DIN45004B Search Results

Contextual Info: R2005280L R2005280L Si Reverse Hybrid 5MHz to 200MHz Low Current Package: SOT-115J The R2005280L is a hybrid reverse amplifier. The part employs a silicon die. It has extremely low distortion and superior return loss performance. The part also provides optimal reliability with low noise and is well suited for 5MHz to

BGY67A

Abstract: DIN45004B
Contextual Info: BGY67A 200 MHz, 24 dB gain reverse amplifier Rev. 04 — 14 March 2005 Product data sheet 1. Product profile 1.1 General description Hybrid high dynamic range amplifier module in a SOT115J package operating at a voltage supply of 24 V DC . CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken

BFQ591

Abstract: transistor 09013 NPN 09013 NPN DIN45004B philips MATV amplifiers
Contextual Info: BFQ591 NPN 7 GHz wideband transistor Rev. 04 — 2 October 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact

R1005250L

Abstract: DIN45004B
Contextual Info: R1005250L R1005250L Low Current 5MHz to 100 MHz Si REVERSE HYBRID (LOW CURRENT) Package: SOT-115J Product Description Features The R1005250L is a hybrid reverse amplifier. The part employs a silicon die. It has extremely low distortion and superior return loss performance.

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D252 BGD702; BGD702MI 750 MHz, 18.5 dB gain power doubler amplifier Product specification Supersedes data of 2001 Oct 25 2001 Nov 02 Philips Semiconductors Product specification 750 MHz, 18.5 dB gain power doubler amplifier

DIN45004B

Abstract: R3005300L
Contextual Info: R3005300L R3005300L Low Current 5MHz to 300MHz Si REVERSE HYBRID (LOW CURRENT) Package: SOT-115J Product Description Features The R3005300L is a hybrid reverse amplifier. The part employs a silicon die. It has extremely low distortion and superior return loss performance.

DIN45004B

Abstract: R2005240P12 50dBmV
Contextual Info: R2005240P12 R2005240P1 2 5MHz to 200 MHz GaAs REVERSE HYBRID Package: SOT-115J Product Description Features The R2005240P12 is a hybrid reverse amplifier. The part employs a GaAs die. It has extremely low distortion and superior return loss performance. The part also provides optimal reliability with low noise and is well suited

DIN45004B

Abstract: R2005240 Premier Devices
Contextual Info: Product Specification R2005240 Si Reverse, 5 – 200MHz, 24.6dB typ. Gain @ 200MHz, 235A max. @ 24VDC FEATURES • • • • • • Excellent linearity Superior return loss performance Extremely low distortion Optimal reliability Low noise Unconditionally stable under all terminations

Premier Devices Germany

Abstract: DIN45004B R2005240P12
Contextual Info: Preliminary Product Specification R2005240P12 GaAs Reverse, 5 – 200MHz, 24.2dB typ. Gain @ 200MHz, 360mA max. @ 12VDC FEATURES • • • • • • Excellent linearity Superior return loss performance Extremely low distortion Optimal reliability Low noise

BGD812

Abstract: DIN45004B
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D252 BGD812 860 MHz, 18.5 dB gain power doubler amplifier Product specification Supersedes data of 2001 Sep 07 2001 Oct 30 NXP Semiconductors Product specification 860 MHz, 18.5 dB gain power doubler amplifier

BGD802

Abstract: DIN45004B
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D252 BGD802 860 MHz, 18.5 dB gain power doubler amplifier Product specification Supersedes data of 2001 Oct 30 2002 Jan 23 NXP Semiconductors Product specification 860 MHz, 18.5 dB gain power doubler amplifier FEATURES

BGD814

Abstract: DIN45004B
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET andbook, halfpage M3D252 BGD814 860 MHz, 20 dB gain power doubler amplifier Product specification Supersedes data of 2001 Sep 07 2001 Nov 01 NXP Semiconductors Product specification 860 MHz, 20 dB gain power doubler amplifier

BGR269

Abstract: DIN45004B
Contextual Info: BGR269 200 MHz, 35 dB gain reverse amplifier Rev. 6 — 5 August 2010 Product data sheet 1. Product profile 1.1 General description High performance amplifier in a SOT115J package, operating at a voltage supply of 24 V DC . CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken

MHW707-2

Abstract: MHW707-1 MRF947T1 equivalent mhw704 CR2428 MHW591 MHW592 MHW593 MHW707 MRF861
Contextual Info: RF Products In Brief . . . While Motorola is considered to be the supermarket for semiconductor products, there is not a category in which the selection is more diverse, or more complete, than in products designed for RF system applications. From MOS, bipolar

Contextual Info: MOTOROLA Order this document by CA912/D SEMICONDUCTOR TECHNICAL DATA The RF Line CA912 VHF/UHF CATV Amplifier CA912A . . . designed for broadband applications requiring low–distortion and high output capability. Specifically intended for CATV/MATV market requirements.

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D252 BGE787B CATV amplifier module Preliminary specification 2000 Oct 03 Philips Semiconductors Preliminary specification CATV amplifier module BGE787B PINNING - SOT115J FEATURES • Excellent linearity PIN

MCD990

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET andbook, halfpage M3D252 CGD914; CGD914MI 860 MHz, 20 dB gain power doubler amplifier Product specification Supersedes data of 2000 Jul 25 2001 Nov 01 Philips Semiconductors Product specification 860 MHz, 20 dB gain power doubler amplifier

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D252 CGY887A 860 MHz, 25.5 dB gain push-pull amplifier Product specification Supersedes data of 2001 Oct 25 2002 Apr 18 Philips Semiconductors Product specification 860 MHz, 25.5 dB gain push-pull amplifier

philips fr 310

Abstract: BGY588N equivalent
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D252 BGY588N 550 MHz, 34.5 dB gain push-pull amplifier Product specification Supersedes data of 2000 Feb 14 2001 Oct 22 Philips Semiconductors Product specification 550 MHz, 34.5 dB gain push-pull amplifier

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D252 BGY785A 750 MHz, 18.5 dB gain push-pull amplifier Product specification Supersedes data of 1999 Mar 30 2001 Nov 15 Philips Semiconductors Product specification 750 MHz, 18.5 dB gain push-pull amplifier

714P

Abstract: CA901 DIN45004B
Contextual Info: MOTOROLA Order this document by CA901/D SEMICONDUCTOR TECHNICAL DATA The RF Line VHF/UHF CATV Amplifiers CA901 Designed for broadband applications requiring low–distortion amplification. Specifically intended for CATV/MATV market requirements. These amplifiers

714P

Abstract: CA901 CA901A DIN45004B
Contextual Info: MOTOROLA Order this document by CA901/D SEMICONDUCTOR TECHNICAL DATA The RF Line CA901 VHF/UHF CATV Amplifiers CA901A . . . designed for broadband applications requiring low–distortion amplification. Specifically intended for CATV/MATV market requirements. These amplifiers

714P

Abstract: CA901 CA901A DIN45004B
Contextual Info: MOTOROLA Order this document by CA901A/D SEMICONDUCTOR TECHNICAL DATA CA901A The RF Line VHF/UHF CATV Amplifiers . . . designed for broadband applications requiring low–distortion amplification. Specifically intended for CATV/MATV market requirements. These amplifiers

Contextual Info: DISCRETE SEMICONDUCTORS DAT book, halfpage M3D252 BGD812 860 MHz, 18.5 dB gain power doubler amplifier Product specification Supersedes data of 2001 Sep 07 2001 Oct 30 NXP Semiconductors Product specification 860 MHz, 18.5 dB gain power doubler amplifier FEATURES