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Siemens 3VA52955ED310AA0 Circuit Breakers BRKR 3VA52 3P 15A 35KA FTFM
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Mouser Electronics	3VA52955ED310AA0					1 $1305.82 10 $1305.82 100 $1305.82 1000 $1305.82 10000 $1305.82	Get Quote
Siemens 3VA52955ED360AA0 Circuit Breakers BRKR 3VA52 3P 15A 35KA FTFM AL
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Mouser Electronics	3VA52955ED360AA0					1 $1328.04 10 $1328.04 100 $1328.04 1000 $1328.04 10000 $1328.04	Get Quote
Siemens 3VA52955ED320AA0 Circuit Breakers BRKR 3VA52 3P 15A 35KA FTFM NUT
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Mouser Electronics	3VA52955ED320AA0					1 $1329.84 10 $1329.84 100 $1329.84 1000 $1329.84 10000 $1329.84	Get Quote
Siemens 3VA52955ED311AA0 Circuit Breakers BRKR 3VA52 3P 15A 35KA FTFM NAV
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Mouser Electronics	3VA52955ED311AA0					1 $1344.85 10 $1344.85 100 $1344.85 1000 $1344.85 10000 $1344.85	Get Quote
Siemens 3VA52955ED361AA0 Circuit Breakers BRKR 3VA52 3P 15A 35KA FTFM NAV AL
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Mouser Electronics	3VA52955ED361AA0					1 $1362.26 10 $1362.26 100 $1362.26 1000 $1362.26 10000 $1362.26	Get Quote

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2955E Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
P2955E Abstract: 2955E TP2955E TP2955 sped sipa Contextual Info: MOTOROLA Orctor Ms document SEMICONDUCTOR TECHNICAL DATA by 2955E/D Designer's Data Sheet M T P 2955E TM O S E-FET™ P o w er Field E ffe c t Transistor M otorola P rila rrtd Daylca P-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 12 AMPERES	OCR Scan	mtp2955e/d 8s036 mtp2955bd p2955e +52955e tp2955e tp2955 sped sipa	PDF
2955E Abstract: AN569 MMFT2955E MMFT2955ET1 MMFT2955ET3 Contextual Info: 2955E Preferred Device Power MOSFET 1 Amp, 60 Volts P–Channel SOT–223 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient device also offers a drain–to–source diode with a fast recovery time.	Original	mmft2955e r14525 mmft2955e/d 2955e +3an569 mmft2955et1 mmft2955et3	PDF
2955E Abstract: MTA2955E Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet 2955E Fully Isolated TMOS E-FET 1TM Pow er Field E ffect Transistor Motorola Preferred Device P-Channel Enhancement-Mode Isolated T0-220 TMOS POWER FET 7.0 AMPERES 60 VOLTS RDS on = 0.30 OHM	OCR Scan	t0-220 o-220 b3b7254 2955e +2b3b7554 mta2955e	PDF
25CC Abstract: 369A-10 AN569 MTD2955E MTD2955E-1 ims 200 MTD2955E1 Contextual Info: MOTOROLA SC XSTRS/R F b ftE b3b?254 D DCnfl53Q ôST • MOTOROLA ■ SEMICONDUCTOR TECHNICAL DATA 2955E Designer's Data Sheet P o w e r Field E ffe c t T ra n sisto r M o to ro la Preferred Device P-Channel Enhancem ent-M ode Silico n Gate D P A K for Surface M o u n t or	OCR Scan	g01fls30 25cc 369a-10 an569 +4mtd2955e mtd2955e-1 ims 200 mtd2955e1	PDF
E3P102 Abstract: T2-955V e6n02 t9n10e DL135 1086v l1n06c 24 v DC relay 34.51.7 d3n03 20n06hl Contextual Info: DL135/D Rev. 7, Apr-2001 Power MOSFETs Power MOSFETs DL135/D Rev. 7, Apr–2001  SCILLC, 2001 Previous Edition  1996 “All Rights Reserved” EZFET, MiniMOS & SMARTDISCRETES are trademarks of Semiconductor Components Industries, LLC SCILLC . ChipFET is a trademark of Vishay Siliconix.	Original	dl135/d apr-2001 r14525 dld601 +10e3p102 t2-955v e6n02 t9n10e dl135 1086v l1n06c 24 v dc relay 34.51.7 d3n03 20n06hl	PDF
zt751 Abstract: 3055L 2955E 3055e SP19A zta96 2N02L marking 651 sot223 Contextual Info: SOT-223 DEVICES continued Plastic-Encapsulated High-Voltage Transistors Pinout: 1-Base, 2-Collector, 3-Emitter, 4-Collector h hFE Device Marking V (BR)CEO Min SP19A P1D BF720 SP20A 350 300 250 250 40 40 50 40 ZTA96 P2D BSP16 BF721 450 300 300 250 50 40 30	OCR Scan	ot-223 bsp19at1 pzta42t1 bf720t1 +13bsp20at1 sp19a bf720 sp20a pzta98t1 pzta92t1 zt751 3055l 2955e 3055e zta96 2n02l marking 651 sot223	PDF
2955E Abstract: TD 1409 Contextual Info: 2955E Preferred Device Power MOSFET 1 Amp, 60 Volts P–Channel SOT–223 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient device also offers a drain–to–source diode with a fast recovery time.	Original	mmft2955e 2955e td 1409	PDF
2955E Abstract: equivalent transistor 2955e microdot assembly instructions AN569 MMFT2955E MMFT2955ET1 MMFT2955ET1G MMFT2955ET3 Contextual Info: 2955E Preferred Device Power MOSFET 1 Amp, 60 Volts P−Channel SOT−223 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient device also offers a drain−to−source diode with a fast recovery time.	Original	mmft2955e ot-223 mmft2955e/d 2955e +6equivalent transistor 2955e microdot assembly instructions an569 mmft2955et1 mmft2955et1g mmft2955et3	PDF
2955e Abstract: equivalent transistor 2955e dc motor forward reverse control c source code motor speed circuit motor forward reverse control Power MOSFET 12 Amps, 60 Volts p-Channel h 2n3904 MARKING QG 6 PIN PWM techniques to-261 Contextual Info: 2955E Preferred Device Power MOSFET 1 Amp, 60 Volts P−Channel SOT−223 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient device also offers a drain−to−source diode with a fast recovery time.	Original	mmft2955e ot-223 mmft2955e/d 2955e +9equivalent transistor 2955e dc motor forward reverse control c source code motor speed circuit motor forward reverse control power mosfet 12 amps, 60 volts p-channel h 2n3904 marking qg 6 pin pwm techniques to-261	PDF