BGD802 Search Results

BGD802

Abstract: DIN45004B
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D252 BGD802 860 MHz, 18.5 dB gain power doubler amplifier Product specification Supersedes data of 2001 Oct 30 2002 Jan 23 NXP Semiconductors Product specification 860 MHz, 18.5 dB gain power doubler amplifier FEATURES

BGD802

Abstract: BGD802MI DIN45004B
Contextual Info: Philips Semiconductors Product specification Hybrid CATV amplifier module BGD802MI FEATURES PIN N IN G -S O T115J2 • Excellent linearity PIN DESCRIPTION • Extremely low noise 1 output • Excellent return loss properties 2 common • Silicon nitride passivation

BGD802

Abstract: DIN45004B
Contextual Info: Philips Semiconductors Product specification Hybrid CATV amplifier module FEATURES BGD802 P IN N IN G -S O T115J2 • Excellent linearity PIN • Extremely low noise DESCRIPTION 1 input • Excellent return loss properties 2 common • Silicon nitride passivation

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BGD802 CATV amplifier module Product specification Supersedes data of 1996 Jul 15 File under Discrete Semiconductors, SC16 1997 Mar 27 Philips Semiconductors Product specification CATV amplifier module BGD802 PINNING - SOT115J

BGD802MI

Abstract: BGD802 DIN45004B
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D252 BGD802; BGD802MI 860 MHz, 18.5 dB gain power doubler amplifier Product specification Supersedes data of 1999 Mar 26 2001 Oct 30 Philips Semiconductors Product specification 860 MHz, 18.5 dB gain power doubler amplifier

BGD802

Abstract: DIN45004 DIN45004B
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D252 BGD802 860 MHz, 18.5 dB gain power doubler amplifier Product specification Supersedes data of 2001 Oct 30 2002 Jan 23 Philips Semiconductors Product specification 860 MHz, 18.5 dB gain power doubler amplifier

Contextual Info: Philips Semiconductors Product specification CATV am plifier modules BGD802; BGD802MI FEATURES PINNING -SOT115J • Excellent linearity DESCRIPTION PIN • Extremely low noise BGD802 • Excellent return loss properties • Silicon nitride passivation • Rugged construction

BGD802

Abstract: BGD802MI DIN45004B
Contextual Info: Philips Semiconductors Product specification Hybrid CATV amplifier module BGD802MI FEATURES PIN N IN G -SO T115J • Excellent linearity PIN DESCRIPTION • Extremely low noise 1 output • Excellent return loss properties 2 common • Silicon nitride passivation

BGD802N

Abstract: DIN45004B
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D252 BGD802N 860 MHz, 18.5 dB gain power doubler amplifier Product specification Supersedes data of 1999 Mar 22 2001 Nov 2 Philips Semiconductors Product specification 860 MHz, 18.5 dB gain power doubler amplifier

Contextual Info: DISCRETE SEMICONDUCTORS BGD802; BGD802MI CATV amplifier modules Product specification Supersedes data of 1998 Mar 13 Philips Semiconductors 1999 Mar 26 PHILIPS PHILIPS Philips Semiconductors Product specification CATV amplifier modules BGD802; BGD802MI FEATURES

hybrid for catv amplifier

Abstract: BGD802 BGD802MI DIN45004B
Contextual Info: Philips Semiconductors Product specification Hybrid CATV amplifier module FEATURES BGD802MI PINNING -S O T115J2 • Excellent linearity PIN • Extremely low noise DESCRIPTION 1 output • Excellent return loss properties 2 common • Silicon nitride passivation

BGD802

Abstract: DIN45004B
Contextual Info: Philips Semiconductors Product specification Hybrid CATV amplifier module BGD802 FEATURES PINNING -SOT115J2 • Excellent linearity PIN • Extremely low noise DESCRIPTION 1 input • Excellent return loss properties 2 common • Silicon nitride passivation

"Amplifier Modules"

Abstract: CATV amplifier transistor BGD802 BGD802MI BP317 DIN45004B
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D252 BGD802; BGD802MI CATV amplifier modules Product specification Supersedes data of 1998 Mar 13 1999 Mar 26 Philips Semiconductors Product specification CATV amplifier modules BGD802; BGD802MI FEATURES

BGD802N

Abstract: BP317 DIN45004B
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D252 BGD802N CATV amplifier module Product specification Supersedes data of 1997 Sep 03 1999 Mar 22 Philips Semiconductors Product specification CATV amplifier module BGD802N FEATURES PINNING - SOT115J • Extremely flat gain response

Contextual Info: DISCRETE SEMICONDUCTORS DAT M3D252 BGD802 860 MHz, 18.5 dB gain power doubler amplifier Product specification Supersedes data of 2001 Oct 30 2002 Jan 23 NXP Semiconductors Product specification 860 MHz, 18.5 dB gain power doubler amplifier FEATURES BGD802

BGD802

Abstract: BGD802MI BP317 DIN45004B SC16
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BGD802MI Hybrid CATV amplifier module Product specification File under Discrete Semiconductors, SC16 1996 Jul 15 Philips Semiconductors Product specification Hybrid CATV amplifier module BGD802MI FEATURES PINNING - SOT115J2

BGD802

Abstract: DIN45004B
Contextual Info: Philips Semiconductors Product specification CATV amplifier module BGD802 FEATURES PIN N IN G -SO T115J • Excellent linearity PIN DESCRIPTION • Extremely low noise 1 input • Excellent return loss properties 2 common • Silicon nitride passivation 3

BGD802N

Abstract: DIN45004B
Contextual Info: Philips Semiconductors Product specification Hybrid CATV amplifier module BGD802N FEATURES PIN N IN G -SO T115J • Extremely flat gain response PIN DESCRIPTION • Excellent linearity 1 input • Extremely low noise 2 common • Excellent return loss properties

bgd802

Abstract: BP317 DIN45004B SC16 DK-23 DIN4500
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BGD802 Hybrid CATV amplifier module Product specification Supersedes data of 1996 Apr 25 File under Discrete Semiconductors, SC16 1996 Jul 15 Philips Semiconductors Product specification Hybrid CATV amplifier module BGD802

Contextual Info: DISCRETE SEMICONDUCTORS BGD802N CATV amplifier module Product specification Supersedes data of 1997 Sep 03 Philips Semiconductors 1999 Mar 22 PHILIPS PHILIPS Philips Semiconductors Product specification CATV amplifier module BGD802N FEATURES P IN N IN G -S O T115J

Contextual Info: Philips Semiconductors Product specification CATV amplifier module BGD802N FEATURES PINNING -SOT115J • Extremely flat gain response PIN DESCRIPTION • Excellent linearity 1 input • Extremely low noise 2 common • Excellent return loss properties 3 common

MRF581

Abstract: 2SK163 BFG480W NB b6 smd transistor 2SK508 SMD transistor n36 bf998 TEF6860HL 3SK290 baw 92
Contextual Info: RF᠟‫ݠ‬㄀8⠜ RF RFׂ೗‫ڦ‬ᆌᆩࢅยऺ๮֩ 2006౎6ሆ ݀քන೺ǖ2006౎6ሆ ࿔ॲຩႾࡽǖ9397 750 15589 Henk RoelofsLjޭጺ֋&ጺঢ়૙RFׂ೗ ०঻ ௅ᅃӲԨ࿢்‫ࣷۼ‬ၠጲम༵‫؜‬཈቟ᅜ߀฀࿢்‫ڦ‬RF๮֩ă‫ڼ‬8Ӳᄺփ૩ྔă࿢்ᅙཁेକ߸‫ܠ‬एᇀ

Motorola transistor smd marking codes

Abstract: walkie-talkie transceiver diagram BFM505 BF256B spice model 2SK163 UAF3000 BGO807C FET marking code 365 marking code M2 SOT23 SOT56
Contextual Info: RF Manual 8 edition th Application and design manual for RF products June 2006 date of release: June 2006 document order number: 9397 750 15589 Henk Roelofs,Vice President & General Manager RF Products Introduction Every edition we challenge ourselves to improve our RF manual. This 8th edition is no exception.

LPC2148 i2c

Abstract: BGB210S lpc2148 interfacing 2.8" TFT LCD DISPLAY BGB210 embedded c code to interface lpc2148 with sensor BGW200 TDA8932T tda8920bj NXP PN531 TDA8947J equivalent
Contextual Info: Building blocks for vibrant media Highlights of the NXP product portfolio Building blocks for vibrant media  At NXP Semiconductors, the new company founded by Philips, we’re driven by a single purpose — to deliver vibrant media technologies that create better sensory experiences.