BSP16 Search Results

BSP16T1

Abstract: SMD310
Contextual Info: ON Semiconductort BSP16T1 SOT-223 Package High Voltage Transistor ON Semiconductor Preferred Device PNP Silicon SOT–223 PACKAGE PNP SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO –300

brd8011

Abstract: BSP16T1G
Contextual Info: BSP16T1G High Voltage Transistors PNP Silicon Features • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO -300 Vdc Collector-Base Voltage VCBO

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BSP16T1 SOT-223 Package High Voltage Transistor PNP Silicon Motorola Preferred Device COLLECTOR 2,4 SO T-223 PA C K A G E P N P SILICON HIGH VO LTAGE TRANSISTOR S U R F A C E MOUNT EMITTER 3 MAXIMUM RATINGS Sym bol Value

Contextual Info: SOT223 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 3 - AUGUST 1995 _ FEATURES vCE0 * H igh * L o w s a tu ra tio n vo lta g e CO M PLEM ENTAR Y TYPE: -B S P 1 9 PAR TM ARKING DETAIL: - BSP16 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT C o lle c to r-B a s e V o lta g e

Contextual Info: SOT223 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 3 - FEBRUARY 1996_ FEATURES * High V CE0- 350V * Low saturation voltage C O M PLEM EN TA RY T Y P E - BSP16 PARTMARKING D E T A IL - BSP19 ABSOLUTE MAXIMUM RATINGS. SYM BO L PARAM ETER

Contextual Info: BSP16T1* M A XIM U M R ATINGS Symbol Value Unit Collector-Emitter Voltage VCEO -3 0 0 Vdc Collector-Base Voltage v CBO -3 5 0 Vdc Vdc Rating V e BO -6 .0 Collector Current >C - 1000 mAdc Base Current *B -5 0 0 mAdc PD* 1.5 Watts Tstg - 6 5 t o +150 °C Tj

Sc59

Abstract: marking H2A sot-23
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BSP16T1 SOT-223 Package High Voltage Transistor PNP Silicon Motorola Preferred Device COLLECTOR 2,4 SOT–223 PACKAGE PNP SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT BASE 1 EMITTER 3 4 MAXIMUM RATINGS 1 Rating Symbol

BSP16

Contextual Info: Philips Semiconductors Product specification PNP high-voltage transistors BSP15; BSP16 FEATURES PINNING • High voltage max. 350 V . PIN 1 APPLICATIONS 2, 4 • Switching and amplification 3 DESCRIPTION base collector emitter • Especially used in telephony and automotive

Contextual Info: BSP16 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)300 V(BR)CBO (V)350 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)1.5 Maximum Operating Temp (øC)140õ I(CBO) Max. (A)1.0uØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: Transistors SMD Type Product specification BSP16 SOT-223 Unit: mm +0.2 3.50-0.2 6.50 Features +0.1 3.00-0.1 High voltage max. 350 V . +0.15 1.65-0.15 0.1max +0.05 0.90-0.05 +0.2 -0.2 +0.2 0.90-0.2 +0.3 7.00-0.3 4 1 Base 1 2 Collector 3 2 +0.1 0.70-0.1 2.9

Contextual Info: bbS3T31 DDESMSb DM5 H A P X N AMER PHILIPS/D ISCR ETE BSP15 BSP16 b?E D _ SILICON PLANAR EPITAXIAL TRANSISTORS PNP transistors in miniature plastic envelopes intended fo r use in amplifier and switching applications. Complementary types are BSP19/20.

marking Bt2

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BSP16T1 SOT-223 Package High Voltage Transistor Motorola Preferred Device PNP Silicon COLLECTOR 2,4 SOT-223 PACKAGE PNP SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT EMITTER 3 MAXIMUM RATINGS 2 Rating Symbol Value Unit

BSP15

Abstract: BSP19 tic 223 BSP16
Contextual Info: • bbS3T31 0D 25 45 b D4S H A P X | BSP15 b?E J> N AMER P H I L I P S / D I S C R E T E BSP16 _ y v . _ SILICON PLANAR EPITAXIAL TRANSISTORS PNP transistors in m iniature plastic envelopes intended fo r use in am plifier and switching applications.

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D087 BSP15; BSP16 PNP high-voltage transistors Product specification Supersedes data of 1997 Apr 09 File under Discrete Semiconductors, SC10 1998 Aug 04 Philips Semiconductors Product specification PNP high-voltage transistors

BSP16T1

Abstract: SMD310 marking Bt2
Contextual Info: MOTOROLA Order this document by BSP16T1/D SEMICONDUCTOR TECHNICAL DATA BSP16T1 SOT-223 Package High Voltage Transistor PNP Silicon Motorola Preferred Device COLLECTOR 2,4 SOT–223 PACKAGE PNP SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT BASE 1 EMITTER 3

transistor bt2

Abstract: marking Bt2 marking .Bt2
Contextual Info: ON Semiconductort BSP16T1 SOT-223 Package High Voltage Transistor ON Semiconductor Preferred Device PNP Silicon SOT–223 PACKAGE PNP SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO –300

Contextual Info: Not Recommended for New Design Please Use FZTA92 SOT223 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR BSP16 ISSUE 3 – AUGUST 1995 FEATURES * High VCEO * Low saturation voltage C E COMPLEMENTARY TYPE: – BSP19 PARTMARKING DETAIL: – BSP16 C B ABSOLUTE MAXIMUM RATINGS.

BSP19

Abstract: BP317 BSP16 BSP20
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D087 BSP16 PNP high-voltage transistor Product specification Supersedes data of 1998 Aug 04 1999 Apr 28 Philips Semiconductors Product specification PNP high-voltage transistor BSP16 PINNING FEATURES • High voltage max. 350 V .

BSP16T1

Abstract: SMD310 C200C marking Bt2
Contextual Info: MOTOROLA Order this document by BSP16T1/D SEMICONDUCTOR TECHNICAL DATA BSP16T1 SOT-223 Package High Voltage Transistor PNP Silicon Motorola Preferred Device COLLECTOR 2,4 SOT–223 PACKAGE PNP SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT BASE 1 EMITTER 3

zt751

Abstract: 3055L 2955E 3055e SP19A zta96 2N02L marking 651 sot223
Contextual Info: SOT-223 DEVICES continued Plastic-Encapsulated High-Voltage Transistors Pinout: 1-Base, 2-Collector, 3-Emitter, 4-Collector h hFE Device Marking V (BR)CEO Min SP19A P1D BF720 SP20A 350 300 250 250 40 40 50 40 ZTA96 P2D BSP16 BF721 450 300 300 250 50 40 30

marking Bt2

Contextual Info: BSP16T1* MAXIMUM RATINGS Rating Collector-Emitter Voltage Symbol Value Unit Vdc VCEO -3 0 0 Collector-Base Voltage v CBO - 350 Vdc Emitter-Base Voltage Ve bo - 6 .0 Vdc Collector Current 'C - 1000 mAdc Base Current 'B - 500 mAdc Total Power Dissipation, T ^ = 2 5 C *

Contextual Info: BSP16T1G High Voltage Transistors PNP Silicon Features • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant MAXIMUM RATINGS Symbol Value Unit Collector-Emitter Voltage VCEO -300 Vdc Collector-Base Voltage VCBO -350

BSP19

Abstract: BSP16 FZT658
Contextual Info: SOT223 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR BSP19 ISSUE 3 – FEBRUARY 1996 FEATURES * High VCEO – 350V * Low saturation voltage C COMPLEMENTARY TYPE – BSP16 PARTMARKING DETAIL – BSP19 E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage

BSP16

Contextual Info: Transistors SMD Type PNP High-Voltage Transistor BSP16 SOT-223 Unit: mm +0.2 3.50-0.2 6.50 Features +0.1 3.00-0.1 High voltage max. 350 V . +0.15 1.65-0.15 0.1max +0.05 0.90-0.05 +0.2 -0.2 +0.2 0.90-0.2 +0.3 7.00-0.3 4 1 Base 1 2 Collector 3 2 +0.1 0.70-0.1