b0948
Abstract: b0946 BD944 philips b0944 m lc 945 bd946 BD944 T 948 BD943 BD948
Contextual Info: BD944 BD946 BD948 PHILIPS IN TE RN AT IO NAL 5bE ]> • 711DûSb 00430ÔM SILICON EPITAXIAL BASE POWER TRANSISTORS 0 T2 ■ I P H I N T *33 ~ P-IM-P silicon transistors in a plastic envelope intended fo r use in audio ou tput stages and general purpose amplifiers. N-P-N complements are BD943; 945 and 947.
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bd944bd946bd948711002b+7bd943b0948b0946bd944 philipsb0944m lc 945t 948
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bgjg
Abstract: transistor T philips 2322 733 BLF542 UFU370 3a0c 2222 030 capacitor philips philips potentiometer 43t transistor 3909
Contextual Info: Philips Semiconductors_ Product specification UHF power MOS transistor PHILIPS INTERNATIONAL FEATURES • • • • • • T " 3 <î?~0 cÎBLF542 5tiE D • 711DflSb 0D43TS4 5T3 ■ PHIN PIN CONFIGURATION High power gain Easy power control
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-0ciblf5420d43ts4ot171pinning-sot171+12mba931mra971bgjgtransistor tphilips 2322 733blf542ufu3703a0c2222 030 capacitor philipsphilips potentiometer43t transistor3909
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8uk453
Abstract: BUK453-60A BUK453-60B T0220AB
Contextual Info: PHILIPS IN T E R NA TI ON AL bSE D B 711Dfl2b D D m O B L Philips Semiconductors PowerMOS transistor G EN ERA L DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies
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7110fi2bbuk453-60a/bt0220abbuk453+38uk453buk453-60abuk453-60b
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X3A-BFT93
Abstract: BFQ23 philips bfq23 BFQ24 BFT93
Contextual Info: "P3M ÌO PNP 5 GHz wideband transistor crystal P h ilip s S e m icon d u ctors PHILIPS INTERNATIONAL X3A-BFT93 711DfiSb OOMblCH T7M SbE ]> DESCRIPTION P rod u ct sp ecification M E C H A N IC A L DATA PN P crystal used in BFQ23 SOT37 , BFQ24 (TO-72) and BFT93 (SOT23). Crystals are supplied as whole
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x3a-bft93bfq23bfq24bft93+2urv-3-5-52/733philips bfq23
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ht 25 transistor
Abstract: BUK638-500B
Contextual Info: PHILIPS INTERNATIONAL bSE T> m 711D62L. DDfc,4311 Philips Semiconductors PowerMOS transistor Fast recovery diode FET_ GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. FREDFET with fast recovery
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buk638-500b711dflsbodb431sht 25 transistor |
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BUK543
Abstract: BUK543-60A BUK543-60B TTA10
Contextual Info: PHILIPS INTERNATIONAL bSE D • 711DflSb ODbMlflb 54T ■ PHIN Philips Semiconductors Product Specification PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic Kill-pack
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buk543-60a/b-sot186buk543ds10n+3buk543-60abuk543-60btta10
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thyristor TAG 103 X
Abstract: thyristor TAG 103 Thyristor TAG TAG thyristor Thyristor TAG 22 400 thyristor st 103 BT150 U-09 thyristor TAG 13 Thyristor TAG 03 400
Contextual Info: PHILIPS INTERNATIONAL bSE 3> WM 711Dß2b 0Gfci23S0 bb2 • P H I N I - J BT150 k _ THYRISTORS Glass-passivated th yristo r in T 0-220A B envelope, featuring sensitive gate triggering as low as 200 juA.
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0l23sbt150o-220abo-22qab+10m2678thyristor tag 103 xthyristor tag 103thyristor tagtag thyristorthyristor tag 22 400thyristor st 103u-09thyristor tag 13thyristor tag 03 400
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D441
Abstract: BD436 437 bd 8043 BD439 MHC11 BD433 BD434 BD435 BD437
Contextual Info: Philips Semiconductors Preliminary specification Silicon epitaxial-base transistors PHILIPS INTERNATIONAL DESCRIPTION SbE D • 711DfiSb □D4SclDti *153 ■ P H I N QUICK REFERENCE DATA SYMBOL ^CES PINNING - TO-126 SOT32 DESCRIPTION 1 emitter 2 collector
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bd433/435/437/439/441o-126bd434bd436+12bd438bd440bd442711dflsbbd433d441437 bd8043bd439mhc11bd435bd437
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MCL T1-1
Abstract: MAB8048 PCF84C12 PCF84C121 PCF84C121P PCF84C121T S020
Contextual Info: D EV ELO P M EN T DATA 34E m This data sheet contains advance information and specifications are subject to change without notice. _ 711Dfl2b 0011455 S I | PCF84C121 PHILIPS INT ER NATIONAL _ SINGLE-CHIP 8-BIT M ICROCONTROLLER WITH 8 B Y T E S EEPROM
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711002bg0114sspcf84c121pcf84c12+67110fl2bmcl t1-1mab8048pcf84c121ppcf84c121ts020
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BUK637-400B
Contextual Info: PHILIPS IN TE RN AT IO NA L bSE ]> • 711DÖSb 0DbM3Gl Philips Semiconductors PowerMOS transistor Fast recovery diode FET GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. FREDFET with fast recovery reverse diode, particular!/ suitable
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buk637-400b |
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LTN211
Abstract: LXL211-G
Contextual Info: PHILIPS INTERNATIONAL Philips Components Datasheet status Product specification date of issue July 1990 711DÖ2b DGSTlbM 752 bOE D LXL211-G PHIN rW /-?° Electro-luminescent backlight panel QUICK REFERENCE DATA DEVICE DESCRIPTION 1 3 .3 x 6 3 .5 mm Lit area dim ensions
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711dfl2blxl211-gltn2117z2293s+2100vrms60smax
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philips zener diode c24
Abstract: SOD-18 philips bzx70 zener diode c43 BZX70 philips zener diode c12 BZX70-C7V5 DIODE BZX70 BZX70-C75 c22 zener philips 43c56
Contextual Info: BZX70 SERIES MAINTENANCE TYPE P H IL IP S J ib E _ p INTERNATIONAL • 711D6Sb 0 am b 7 b ^ h37 M P H I N T - O h l3 REGULATOR DIODES A range o f diffused silicon diodes in plastic envelopes, intended for use as voltage regulator and transi ent suppressor diodes in medium power regulators and transient suppression circuits.
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bzx70711d6sbbzx70-c7v5bzx70-c75+8od-18philips zener diode c24sod-18philips bzx70 zener diode c43philips zener diode c12diode bzx70c22 zener philips43c56
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m3303
Abstract: 10a ultra fast diode M3306 BYR34 BYR34-500 M3299
Contextual Info: SbE D • 711DflSb DDmSSfl IPHIN T'lfl DEVELOPMENT DATA T h is d a ta she e t c o n ta in s BYR34 SERIES advance in fo r m a t io n and s p e c ific a tio n s are s u b je c t to ch a n g e w it h o u t n o tic e . PHILIPS INTER N A T I O N A L ULTRA FAST RECOVERY DOUBLE RECTIFIER DIODES
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711dflsbbyr34t-03-/7711002b+6t-03-17m330310a ultra fast diodem3306byr34-500m3299
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24-character
Abstract: C100 C101 C120 LTA342F-11 LTA342R-11
Contextual Info: PHILIPS INTERNATIONAL Data sheet status Product specification date of issue July 1990 bO E D • 711DÔEb 00S700fi LTA3 4 2 T4E IPHIN 7- V /- 3 S Liquid Crystal Display DEVICE DESCRIPTION The LTA342 is a 24-character, 2-line dot matrix display. Typical applications include hand held equipment and
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711065blta34224-character711gfl2b+60057d1bc100c101c120lta342f-11lta342r-11
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P3Q22V10-7A
Abstract: P3Q22V10-7D P3Q22V10-7N Pal programming 22v10
Contextual Info: PHILIPS INT ERNATIONAL bSE J> m 711DflEb O D b i n S 3SR • P H I N Philip» Sem iconductors Low Voltage specification 3 Volt BiCMOS Versatile PAL P3Q22V10-7 DESCRIPTION FEATURES
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711dflebp3q22v10p3q22v10-7100ma+724-pinp3q22v10-7n0410dp3q22v10-7a0401fp3q22v10-7dpal programming 22v10
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74F377
Abstract: 74F377A F373 F374
Contextual Info: PHILIPS INTERNATIONAL , - SflE D . , v , ^ nv« . n « . ••vuuvw ■ 711D0Eb 0052174 045 « P H I N rroauci«pvem vw m ni Octal D-type flip-flop with enable 74F377/377A FEATURES • High impedance inputs for reduced loading 20pA in Low and High states
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74f377/377af377a74f377500ns+374f377af373f374
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amplifier blw96
Abstract: BLW96 HF power amplifier PR37 RESISTOR BLW96 philips blw96 PHILIPS 4312 amplifier PR37 RESISTOR pr37 PHILIPS capacitors 0.1 mf A03414
Contextual Info: PHILIPS INTERNATIONAL LSE D C3 711DÛ5L QDbBMlE 33b BLW96 PHIN H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-A, AB and B operated high power industrial and m ilitary transmitting equipm ent in the h.f. and v.h.f. band. The transistor presents
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blw967110fl2bddb3453amplifier blw96+8blw96 hf power amplifierpr37 resistorphilips blw96philips 4312 amplifierpr37resistor pr37philips capacitors 0.1 mfa03414
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J108
Abstract: J109 J110 PZFJ108 PZFJ109 PZFJ110
Contextual Info: • 711Dfl2b OObflOMa 414 IPHIN Philips Semiconductors Data sheet status Product specification date of issue July 1993 FEATURES • High speed sw itching • Interchangeability o f drain and source connections • Low R d s o ii at zero gate voltage (< 8 £i for PZFJ 108)
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711dfl2bpzfj108/pzfj109/pzfj110pzfj108-sot223+8ot223mbb114pzfj109pzfj110711082bj108j109j110
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THYRISTOR ts 602
Abstract: BYX30-200R BYX31 BYX30 BYX30-600R BYX30-200 INVERTER 50 kW BYX30-600 IEC134 DM51
Contextual Info: BYX30 SERIES T - 0 3 - 1 7 PHILIPS INTERNATIONAL SbE D • 711DfiEh 0041b04 440 « P H I N FAST SOFT-RECOVERY RECTIFIER DIODES • With controlled avalanche Also available to BS9333-F002 D iffu sed s ilic o n d io d e s in D O -4 m e ta l e n v e lo p e s , c a p a b le o f a b s o r b in g tr a n s i e n t s .
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byx30t-03-711dfish0041b04+11bs9333-f002byx30-200byx30-600byx30-200rbyx30-600rnon-repetiti10thyristor ts 602byx31inverter 50 kwiec134dm51
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k426
Abstract: bu 515 BUK426-50A transistor 03e Transistor Bo 17
Contextual Info: PHILIPS 5L.E T> INTERNATIONAL 711DÖ2b D D M m i 5 IPHIN Philips Components D ata sheet status Product specification d ate o f issue March 1991 B U K 4 2 6 - 6 0 A /B PowerMOS transistor 7^ 39- t/ Replaces BUK426-50A/B GENERAL DESCRIPTION N-channel enhancement mode
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buk426-50a/bk426-60a/b-39-i/pinning-sot199+6buk426k426bu 515buk426-50atransistor 03etransistor bo 17
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BU603
Abstract: USA060-1
Contextual Info: 11 PHILIPS INTERNATIONAL 4SE D B 711Dfi2ti ODBOflfl'i 1 Œ P H I N BU603 T'33-/3 — SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistors in a T 0 -2 2 0 envelope intended fo r use in power supplies and deflection circuits fo r colour receivers and monitors.
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711002tbu603t-33-/3o-220+3f33m3t-33-13usa060-1
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RZB12250Y
Contextual Info: / " 3 3 - ! j £ RZB12250Y M AIN TEN AN C E TYPE PHILIPS INTERNATIONAL SbE D • 711Dfl2b DDMbblb 7 n ■PHIN PULSED MICROWAVE POWER TRANSISTOR NPN silicon power transistor fo r use in a common-base, class-C narrowband am plifier in avionics applications.
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BY206
Abstract: BZY88-C3V3 ADB320 BLW32 bzy88c3v3
Contextual Info: bSE D B 711D Û 2L. □□b320S 334 B P H IN BLW32 PHILIPS I N T E R N A T I O N A L _ _ U.H.F. LINEAR POWER TRANSISTOR N-P-N silicon planar epitaxial transistor prim arily intended for use in linear u .h .f. am plifiers for television transmitters and transposers. The excellent d.c. dissipation properties for class-A operation
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b320sblw32711062bddb3213+67z777077z77708by206bzy88-c3v3adb320bzy88c3v3
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BTW42-600R
Abstract: TSM 1250 1000R mml 600 600R BTW38 BTW42 BTW42-600RC
Contextual Info: PHILIPS bSE D INTERNA TI ON AL Jl B 711Dfl2b DDb5431 3TD • P H I N BTW42 SERIES THYRISTORS Glass-passivated silicon thyristors in metal envelopes w ith high d V p /d t capabilities. They are intended fo r use in power control circuits and switching systems where high transients can occur e.g. phase
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ddbs43ibtw421000rbtw38+5btw42-600rtsm 1250mml 600600rbtw42-600rc
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