCILLC, 2001 Previous Edition  1996 “All Rights Reserved” EZFET, MiniMOS & SMARTDISCRETES are trademarks of Semiconductor Components Industries, LLC SCILLC . ChipFET is a trademark of Vishay Siliconix.


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    DL135/D Apr-2001 r14525 DLD601 E3P102 T2-955V e6n02 t9n10e DL135 1086v l1n06c 24 v DC relay 34.51.7 d3n03 20n06hl PDF

    20P06

    Abstract: YLE relay relay yle TP20P06 mtp20p MC14001 motorola 20p
    Contextual Info: 6367254 MOTOROLA 96D X S T R S /R F SC Tb MOTOROLA D E p b 3h 7E S 4 r- 29~ ^ j 80096 ÜGßGCHb Order this data sheet by 20P06/D (□ SEMICONDUCTOR TECHNICAL DATA M T M 20P 06 M 20P06 Designer's Data Sheet P o w e r Field E ffe ct T ra n sisto r P-Channel Enhancem ent-M ode


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    MTM20P06/D TP20P06 MK145BP, DS-3782 C50651 MTM20P06 MTP20P06 20P06 YLE relay relay yle TP20P06 mtp20p MC14001 motorola 20p PDF

    20p03

    Abstract: 20P06 passive delay line
    Contextual Info: Yuan Dean Scientific CO.,LTD 7 PIN SINGLE-IN-LINE PASSIVE DELAY LINE FEATURES 20P SERIES •7-PIN SIP PACKAGE. •5EQUALLY-SPACED TAPS. •OPERATING TEMPERATURE RANGE:0℃ TO +70℃ •LOW OUTPUT DISTORTION:±10%. •TOTAL DELAYS FROM5-100Ns


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    FROM5-100Ns 100nS 100ppm/ 20P-005XX 20-030XX 20P-040XX 20P-050XX 20P-060XX 20P-070XX 20P-080XX 20p03 20P06 passive delay line PDF

    20p06hl

    Abstract: 20P06HLG 06HLG ultra low igss MTD20P06HDLT4G d marking code dpak transistor MOSFET dynamic parameters mosfet j 114 P channel Junction FET AN569
    Contextual Info: 20P06HDL Preferred Device Power MOSFET 20 Amps, 60 Volts, Logic Level P−Channel DPAK http://onsemi.com This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for


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    MTD20P06HDL MTD20P06HDL/D 20p06hl 20P06HLG 06HLG ultra low igss MTD20P06HDLT4G d marking code dpak transistor MOSFET dynamic parameters mosfet j 114 P channel Junction FET AN569 PDF

    20P06

    Abstract: 20P06L 369D NTD20P06L NTD20P06LG NTD20P06LT4 NTD20P06LT4G
    Contextual Info: 20P06L Power MOSFET −60 V, −15.5 A, Single P−Channel, DPAK Features • Withstands High Energy in Avalanche and Commutation Modes • Low Gate Charge for Fast Switching • Pb−Free Packages are Available Applications • Bridge Circuits • Power Supplies, Power Motor Controls


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    NTD20P06L NTD20P06L/D 20P06 20P06L 369D NTD20P06L NTD20P06LG NTD20P06LT4 NTD20P06LT4G PDF

    20P06

    Abstract: MTP20P06 ROS 480 AN569 MTM20P06 diode RJ
    Contextual Info: Order this data sheet by 20P06/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA M TM 20P 06 M 20P06 Designer's Data Sheet Pow er Field Effect Transistor P-Channel Enhancem ent-Mode Silico n Gate T M O S TMOS POWER FETs 20 AMPERES rDS on = 0.2 OHM 60 VOLTS These TM O S Power FETs are designed for high speed power


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    MTM20P06/D MTM20P06 MTP20P06 DS-3782' MTM20P06/D 20P06 MTP20P06 ROS 480 AN569 diode RJ PDF

    1117 L

    Abstract: 1117 S tsop 17
    Contextual Info: TSOp '° 6 16- o.so U>n¡t TSO PI 2 4 /20-P-0616-0.50 Unit : mm 0.5±0.1


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    24/20-P-0616-0 1117 L 1117 S tsop 17 PDF

    20P06L

    Abstract: 20P06 DD 127 D transistor dd 127 dd 127 d NTD20P06LG MARKING QG 6 PIN 369D NTD20P06L NTD20P06LT4 NTD20P06LT4G
    Contextual Info: 20P06L Power MOSFET 60 V, 15 A, Single P−Channel, DPAK Features • Withstands High Energy in Avalanche and Commutation Modes • Low Gate Charge for Fast Switching • Pb−Free Packages are Available Applications • Bridge Circuits • Power Supplies, Power Motor Controls


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    NTD20P06L NTD20P06L/D 20P06L 20P06 DD 127 D transistor dd 127 dd 127 d NTD20P06LG MARKING QG 6 PIN 369D NTD20P06L NTD20P06LT4 NTD20P06LT4G PDF

    P06LG

    Abstract: T20P06LG T20 P06LG 20P06L 369D NTD20P06L NTD20P06LG NTD20P06LT4G
    Contextual Info: 20P06L Power MOSFET −60 V, −15.5 A, Single P−Channel, DPAK Features • Withstands High Energy in Avalanche and Commutation Modes • Low Gate Charge for Fast Switching • These are Pb−Free Devices Applications • Bridge Circuits • Power Supplies, Power Motor Controls


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    NTD20P06L NTD20P06L/D P06LG T20P06LG T20 P06LG 20P06L 369D NTD20P06L NTD20P06LG NTD20P06LT4G PDF

    ksd 302 250v, 10a

    Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
    Contextual Info: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle


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    CB-F36c 2SD1642 2SD2182, 2SC4489, -08S- ksd 302 250v, 10a irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643 PDF

    20p06hl

    Abstract: 20p 06hl 120 20 06hl Power MOSFET 12 Amps, 60 Volts p-Channel dpak 369C 20p-06hl AN569 MTD20P06HDL MTD20P06HDLT4 20p06H
    Contextual Info: 20P06HDL Preferred Device Power MOSFET 20 Amps, 60 Volts, Logic Level P−Channel DPAK http://onsemi.com This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for


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    MTD20P06HDL MTD20P06HDL/D 20p06hl 20p 06hl 120 20 06hl Power MOSFET 12 Amps, 60 Volts p-Channel dpak 369C 20p-06hl AN569 MTD20P06HDL MTD20P06HDLT4 20p06H PDF

    T20 P06LG

    Contextual Info: 20P06L, 20P06L Power MOSFET −60 V, −15.5 A, Single P−Channel, DPAK Features • • • • Withstands High Energy in Avalanche and Commutation Modes Low Gate Charge for Fast Switching AEC Q101 Qualified − 20P06L These Devices are Pb−Free and are RoHS Compliant


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    NTD20P06L, NTDV20P06L NTD20P06L/D T20 P06LG PDF