50DBMV Search Results

Contextual Info: R2005280L R2005280L Si Reverse Hybrid 5MHz to 200MHz Low Current Package: SOT-115J The R2005280L is a hybrid reverse amplifier. The part employs a silicon die. It has extremely low distortion and superior return loss performance. The part also provides optimal reliability with low noise and is well suited for 5MHz to

Contextual Info: R3005300L R3005300L 30dB Reverse Hybrid 5MHz to 300MHz Low Current Package: SOT-115J The R3005300L is a hybrid reverse amplifier. The part employs a silicon die. It has extremely low distortion and superior return loss performance. The part also provides

R1005250L

Abstract: DIN45004B
Contextual Info: R1005250L R1005250L Low Current 5MHz to 100 MHz Si REVERSE HYBRID (LOW CURRENT) Package: SOT-115J Product Description Features The R1005250L is a hybrid reverse amplifier. The part employs a silicon die. It has extremely low distortion and superior return loss performance.

DIN45004B

Abstract: R3005300L
Contextual Info: R3005300L R3005300L Low Current 5MHz to 300MHz Si REVERSE HYBRID (LOW CURRENT) Package: SOT-115J Product Description Features The R3005300L is a hybrid reverse amplifier. The part employs a silicon die. It has extremely low distortion and superior return loss performance.

D10040230PH1

Contextual Info: D10040230PH1 D10040230P H1 451000MHz GaAs/GaN Pwr Dblr Hybrid 45-1000MHz GaAs/GaN PWR DBLR HYBRID Package: SOT-115J Product Description Features The D10040230PH1 is a Hybrid Power Doubler amplifier module. The part employs GaAS pHEMT die and GaN pHEMT die, has high output capability, and is operated from 45MHz to 1000MHz. It provides excellent linearity and superior return loss performance with low noise and optimal

RF2316

Abstract: TA0015 DIN4500B RF2312 RF2317 HBT transistor s parameters measures
Contextual Info: TA0015  TA0015 RF2312/RF2317: High Linearity HBT Amplifiers for CATV Systems +LJK /LQHDULW\ +%7 $PSOLILHUV IRU &$79 6\VWHPV ,QWURGXFWLRQ The need for high linearity amplifiers arises from stress placed on communications channels by the addition of more data and the requirement to handle digitally modulated signals with high fidelity. As the amount of data

DIN45004B

Abstract: R2005240P12 50dBmV
Contextual Info: R2005240P12 R2005240P1 2 5MHz to 200 MHz GaAs REVERSE HYBRID Package: SOT-115J Product Description Features The R2005240P12 is a hybrid reverse amplifier. The part employs a GaAs die. It has extremely low distortion and superior return loss performance. The part also provides optimal reliability with low noise and is well suited

cgr0118z

Abstract: 100C
Contextual Info: CGR-0118Z Dual CATV 5MHz to 120MHz CATV Amp IC CGR-0118Z Preliminary DUAL CATV 5MHz to 120MHz CATV AMP IC RFMD Green, RoHS Compliant, and Pb-Free Product Package: SOIC 8 Product Description Features RFMD’s CGR-0118Z is a high performance 75Ω push-pull GaAs HBT

7856

Abstract: MC-7862 MC-7852 MC-7856 MC-7866 750-MHz
Contextual Info: GaAs CATV Hybrids 860MHz bandwidth, higher gain, Push-Pull Amplifiers and a significant improvement in CTB Part MC-7856 MC-7852 over silicon … plus assembly of these Bandwidth 50 – 860MHz 50 – 860MHz amplifiers is fully automated, so you're Gain 22dB @ 860MHz

Contextual Info: D10040200PH1 D10040200PH1 GaAs/GaN Power Doubler Hybrid 45MHz to 1000MHz Package: SOT-115J The D10040200PH1 is a Hybrid Power Doubler amplifier module. The part employs GaAs pHEMT and GaN HEMT die and is operated from 45MHz to 1000MHz. It provides high output capability, excellent linearity, and superior return loss

Contextual Info: RFPD2650 RFPD2650 GaAs/GaN Power Doubler Hybrid 45MHz to 1003MHz Package: SOT-115J The RFPD2650 is a Hybrid Power Doubler amplifier module. The part employs GaAs pHEMT die and GaN HEMT die, has extremely high output capability, and is operated from 45MHz to 1003MHz. It provides excellent linearity and superior return

Contextual Info: RFPD2670 RFPD2670 25dB Power Doubler Hybrid 40MHz to 1003MHz Package: SOT-115J The RFPD2670 is a hybrid power doubler amplifier module. The part employs GaAs MESFET, GaAs pHEMT and GaN HEMT die, has high output capability, and is operated from 40MHz to 1003MHz. It provides excellent linearity and

MC-7833

Abstract: MC-7831 MC-7831-HA MC-7832 MC-7834-KC MC-7845 MC-7846 MC-7847 MC-7847-KC MC-7881
Contextual Info: NEC CATV Hybrid Amplifiers Push-Pull Amplifiers VDD = 24V, ZS = ZL = 75 Ω www.cel.com Frequency (MHz, min – max) Gain (dB, min – max) CTB1 (dBc, max) MC-7831 50 – 870 18.0 – 19.0 -57 -57 -50 7.0 240 MC-7831-HA 40 – 1000 18.0 – 19.0 -57 -57

Philips FA 291

Abstract: Microwave PIN diode spice BFQ621 DIN45004B
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFQ621 NPN 7 GHz wideband transistor Product specification Supersedes data of 1995 Apr 11 File under Discrete Semiconductors, SC14 1995 Sep 26 Philips Semiconductors Product specification NPN 7 GHz wideband transistor BFQ621

Contextual Info: R1005300L R1005300L Low Current 5-100MHz Si REVERSE HYBRID (LOW CURRENT) Package: SOT-115J Product Description Features The R1005300L is a hybrid reverse amplifier. The part employs a silicon die. It has extremely low distortion and superior return loss performance.

Contextual Info: D8740240GT D8740240GT 40-870 MHz GaAs Power Doubler Hybrid 40-870MHz GaAs POWER DOUBLER HYBRID Package: SOT-115J Product Description Features The D8740240GT is a Hybrid Power Doubler amplifier module. The part employs GaAS die and is operated from 40MHz to 870MHz. It provides

Contextual Info: D10040200PL1 D10040200P L1 451000MHz GaAs/GaN Pwr Dblr Hybrid 45-1000MHz GaAs/GaN PWR DBLR HYBRID Package: SOT-115J Product Description Features The D10040200PL1 is a Hybrid Power Doubler amplifier module. The part employs GaAs pHEMT and GaN HEMT die and is operated from 45MHz to

Contextual Info: RFPD2580 RFPD2580 45MHz to 1200MHz GaAs/GaN Power Doubler Hybrid 45MHz to 1200MHz GaAs/GaN POWER DOUBLER HYBRID Package: SOT-115J +VB Features ̈ ̈ ̈ ̈ ̈ ̈ ̈ ̈ ̈ Excellent Linearity Superior Return Loss Performance Extremely Low Distortion Optimal Reliability

Contextual Info: RFRP2920 RFRP2920 5MHz to 100MHz Si REVERSE HYBRID 5MHz to 100MHz Si REVERSE HYBRID LOW CURRENT Package: SOT-115J +VB Features   Excellent Linearity Superior Return Loss Performance  Extremely Low Distortion  Optimal Reliability  Low Noise

Contextual Info: D10040200PH1 D10040200P H1 451000MHz GaAs Power Doubler Hybrid 45-1000MHz GaAs POWER DOUBLER HYBRID Package: SOT-115J Product Description Features The D10040200PH1 is a Hybrid Power Doubler amplifier module. The part employs GaAs pHEMT and GaN HEMT die and is operated from

X6866D

Abstract: X6855M X6965M EPCOS SAW X6855M bjt differential amplifier X6964D x6966m EPCOS SAW X6966M X6857D
Contextual Info: RF3330 Preliminary 3 IF GAIN CONTROLLED AMPLIFIER Typical Applications • CATV Set-Top Boxes • Cable-Ready TVs • Cable Modems 3 0.15 0.05 1.59 1.61 0.365 TEXT* The RF3330 is a gain-controlled amplifier suitable for application in the IF receive section of a cable tuner. It

X6866D

Abstract: X6964D X6966M EPCOS SAW X6966M X6965M X6857D
Contextual Info: RF3330 Preliminary  , *$,1 &21752// ' $03/,),(5 7\SLFDO $SSOLFDWLRQV • CATV Set-Top Boxes • Cable-Ready TVs 3 LINEAR CATV AMPLIFIERS • Cable Modems 3URGXFW 'HVFULSWLRQ 0.15 0.05 1.59 1.61 0.365 TEXT* The RF3330 is a gain-controlled amplifier suitable for

SOT115

Contextual Info: RFMD. RFCM2680—The World’s First GaN-Based Surface Mount Power Doubler The RFMD RFCM2680 is a CATV power doubler amplifier in a multi-chip module. The part employs GaAs pHEMT die and GaN HEMT die. It provides an extremely high output level of 61dBmV with a 18dB tilt channel loading and is

Contextual Info: D10040200PL1 D10040200PL1 GaAs/GaN Power Doubler Hybrid 45MHz to 1000MHz Package: SOT-115J The D10040200PL1 is a Hybrid Power Doubler amplifier module. The part employs GaAs pHEMT and GaN HEMT die and is operated from 45MHz to 1000MHz. It provides high output capability, excellent linearity, and superior return loss