T0220AB Search Results

2sj239

Abstract: TE12L 2SK1118 2SJ239LB 2SK1717 k1119 2SK1380 2SK945 2SK1913 T0220FL
Contextual Info: MOSFET Product Matrix VdssM * 100 *1 20 60 Id A * 0.6 o 0.8 o 2SK1078(TE12L)[0.55] 1.0 o 2SJ238(TE12L)[0.85] 2.0 o 2SK1717(TE12L)[0.37] 200 250 400 I 2SK1079(TE12L)[1.3] • 2SK945(LB,STA1)[5.0] * • 2SK1113[0.6] 3.0 • 2SK 1112(LB,STA1)[0.16] • 2SK1719(LB,STA1)[0.11]

2SK1118

Abstract: 2SK1513 TO-3P 2SK1723 2SK790 p-channel fet to-220
Contextual Info: Power MOS FET tc-MOS Application Type No. N-CHANNEL P-CHANNEL 2SJ200 2SJ201 Audio Power Amp. 2SK1529 2SK1530 2SK357 2SK358 2SK525 2SK526 2SK532 DC/DC Converter 2SK387 Motor Driver 2SK3B8 2SK572 2SK578 2SK573 2SK447 2SK1641 2SK945 2SK528 2SK529 2SK530 2SK531

Transistor 2SA 2SB 2SC 2SD

Abstract: S-AU27M S2000A inverter P4005 S-AV21H S-AU27 3182N 2sb 834 transistor Transistor 2SC4288A Drive IC 2SC3346
Contextual Info: TO-126 IS , PO W ER MOLD PACKAGE TRANSISTOR SELECTION GUIDE • TO-126 (IS) ▲ PW MOLD Darlington A PW MOLD • POWER MOLD TO-126 (IS) Darlington TO-126 OS) H A T0-220AB, TO-220 (IS) PACKAGE TRANSISTOR S E L ECTION G UIDE r— " ~ '''- Y C E O ( V ) lc (A)

TL751M10

Contextual Info: TL750M, TL751M SERIES LOW-DROPOUT VOLTAGE REGULATORS SLVS021D - JA N U A R Y 1986 - REVISED A U G U S T 1996 • 60-V Load-Dump Protection • Very Low Dropout Voltage, Less Than 0.6 V at 750 nr A • Overvoltage Protection • Internal Thermal Overload Protection

YTF540

Contextual Info: FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOS h HIGH SPEED. HIGH CURRENT SWITCHING APPLICATIONS. CHOPPER REGULATOR,DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS. INDUSTRIAL APPLICATIONS Unit in mm 10 .3 MA X. • FEATURES: •Low Drain-Source ON Resistance : ROS(ON)= 0.07ß (Typ.)

Contextual Info: MOTOROLA Order this document by MCR12/D SEMICONDUCTOR TECHNICAL DATA MCR12 SERIES* Advance Information 'Motorola preferred devices Silicon Controlled Rectifiers Reverse Blocking Thyristors SCRs 12 AMPERES RMS 600 thru 800 VOLTS Designed primarily for half-wave ac control applications, such as motor

Contextual Info: Tem ic SUP/SUB65P06-20 S em i co n d u c t or s P-Channel Enhancement-Mode Transistors Product Summary V BR DSS (V) Id (A) r DS(on) ( ^ ) 0.020 -6 0 -6 5 a T0-220AB o TO-263 < 1 n DRAIN connected to TAB G D S Top View GD S Ô D SUB65P06-20 Top View SUP65P06-20

Contextual Info: SUP/SUB75N06-07L S ilic o n ix N-Channel Enhancement-Mode Transistors Product Summary I d A rDS(on) (ß ) 0.0075 @ VGS = 10 V V(BR)DSS 60 75a 0.0085 @ VGS = 4.5 V D Q TO-220AB o TO-263 t 1 0— DRAIN connected to TAB l! TPT Top View SUB75N06-07L GD S Top View

L79H05

Abstract: L79K L79M12
Contextual Info: SANYO SEMICONDUCTOR CORP L79M00 Series ~ ~ 1HE D | TWQTb Q0Q3SDD T-SK-fi-13 <0" 3028 _ M o nolithic Linear 1C - 5 to - 2 4 V 0 . 5 A 3-Pin Voltage Regulator Features . Output Voltage . . . . . L79M05:-5V L79M10:-10V L79M24:-21tV

2SD1300

Abstract: transistor 2SB1201 2SA124 transistor 2SD1724 2SB1205
Contextual Info: SANYO TP Tiny Package Transistor Series Our TP (Tiny Package) transistor series are smaller in size as compared with the TO-126,T0-220AB heretofore in use and facilitate high-density mounting that makes it possible to make electronic equipment smaller and slimmer.

Q400414

Abstract: 06040J7 TO810MH q2006l5 triac Q2008F51 Triac SC141D L201E5 SC136B L4004F91 T6401M
Contextual Info: LORAS INDUSTRIES ITrms Amps PART No. INC 42E VDRM IDRM Volts mAmps PACKAGE Q1 D 5500440 TRIAC IGT Q2 Q3 mAmps DOOOODt. T IL O R A “T - 2 5 ' O Î VGT Volts Q4 Ih mAmps ITM Amps VTM Volts 0.6 Amps ITrms TO-92 Package MAC974 MAC976 0.6 0.6 MA0&7fr " : MAC97A3 "•

2SC4383

Abstract: 2SC2767 2SC2769 2SC3723 2SC3724 2SC3821 2SC3822 2SC4242 T0220AB T0-220F
Contextual Info: C O L L ME R S E M I C O N D U C T O R INC m MAE D 2 2 3 0 7 ^ 2 O O O I S T T Tflô « I C O L BIPOLAR TR A N SISTO R S Ratings and Specifications Q 1'3S''C High speed sw itching transistors • S u it a b le f o r 5 0 k H z c l a s s s w it c h in g r e g u la t o r s

BUK455-500B

Abstract: T0220AB
Contextual Info: PHILIPS INTERNATIONAL bSE D B 711Gâ2ti GObMGTb SGÔ M P H I N Philips Semiconductors Product Spécification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

8uk453

Abstract: BUK453-60A BUK453-60B T0220AB
Contextual Info: PHILIPS IN T E R NA TI ON AL bSE D B 711Dfl2b D D m O B L Philips Semiconductors PowerMOS transistor G EN ERA L DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

TRANSISTOR BO 344

Abstract: TRANSISTOR BO 341 tny 175 BUK455 BUK455-100A BUK455-100B T0220AB data transistor 1650
Contextual Info: PHILIPS INTERNATIONAL bSE D • 7110fl2b ODbMOfll 067 ■ PHIN Philips Semiconductors Product Specification PowerMOS transistor GEN ERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

Kc 520 B

Contextual Info: TL750L, TL751L SERIES TL751L05M, TL751L12M, TL750LxxY LOW-DROPOUT VOLTAGE REGULATORS S L V S 0 1 7 B - SEPTEM BER 1 9 8 7 - REVISED AUG UST 1995 • Reverse Transient Protection to -5 0 V • Very Low Dropout Voltage, Less Than 0.6 V at 150 mA • Internal Thermal Overload Protection

F103M

Contextual Info: YTF633 FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE jr-M O Sn HIGH SPEED,HIGH CURRENT SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS CHOPPER REGULATOR,DC-DC CONVERTER AND HOTOR Unit in urn DRIVE APPLICATIONS. 10.3MAK. f- ¿3.610.2 FEATURES: •Low Drain-Source ON Resistance :

buk657-500

Abstract: BUK657-500B T0220AB transistor D 588
Contextual Info: fc>5E T> PHILIPS INTERNATIONAL B VllDBEb 0Db432b =137 HIPHIN Philips Semiconductors Product Specification PowerMOS transistor BUK657-500B Fast recovery diode FET_ _ GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a

TA78DL06P

Abstract: TA78DL12P TA78DL05P 8DL05 18-SO TA78 TA78DL08P
Contextual Info: N E A R IN T E G R A T E D C IR C U IT S IL IC O N M O N O L IT H IC o 5 V , 6V, 8 V , 9V , 10V, TA78DL05P—TA78DL24P 1 2 V , 15V LOW DROPOUT VOLTAGE REGULATOR The TA78DL series are three-terminal regulators with maximum output current 250mA, packed in transistor size TO-220AB, consuming low standby

THYRISTOR SN 101

Abstract: SF5J42 SF5G42 TOSHIBA THYRISTOR ED 78 A
Contextual Info: TOSHIBA SF5G42,SF5J42 TOSHIBA THYRISTOR SILICON DIFFUSED TYPE SF5G42, SF5J42 MEDIUM POWER CONTROL APPLICATIONS. Unit in mm • Repetitive Peak Off-State Voltage Repetitive Peak Reverse Voltage V d rm y = V rrm J • Average On-State Current IrT AV = 5A .

20N35GVL

Abstract: HGT1S20N35G3VL HGT1S20N35G3VLS HGTP20N35G3VL HGT1S20N35G3VLS9A TA49076 ignition WITH IGBTS T0-262AA T0263AB
Contextual Info: HGTP20N35G3VL, HGT1S20N35G3VL, HGT1S20N35G3VLS 20A, 350V N-Channel, Logic Level, Voltage Clamping IGBTs April 1995 Features Packages JEDEC TO-220AB • Logic Level Gate Drive COLLECTOR EMITTER • Internal Voltage Clamp GATE COLLECTOR FLANGE • ESD Gate Protection

Contextual Info: TOSHIBA íDISCRETE/OPTOJ T i T D T 7 E S G 9097250 TOSHIBA DISCRETE/OP' tfoâtiïba. 99D 16876 D TOSHIBA FIELD EFFECT TRANSISTOR SEMICONDUCTOR - DDlbñVb Y T F 6 4 0 SILICON N CHANNEL MOS TYPE TECHNICAL DATA (TT-hosh Y - s q - ' / } HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS.

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCR12 SERIES* Advance Information •Motorola preferred devices Silicon Controlled Rectifiers SCRs 12 AMPERES RMS 400 thru 800 VOLTS Reverse Blocking Thyristors Designed primarily for half-wave ac control applications, such as motor

Contextual Info: TOSHIBA {DISCRETE/OPTO} Tí D eT I t D ^ S G 990 16850 9097250 TOSHIBA DISCRETE/OPTO ^/oihlha üDlbñSG 3 D 1-39-13 TOSHIBA FIELD EFFECT TRANSISTOR SEMICONDUCTOR Y T F 5 4 3 SILICON N CHANNEL MOS TYPE TECHNICAL DATA (ff-MOSIT) INDUSTRIAL APPLICATIONS Unit in mm