7110FL5B Search Results

transistor tt 2222

Abstract: TT 2222 os TT 2222 LM 2222 transistor tt 2222 vertical BLf221 2222-581 BH RV transistor BLF221B OP03
Contextual Info: Preliminary »pacification Philips Semiconductors HF/VHF power MOS transistor PHILIPS INTERNATIONAL FEATURES BLF221B SbE D • 7110fl5b 0DM37Mel 37M HIPHIN PIN CONFIGURATION • High power gain • Easy power control • Gold metallization • Good thermal stability

Contextual Info: Philips Semiconductors Preliminary »pacification T HF/VHF power MOS transistor PHILIPS INT ER NATIONAL FEATURES - 3 V - 0 5 BLF221B 5bE P • 7110fl5b □ D M 3 7 4 el 37M H P H I N PIN CONFIGURATION • High power gain • Easy power control • Gold metallization

74ABT574

Abstract: 74ABT574N 74ABT374 74ABT574D 74ABT574DB 74ABT574PW 74ABT574 Philips
Contextual Info: INTEGRATED CIRCUITS [M m m 74ABT574 Octal D-type flip-flop 3-State Product specification 1995 Feb 16 IC23 Data Handbook Philips Semiconductors PHILIPS 7110fl5b OOflb^D W Philips Semiconductors Product specification Octal D-type flip-flop (3-State) 74ABT574

BUK436-200A

Abstract: BUK436-200B MN1 transistor
Contextual Info: PHILIPS INTERNATIONAL L5E D • 7110fl5b ODbB^Dl ObS BiPHIN Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

74ABT

Abstract: 74ABT373 74ABT573 74ABT573D 74ABT573N 74ABT573 Philips
Contextual Info: PHILIPS INTERNATIONAL bSE D • 7110fl5b 0D5752S T27 ■ PHIN Philips Sem iconductors Advanced BiCMOS Products Product specification Octal D-type transparent latch 3-State 74ABT573 QUICK REFERENCE DATA FEATURES • 74ABT573 is broadside pinout version of

YBs transistor

Abstract: BUK437-400B
Contextual Info: PHILIPS INTERNATIONAL bSE D O 7110fl5b DDbBTlb 5^b « P H I N Philips Sem iconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

61-BF

Contextual Info: BDT61F; 61AF BDT61BF; 61CF ’H I L I P S I N T E R N A T I O N A L 5fc,E D .J. 7110fl5b 0 0 4 3 2 3 D • 7^3 ■ P H I N SILICON DARLINGTON POWER TRANSISTORS NPN silicon power transistors in a monolithic Darlington circuit and housed in a SOT186 envelope

transistor bh ra

Abstract: WE VQE 24 E D 400 F 6 F BIPOLAR TRANSISTOR WE VQE 11 E BUK856-800A T0220AB M 615 transistor
Contextual Info: PHILIPS INTERNATIONAL bSE D • 7110fl5b 00b4353 ^bS ■ P H I N Philips Semiconductors_ Product Specification Insulated Gate Bipolar Transistor IGBT GENERAL DESCRIPTION QUICK REFERENCE DATA Fast-switching N-channel insulated gate bipolar power transistor in a

c 879 transistor

Abstract: BFT24 t 326 Transistor 702 P TRANSISTOR
Contextual Info: Product specification Philips Sem iconductors Ê= NPN 2 GHz wideband transistor PHILIPS INTERNATIONAL 5LE • D BFT24 B FT24 5 7110fl5b O G M S ^ b TMT « P H I N PINNING DESCRIPTION NPN transistor in a plastic SO T37 envelope. DESCRIPTION PIN 1 base It is prim arily intended for use in RF

Contextual Info: LOW VOLTAGE PRODUCTS 74LVT16245B-1 3.3V LVT 16-bit transceiver with 30Q termination resistors 3-State Product specification October 7, 1994 IC24 Philips Semiconductors PHILIPS PHILIPS 7110fl5b 007=5002 725 , Philips Semiconductors Low Voltage Products Product specification

BUK436-200B

Contextual Info: PHILIPS INTERNATIONAL L5E D • 7110fl5b ODbB^Dl ObS BiPHIN Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

transistor tt 2222

Abstract: ic TT 2222 BLW 89 blw89 transistor
Contextual Info: PHILIPS INTERNATIONAL bSE D m 7110fl5b GübBB?'! EÔ4 PHIN BLW 89 J \ _ U.H.F. PO W ER T R A N SIS T O R N-P-N silicon planar epitaxial transistor suitable for transmitting applications in class-A, B or C in the u.h.f. and v.h.f. range for a nominal supply voltage of 28 V. The transistor is resistance stabilized and

SFE10.52MJA10

Abstract: 8745H
Contextual Info: Philips Semiconductors Preliminary specification Satellite sound receiver with l2C-bus control TDA8745 FEATURES • On-chip frequency synthesizer and mixer: - tuning range 4 to 9.77 M Hz - reference oscillator 4 M H z using a crystal or 4 MHz frequency source

silicon planar epitaxial transistors

Contextual Info: BCY70 to 72 PHILIPS IN TERNATIONA L SbE D 711 002 b DOMElOti bTb BIP HIN SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors in TO-18 metal envelopes intended fo r general purpose industrial applications. The BCY71 is a low noise version. QUICK REFERENCE D A TA

D441

Abstract: BD436 437 bd 8043 BD439 MHC11 BD433 BD434 BD435 BD437
Contextual Info: Philips Semiconductors Preliminary specification Silicon epitaxial-base transistors PHILIPS INTERNATIONAL DESCRIPTION SbE D • 711DfiSb □D4SclDti *153 ■ P H I N QUICK REFERENCE DATA SYMBOL ^CES PINNING - TO-126 SOT32 DESCRIPTION 1 emitter 2 collector

BUK455-600B

Abstract: LG 631
Contextual Info: PHILIPS bSE J> INTERNATIONAL m 711Gfl2b 0Db4101 Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,

vexta

Abstract: TI TV multi band tuner IC Divider QFP44 SDIP42 TDA8742 TDA8742H 0.1 mKF capacitor
Contextual Info: INTEGRATED CIRCUITS & S M U T TDA8742; TDA8742H Satellite sound circuit with noise reduction Product specification Supersedes data of November 1992 File under Integrated Circuits, IC02 October 1994 Philips Semiconductors PHILIPS PHILIPS 7110fl2fc. 0 0 7 6 1 3 4

m3303

Abstract: 10a ultra fast diode M3306 BYR34 BYR34-500 M3299
Contextual Info: SbE D • 711DflSb DDmSSfl IPHIN T'lfl DEVELOPMENT DATA T h is d a ta she e t c o n ta in s BYR34 SERIES advance in fo r m a t io n and s p e c ific a tio n s are s u b je c t to ch a n g e w it h o u t n o tic e . PHILIPS INTER N A T I O N A L ULTRA FAST RECOVERY DOUBLE RECTIFIER DIODES

specifications tv pattern generator

Abstract: pwm0003 FTH A 001 26 10 IC PRESET TV TUNING KAE V2 QFP48 square tv font PCA84C640 PCA84C846 PCA84C846H
Contextual Info: PHILIPS INTERNATIONAL bSE D □ 711002b DObOSai 4T7 « P H I N Philips Objective specification Microcontroller for TV tuning control and OSD application prAaariM fi CONTENTS 1 FEATURES PCA84CXXX KERNEL

NE6753

Abstract: audiom PHILIP A7 A7B0 D053 NE5753 NE5753D NE5753DK SA5752 SA5753
Contextual Info: PHILIPS INTERNATIONAL bOE » • ?110fi2b 0053^03 T3T « P H I N Objective pacification Philip« Sem iconductor* RF Communication* Product* NE/SA5753 Audio processor-filter and control section DESCRIPTION FEATURES The NE/SA5753 is a high performance low power CMOS audio signal processing system

P83C524

Abstract: 80C51 P83C524FBA P83C524FBP P83C524FFA P83C524FFP P83C524FHP
Contextual Info: P H IL IP S I N T E R N A T I O N A L bSE J> □ 7 1 1 D Ö 2 b D D b l 3 4 3 544 H P H I N Philips Preliminary specification 8-bit microcontroller P83C524 CONTENTS 15 INSTRUCTION SET 1 FEATURES

3843 application note

Abstract: HP2 800 243 PCF84C85P MAB8400 3M 4611 dpi 510 MAB8048 PCF84C85 PCF84C85T 8c032
Contextual Info: DEVELOPMENT DATA PCF84C85 This data sheet contains advance information and specifications are subject to change without notice. PHILIPS INTERNATIONAL - 34E D H 7110aab 0011415 4 B “T ^ - W - O S SINGLE-CHIP 8-BIT MICROCONTROLLER WITH 32 I/O LINES D ESCRIPTIO N

74f162 pc

Abstract: 74f162 U5033 74F160A 74F161A 74F162A 74F163A F161A F163A N74F160AN
Contextual Info: PHILIPS INTERNATIONAL Philips Semiconduciors-SIgneHcs Document No. 853-0347 ECN No. 0347 Date of issue October 7,1988 Status Product Specification S fiE I • T H O S E b 0 0 5 1 1 3 2 TS b IPHIN FAST 74F160A,74F161 A 74F162A,74F 163A Counters ’F160A, 'F162A BCD Decade Counter

P87C575EHAA I

Abstract: P83C575EHPN 80C51 80C575 83C575 87C575 EC20D 2031h
Contextual Info: Philips Semiconductora Microcontroller Product 7 1 1 □ fl 2 b 0□bbb03 CMOS single-chip 8-bit microcontroller Product specification PHIN 80C575/83C575/87C575 • 80C51 based architecture - 8k x 8 ROM 83C575) - 8k x 8 EPROM (87C575) - ROMIess (80C575)