BBS3T31 Search Results

Contextual Info: _u _ N AUER PHILIPS/DISCRETE • ObE D bbS3T31 00113bl T ■ BYV33F SERIES T-03-19 SCHOTTKY-BARRIER, ELECTRICALLY-ISOLATED DOUBLE RECTIFIER DIODES High-efficiency schottky-barrier double rectifier diodes in SOT-186 full-pack plastic envelopes,

Contextual Info: _ _ _ I N AM PR PHXLIPS/DISCRETE DbE D PHS1101JSERIES IS bbS3T31 OOllbfl? 7 H T - <93 ~ /S' *1 b f t 15 EPITAXIAL AVALANCHE RECTIFIERS The P H S1 101 series devices are glass-passivated epitaxial silicon rectifier diodes in hermetically sealed

Contextual Info: JLL bbS3T31 D0114D7 fl OLE D N AUER PH ILI PS/ DIS CRET E BYV43F SERIES T—03—19 SCHOTTKY-BARRIER, ELECTRICALLY-ISOLATED DOUBLE RECTIFIER DIODES High-efficiency schottky-barrier double rectifier diodes in SOT-186 full-pack plastic envelopes, featuring very low forward voltage drop, low capacitance and absence of stored charge. Their electrical

Contextual Info: N AMER PHILIPS/DISCRETE fl7D D bbS3T31 COOTS47 5 11 . T -01-01 LID RELIABILITY DATA | UNIT HOURS #O F FAILURES FAILURE RATE* 1483 1,475,840 2 .21 1520 1,519,000 .06 TEMPERATURE # F UNITS Operating Life T ,= 150°C Storage Life Ta = 150°C ' test • . l| §

bc160

Contextual Info: N AMER PHILIPS/DISCRETE bTE D • bbS3T31 0027510 70b IAPX BC160 BC161 SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors in TO-39 metal envelopes for general purpose applications. N-P-N complements are BC140 and BC141. QUICK REFERENCE DATA BC160 BC161

philips blx14

Abstract: BLX14
Contextual Info: N AMER PHILIPS/DISCRETE bTE D • bbS3T31 DQ2TSbl T52 I BLX14 H .F./V .H .F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor fo r use in class-A, AB and B operated transmitting equipment in the h.f. and v.h.f. band. • rated fo r 50 W P.E.P. at 1,6 MHz to 28 MHz

Contextual Info: bbS3T31 0D3237T Philips Semiconductors ^ p^ Product specification CATV amplifier module — BGY89 ^ — N AMER PHILIPS/DISCRETE PINNING-SOT115C FEATURES • Extremely low noise 1 input • Silicon nitride passivation 2 common • Rugged construction 3 common

Contextual Info: N AMER PHILIPS/DISCRETE b^E » bbS3T31 QDS^SS2 T4T BLX13U IAPX H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor for use in transmitting amplifiers operating in the h.f. and v.h.f. bands, with a nominal supply voltage of 28 V. The transistor is specified for s.s.b. applications as linear

Contextual Info: bbS3T31 QDE4M5Q 73T » A P X Philips Semiconductors NPN general purpose transistor BC817W; BC818W AMER PHILIPS/DISCRETE FEATURES Product specification b7E D PIN CONFIGURATION • High current CM a; • S -m in i package. 1 D ESCRIPTION NPN transistor in a plastic SOT323

Contextual Info: N AUER PHILIPS/DISCRETE b'lE D bbS3T31 □ D2'132b m b I IAPX BLW34 U.H.F. LINEAR POWER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily intended for use in linear u.h.f. amplifiers for television transmitters and transposers. The excellent d.c. dissipation properties for class-A operation

Contextual Info: N AMER P H I L I P S / D I S C R E T E bbS3T31 0011173 a • ObE D BTW 63 SERES y v ^ r - a s - - 17 F i FAST TURN-OFF THYRISTORS Glass-passivated, asymmetrical, fast turn-off, forward blocking thyristors ASC R in TO-48 envelopes, suitable for operation in fast power inverters. For reverse-blocking operation use with a series diode,

Contextual Info: Philips Semiconductors bbS3T31 DD32EQ5 TMfi HIAPX Product specification NPN 4 GHz wideband transistor crystal X3A-BFQ34 N AUER PHILIPS/MSCRETE DESCRIPTION b^E ]> MECHANICAL DATA NPN crystal used in BFQ34T SOT37 , BFQ34 (SOT172) and BFG35 (SOT223). Crystals are supplied as whole

Contextual Info: _ l l N AMER PHILIPS/DISCRETE bbS3T31 QQ1S2D7 1 ObE D RXB12350Y IM ­ J PULSED MICROWAVE POWER TRANSISTOR N-P-N silicon power transistor fo r use in a common-base, class-C narrowband amplifier in avionics applications. It operates in pulsed conditions only and is recommended fo r IFF applications.

Contextual Info: N AMER PHILIPS/DISCRETE bTE D bbS3T31 0030500 3E4 • APX Product Specification Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

BFY90 PHILIPS

Contextual Info: bbS3T31 0032220 254 Philips Semiconductors • AP X Product specification NPN 1 GHz wideband transistor crystal X3A-BFW92 \ N AMER PHILIPS/DISCRETE DESCRIPTION bRE D MECHANICAL DATA Crystal NPN crystal used in BFW92 SOT37 , BFY90 (TO-72) and BFS17 (SOT23). Crystals are supplied as whole

Contextual Info: bbS3T31 QDE473T fill « A P X N AKER PHILIPS/DISCRETE BF991 b?E D 7 V SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SOT143 microminiature envelope w ith source and substrate interconnected. This MOS-FET tetrode is intended for use in v.h.f. applications, such as v.h.f.

Contextual Info: N ANER PHILIPS/DISCRETE ObE D bbS3T31 QD1S013 7 MAINTENANCE TYPE LV3742E24R MICROWAVE LINEAR POWER TRANSISTOR N-P-N transistor for use in a common-emitter class-A linear power amplifier from 3,7 to 4,2 GHz. Diffused emitter ballasting resistors, interdigitated structure, multiceli geometry, localized thick oxide

Contextual Info: • N AMER PHILIPS/DISCRETE □bE D ■ bbS3T31 D01S1S3 1 ■ PZB16035U _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _A r-3 3 -u % MICROWAVE POWER TRANSISTORS N-P-N transistor fo r use in common-base, class-B, am plifier under c.w. conditions in m ilita ry and professional applications up to 1,6 GHz.

BYT230PIV600

Contextual Info: 2SE D • bbS3T31 Q0255D1 0 ■ BYT230PIV600 to 800 N AUER PHILIPS/DISCRETE 7 =03-19 ULTRA FAST-RECOVERY DOUBLE RECTIFIER DIODES Glass-passivated, high-efficiency epitaxial rectifier diodes in ISOTOP envelopes, featuring low forward voltage drop, ultra fast reverse recovery times, very low stored charge and soft-recovery characterisitc.

2508DF

Abstract: bu2508df
Contextual Info: N A PIER P H I L I P S / D I S C R E T E bbS3T31 0026357 673 * A P X b'lE D Philips Semiconductors Product Specification Silicon Diffused Power Transistor BU2508DF GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated

Contextual Info: i i N AMER PHILIPS/DISCRETE b'lE »’ bbS3T31 DD27b3b TT3 « A P X BCY70 to 72 y v SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors in TO-18 metal envelopes intended for general purpose industrial applications. The BCY71 is a low noise version. Q U IC K R E F E R E N C E D A T A

d 1556 transistor

Contextual Info: • bbS3T31 0025fc.Qfl ISM « A P X N AMER PHILIPS/DISCRETE BSS64 b?E 3> HIGH VOLTAGE N-P-N TRANSISTORS Silicon planar epitaxial transistor in a microminiature plastic envelope intended for application in thick and thin-film circuits. This transistor is intended fo r high-voltage general purpose and switching

philips 4859

Contextual Info: Philips Semiconductors bbS3T31 D05SB11 D1S • APX N AMER PHILIPS/DISCRETE Product specification b?E D NPN 9 GHz wideband transistor FEATURES c BFR505 PINNING • High power gain PIN DESCRIPTION • Low noise figure Code: N30 • High transition frequency

PXTA14

Abstract: PMBTA64 BST60 PMBTA14
Contextual Info: N AflER PHILIPS/DISCRETE 5SE ]> • T-27~{?| bbS3T31 QQlt,E3T S ■ Surface Mount Devices DARLINGTON TRANSISTORS RATINGS TYPE PACKAGE hFE n V cE sat VCEO V VcB O V ic mA m inim ax. a t Iq /V c E mA/V V max. a tlc /le mA/mA typ MHZ PINOUT SEE SECTION VI N PN