BUT11A1
Abstract: Power Bipolar Transistors bu2708dx BU2725DX BU1508AX BU4506AX BU2532 BU4506AF BU2720DX BU2527
Contextual Info: LEADED PACKAGES VcESM V 1500 tf lc lc (DC) sat. max. (A) 2.5 (A) 2 fas) 0.9 S0T82 S0T78 (T0220AB) S0T186A S0T186 (isolated S0T199 T0220AB) BU505 BU505D BU505F BU505DF BU506 BU506D BU506F BU506DF S0T399 (TOP3D) SOT429 (T0247) SOT430 (TOP3L) TYPICAL APPLICATIONS
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s0t82s0t78t0220abbu505+16bu505dbu506bu506ds0t186as0t186bu505fbut11a1power bipolar transistorsbu2708dxbu2725dxbu1508axbu4506axbu2532bu4506afbu2720dxbu2527
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diode BY229
Abstract: philips Power MOSFET Selection Guide BY229-400, fast recovery diode Philips Semiconductors Power Diodes Selection Guide BY229F800 by329x BY359-1500 PBYR2040CT BY459X-1500 Philips Semiconductors Selection Guide
Contextual Info: Philips Semiconductors Power Diodes Selection Guide Schottky Rectifiers The trend towards lower supply voltages In computers and high speed logic circuits has produced a need for rectifiers with very low forward voltages. The 20 V/ 25 V range of power schottky diodes is intended for use in d.c. To d.c.
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10/700hsbr211-140br211-160br211-180+16br211-200br211-220br211-240br211-260br211-280br211sm-140diode by229philips power mosfet selection guideby229-400, fast recovery diodephilips semiconductors power diodes selection guideby229f800by329xby359-1500pbyr2040ctby459x-1500philips semiconductors selection guide
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BUK444-200
Abstract: 100a mosfet Philips Semiconductors Selection Guide BUK454-60H BUK108-50DL BUK102-50GL BUk2 BUK44 BUK9630-55 BUK9570-55
Contextual Info: Philips Semiconductors TOPFETs Selection Guide VDs Rdsion lD Id V) (fl) (A) (A) Pd (W) TYPE NUMBER TECHNOLOGY ENVELOPE 50 0.028 25 50 125 BUK106-50L TOPFET 50 0.028 25 50 125 BUK106-50LP TOPFET SOT263-O1 50 0.028 25 50 125 BUK116-50L TOPFET SOT426 50
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7-800bbuk446-800bbuk454-800abuk444-800a+16buk454-800bbuk444-800bbuk456-1ooobbuk446-1000bt0220abot186buk444-200100a mosfetphilips semiconductors selection guidebuk454-60hbuk108-50dlbuk102-50glbuk2buk44buk9630-55buk9570-55
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8T134-600E
Abstract: BT136-6000 BTI39X-600E BT134-6000 BT1388-800E TC2-63 LG 500G 8T148W-400R BT137S600E Philips Semiconductors Selection Guide
Contextual Info: Philips Semiconductors Power Thyristors and Triacs Selection Guide SILICON BIDIRECTIONAL TRIGGER DEVICES Ifrm V!BO * BO) = O D = SOD27 (D035) A 2 October 1997 V 28-36 HA 50 BRI00/Ö3 18 Philips Semiconductors Power Thyristors and Triacs Selection Guide
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bri00/ot223ot428t0252+16bt168bwbt168dwbt168ewbt168gwbt169bwbt169dw8t134-600ebt136-6000bti39x-600ebt134-6000bt1388-800etc2-63lg 500g8t148w-400rbt137s600ephilips semiconductors selection guide
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FR4 epoxy glass 1.5mm substrate
Abstract: sheet metal press bending machine
Contextual Info: MOUNTING INSTRUCTIONS page Axial-leaded devices 562 SOT54 T092 563 SOT82 564 SOT78 (T0220AB); SOT186A 567 SOT223; SOT428; SOT4Q4 572 Philips Semiconductors Mounting instructions Axial-ieaded devices GENERAL DATA AND INSTRUCTIONS General rules Excessive forces or temperature applied to a diode may
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t0220abot186aot223ot428+2fr4 epoxy glass 1.5mm substratesheet metal press bending machine
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