SOT199 Search Results

transistor bu508af

Abstract: bu508af philips
Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU508AF GENERAL DESCRIPTION High voltage, high-speed switching npn transistors in a fully isolated SOT199 envelope, primarily for use in horizontal deflection circuits of colour television receivers.

41ba

Abstract: BUW13AF BUW13F UBC098 sot199
Contextual Info: Product specification Philips Semiconductors BUW13F; BUW13AF Silicon diffused power transistors High-voltage, high-speed, glass-passivated npn power transistor in a SOT199 envelope intended fo r use in converters, inverters, switching regulators, motor control systems, etc.

Contextual Info: PHILIPS INTERNATIONAL SLE J> • 711DÛ2b GCm33SG 4b2 « P H I N Philips Components BDV64F/64AF/64BF/64CF r"33"^ Data sheet status Product specification date of issue December 1990 PNP Silicon Darlington power transistors DESCRIPTION PINNING - SOT199 PIN 1

Contextual Info: N AUER PHILIPS/DISCRETE b^E D • bb53T31 0D2BEB7 b23 I IAPX L BU705F BU705DF SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed switching npn power transistors in a SOT199 envelope intended fo r use in horizontal deflection circuits o f television receivers. The BU705DF has an integrated efficiency diode.

Contextual Info: Philips Components BDV66AF/66BF/66CF/66DF D a ta s h e e t statu s Product specification d a te of issue December 1990 PNP Darlington power transistors PINNING - SOT199 DESCRIPTION PIN 1 2 3 PNP epitaxial base Darlington transistors for audio output stages

bs33

Abstract: BDV67CF ZH09 BDV67AF BDV67BF BDV67DF NPN POWER DARLINGTON TRANSISTORS
Contextual Info: Philips Components BDV67AF/67BF/67CF/67DF Data sheet status Product specification date of Issue December 1990 NPN Darlington power transistors PINNING - SOT199 DESCRIPTION DESCRIPTION PIN N P N epitaxial ba se Darlington transistors for au dio output stages

Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU508DX GENERAL DESCRIPTION High voltage, high-speed switching npn transistors in a fully isolated SOT199 envelope with integrated efficiency diode, primarily Tor use in horizontal deflection circuits of colour television receivers.

10LC1

Abstract: BUV90F CAR IGNITION
Contextual Info: Philips Semiconductors Product specification Silicon Diffused Darlington Power Transistor BUV90F GENERAL DESCRIPTION High-voltage, monolithic npn power Darlington transistor in a SOT199 envelope intended for use in car ignition systems, DC and AC motor controls, solenoid drivers, etc.

Contextual Info: Philips Semiconductors Product specification Silicon diffused power transistors BUW13F; BUW13AF DESCRIPTION High-voltage, high-speed, glass-passivated NPN power transistor in a SOT199 package. o APPLICATIONS • Converters • Inverters nn • Switching regulators

bu508df

Abstract: IBM REV 2.8 all ic data BU508DF equivalent all ic datasheet in one pdf file curve tracer BU508AD
Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU508DF GENERAL DESCRIPTION High voltage, high-speed switching npn transistors in a fully isolated SOT199 envelope with integrated efficiency diode, primarily for use in horizontal deflection circuits of colour television receivers.

Contextual Info: N AMER PHILIPS/DISCRETE b^E D • bb53T31 0026555 6bl ■ APX BUW13F BUW13AF SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistor in a SOT199 envelope intended fo r use in converters, inverters, switching regulators, m otor control systems, etc.

BU508AF equivalent

Abstract: transistor bu508af transistor bu508af equivalent transistor BU508AF Data- sheet bu508af datasheet curve tracer all ic datasheet in one pdf file IBM REV 2.8 transistor fall time BU508AD
Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU508AF GENERAL DESCRIPTION High voltage, high-speed switching npn transistors in a fully isolated SOT199 envelope, primarily for use in horizontal deflection circuits of colour television receivers.

711D

Contextual Info: PHILIPS INT ER NATIONAL Philips Components • 711002b 00M33bû bT2 « P H I N BDV65F/65AF/65BF/65CF Data sheet status SbE ]> Product specification NPN Silicon Darlington power transistors date of issue December 1990 PINNING - SOT199 DESCRIPTION PIN 1 2 3

UBC013

Abstract: buw12af BUW12F BUW12A
Contextual Info: Philips Semiconductors Product specification Silicon diffused power transistors BUW12F; BUW12AF High-voltage, high-speed, glass-passivated npn power transistor in a SOT199 envelope intended fo r use in converters, inverters, switching regulators, m otor control systems, etc.

Contextual Info: MOUNTING AND SOLDERING INSTRUCTIONS page TO126/SOT82 768 SOT186/A; SOT78 T0220AB 772 SOT199/SOT429 (TC>247)/SOT339 (TOP3D) 776 Philips Semiconductors Power Bipolar Transistors Mounting and Soldering GENERAL DATA AND INSTRUCTIONS FOR T0126/S0T82 When the driven nut or screw is in direct contact with a

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Abstract: bu508af philips
Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU508AF GENERAL DESCRIPTION High voltage, high-speed switching npn transistors in a fully isolated SOT199 envelope, primarily for use in horizontal deflection circuits of colour television receivers.

BU508DF

Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU508DF GENERAL DESCRIPTION High voltage, high-speed switching npn transistors in a fully isolated SOT199 envelope with integrated efficiency diode, primarily for use in horizontal deflection circuits of colour television receivers.

Contextual Info: PH I L I P S SbE D INTERNATIONAL 711002b 0043304 Ö4S H P H I N Philips Components BDV66AF/66BF/66CF/66DF Data sheet status Product specification date of issue December 1990 PNP Darlington power transistors 7^ 3 3 - 3 / PINNING - SOT199 D ESCRIPTIO N PIN 1

Contextual Info: N AP1ER PHILIPS/DISCRETE b'lE D bbS3*131 002633^ blT I IAPX BUW12F BUW12AF SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistor in a SOT199 envelope intended fo r use in converters, inverters, switching regulators, m otor control systems, etc.

Contextual Info: Philips Component* BDV64F/64AF/64BF/64CF Datasheet status Product specification PNP silicon Darlington power transistors date of issue December 1990 PINNING - SOT199 DESCRIPTION PIN 1 2 3 PNP epitaxial base transistors in a m onolithic Darlington circu it fo r

BDV65CF

Contextual Info: Philips Com ponents BDV65F/65AF/65BF/65CF D a ta s h e e t statu s Product specification d a te o f issue December 1990 NPN silicon Darlington power transistors PINNING - SOT199 DESCRIPTION PIN NPN epitaxial base transistors in a monolithic Darlington circuit for

bu508df

Contextual Info: N AUER PHILIPS/DISCRETE b=lE D bbS3T31 0D2fl2?D 325 IAPX BU508AF BU508DF SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed switching npn transistors in a fu lly isolated SOT199 envelope w ith integrated efficiency diode fo r the BU508DF , prim arily intended fo r use in horizontal deflection

ba7 transistor

Abstract: BUV90F lg system ic
Contextual Info: Product specification Philips Semiconductors Silicon Diffused Darlington Power Transistor BUV90F GENERAL DESCRIPTION High-voltage, monolithic npn power Darlington transistor in a SOT199 envelope intended for use in car ignition systems, DC and AC motor controls, solenoid drivers, etc.

Contextual Info: [ I b b S S ^ l 0013701 T BUP23BF BUP23CF DEVELOPMENT DATA This data sheet contains advance Information and specifications are subject to change without notice. ;_ / N AUER PHILIPS/DISCRETE 25E D Y '3 3 - U SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistor in a SOT199 envelope intended fo r