S0T199 Search Results

BUT11A1

Abstract: Power Bipolar Transistors bu2708dx BU2725DX BU1508AX BU4506AX BU2532 BU4506AF BU2720DX BU2527
Contextual Info: LEADED PACKAGES VcESM V 1500 tf lc lc (DC) sat. max. (A) 2.5 (A) 2 fas) 0.9 S0T82 S0T78 (T0220AB) S0T186A S0T186 (isolated S0T199 T0220AB) BU505 BU505D BU505F BU505DF BU506 BU506D BU506F BU506DF S0T399 (TOP3D) SOT429 (T0247) SOT430 (TOP3L) TYPICAL APPLICATIONS

BDV65CF

Contextual Info: Philips Com ponents BDV65F/65AF/65BF/65CF D a ta s h e e t statu s Product specification d a te o f issue December 1990 NPN silicon Darlington power transistors PINNING - SOT199 DESCRIPTION PIN NPN epitaxial base transistors in a monolithic Darlington circuit for

TRANSISTORE

Contextual Info: Philips Semiconductors High-voltage and Switching NPN Power Transistors Lead,orm °P*,ons LEADFORM OPTIONS • These options require a special part number before ordering. roì f~ c r? • Contact your local Philips Semiconductors representative for pricing, minimum order quantities

399-02

Abstract: Power Bipolar Transistors Leadform "Bipolar transistors" sot199
Contextual Info: Philips Semiconductors Leadform options Power Bipolar Transistors LEADFORM OPTIONS • These options require a special part number before ordering. • Contact your local Philips Semiconductors representative for pricing, minimum order quantities and part number.

Contextual Info: Philips Semiconductors High-voltage and Switching NPN Power Transistors ^ . Genaral TRANSISTOR RATINGS VCEmax The maximum permissible instantaneous Cut-off voltage between collector and emitter terminals when the emitter current is reduced to zero by means of a reverse emitter base voltage, i.e.