bgjg
Abstract: transistor T philips 2322 733 BLF542 UFU370 3a0c 2222 030 capacitor philips philips potentiometer 43t transistor 3909
Contextual Info: Philips Semiconductors_ Product specification UHF power MOS transistor PHILIPS INTERNATIONAL FEATURES • • • • • • T " 3 <î?~0 cÎBLF542 5tiE D • 711DflSb 0D43TS4 5T3 ■ PHIN PIN CONFIGURATION High power gain Easy power control
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-0ciblf5420d43ts4ot171pinning-sot171+12mba931mra971bgjgtransistor tphilips 2322 733blf542ufu3703a0c2222 030 capacitor philipsphilips potentiometer43t transistor3909
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MRA359
Abstract: MDA536 BLV103 MRA364
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLV103 UHF power transistor Product specification March 1993 Philips Semiconductors Product specification UHF power transistor FEATURES • Internal matching for an optimum wideband capability and high gain • Emitter-ballasting resistors for
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4312 020 36640
Abstract: BLF543 MDA489 MRA991
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLF543 UHF power MOS transistor Product specification October 1992 Philips Semiconductors Product specification UHF power MOS transistor FEATURES BLF543 PIN CONFIGURATION • High power gain • Easy power control • Good thermal stability
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blf543mba931ot1714312 020 36640+2mda489mra991
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mrc102
Abstract: MRC100 mrc101 MRC103 BLV194
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLV194 UHF power transistor Product specification January 1993 Philips Semiconductors Product specification UHF power transistor FEATURES • Emitter-ballasting resistors for an optimum temperature profile • Gold metallization ensures
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blv194ot171mrc102mrc100+2mrc101mrc103
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Philips 2222-030
Abstract: philips resistor 2322 4312 020 36640 philips catalog potentiometer 100 pf, ATC Chip Capacitor 100A BLF543 enamelled copper wire MDA487 class b power transistors datasheet current gain IEC -320 C14
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLF543 UHF power MOS transistor Product specification File under Discrete Semiconductors, SC08b October 1992 Philips Semiconductors Product specification UHF power MOS transistor FEATURES BLF543 PIN CONFIGURATION • High power gain
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blf543sc08bmbb072mba931+10ot171philips 2222-030philips resistor 23224312 020 36640philips catalog potentiometer100 pf, atc chip capacitor 100aenamelled copper wiremda487class b power transistors datasheet current gainiec -320 c14
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MRA250
Abstract: BLF522 MRA990
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLF522 UHF power MOS transistor Product specification September 1992 Philips Semiconductors Product specification UHF power MOS transistor FEATURES BLF522 PIN CONFIGURATION • High power gain • Easy power control • Gold metallization
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Contextual Info: Philips Semiconductors ^53= 131 0030 1 2 b TO? • APX ^roductspecjfjcat^ UHF power MOS transistor BLF544 N AUER PHILIPS/DISCRETE FEATURES b'iE D PIN CONFIGURATION • High power gain • Easy power control • Good thermal stability / • Gold metallization ensures
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BJE 42
Abstract: 9 BJE 42
Contextual Info: Philips S em iconductors bbS3R31 003010b H R Ap y Product spec if ication UHF power MOS transistor BLF542 N AMER PHILIPS/DISCRETE FEATURES bRE T> PIN CONFIGURATION • High power gain < • Easy power control • Gold metallization '" " “v o • Good thermal stability
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bbs3r31003010bblf542mba931+4mra732mra971bje 429 bje 42
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BLF542
Abstract: MBB778
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLF542 UHF power MOS transistor Product specification File under Discrete Semiconductors, SC08b October 1992 Philips Semiconductors Product specification UHF power MOS transistor FEATURES BLF542 PIN CONFIGURATION • High power gain
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1 Fp 33 transistor
Abstract: MRA552 MRA553 MRA554 BLV193 SOT171 101 DISC CAPACITOR definition CAPACITOR 2222 427 MRA555 MRA560
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLV193 UHF power transistor Product specification March 1993 Philips Semiconductors Product specification UHF power transistor FEATURES • Emitter ballasting resistors for an optimum temperature profile • Gold metallization ensures
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blv193ot1711 fp 33 transistormra552+7mra553mra554sot171101 disc capacitor definitioncapacitor 2222 427mra555mra560
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mda540
Abstract: BLV100
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLV100 UHF power transistor Product specification March 1993 Philips Semiconductors Product specification UHF power transistor FEATURES BLV100 PIN CONFIGURATION • Internal input matching to achieve high power gain • Ballasting resistors for an optimum
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BLF542
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLF542 UHF power MOS transistor Product specification October 1992 Philips Semiconductors Product specification UHF power MOS transistor FEATURES BLF542 PIN CONFIGURATION • High power gain • Easy power control halfpage
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BLF542
Abstract: UBB776
Contextual Info: Philips Semiconductors 003010b HR M APX Product specification UHF power MOS transistor BLF542 N AMER PHILIPS/DISCRETE FEATURES b^E T> PIN CONFIGURATION • High power gain • Easy power control o • Gold metallization • Good thermal stability • Withstands full load mismatch
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MRA253
Abstract: BLF522 MRA24S P101 saia
Contextual Info: Philip^emiconducto^ H ^ 53^ 31 OOBOOT? 3flb H A P X Pr<KiuctsPecification UHF power MOS transistor ^ BLF522 ^ FEATURES N AMER PHILIPS/DISCRETE b'lE T> PIN CONFIGURATION • High power gain • Easy power control r- o • Gold metallization • Good thermal stability
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blf522ot171pinning-sot171mbb072+7mba931mba379ura24smra253mra24sp101saia
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