SOT171 Search Results

Contextual Info: SOT171A CDFM6; blister pack; standard product orientation 12NC ending 112 Rev. 1 — 18 October 2012 Packing information 1. Packing method Blister cover ESD Label Foam Blister bottom ESD Label Printed plano box Space for additional label Preprinted ESD warning

BLV59

Contextual Info: , Jnc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973 376-2922 (212)227-6005 FAX: (973) 376-8960 UHF linear power transistor BLV59 PINNING-SOT171A FEATURES « Internal input matching to achieve an optimum wideband capability and high power gain

BLV97CE

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLV97CE UHF power transistor Product specification March 1993 Philips Semiconductors Product specification UHF power transistor BLV97CE FEATURES DESCRIPTION • Internal input matching to achieve high power gain NPN silicon planar epitaxial transistor in a SOT171

2222 031 capacitor philips

Abstract: BLW898
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLW898 UHF linear power transistor Product specification Supersedes data of 1995 Oct 04 1996 Jul 16 Philips Semiconductors Product specification UHF linear power transistor BLW898 PINNING SOT171A FEATURES • Internal input matching for wideband operation and high

sot171a

Contextual Info: PDF: 1999 Apr 16 Philips Semiconductors Package outline Flanged ceramic package; 2 mounting holes; 6 leads SOT171A D A F D1 U1 B q C w2 M C M H1 c b 2 4 6 E1 H E U2 1 3 5 w1 M A M B M p A Q w3 M b1 e 5 10 mm scale DIMENSIONS millimetre dimensions are derived from the original inch dimensions

BLV97CE

Contextual Info: , One. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. UHF power transistor BLV97CE FEATURES DESCRIPTION • Internal input matching to achieve high power gain NPN silicon planar epitaxial transistor in a SOT171

transistor t A968

Abstract: A1380 transistor
Contextual Info: DISCRETE SEMICONDUCTORS DAT M3D076 BLF542 UHF power MOS transistor Product specification Supersedes data of 1998 Jan 08 2003 Sep 18 Philips Semiconductors Product specification UHF power MOS transistor BLF542 PINNING - SOT171A FEATURES • High power gain

BLF544

Abstract: GP2012 philips resistor 2322 724 MRA992
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D076 BLF544 UHF power MOS transistor Product specification Supersedes data of 1998 Jan 21 2003 Sep 18 Philips Semiconductors Product specification UHF power MOS transistor BLF544 PINNING - SOT171A FEATURES • High power gain

BLF542

Abstract: PHILIPS 4312 amplifier
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D076 BLF542 UHF power MOS transistor Product specification Supersedes data of 1998 Jan 08 2003 Sep 18 Philips Semiconductors Product specification UHF power MOS transistor BLF542 FEATURES PINNING - SOT171A • High power gain

821 ceramic capacitor

Abstract: philips catalog potentiometer philips resistor 2322 BLF544 MBK442
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D076 BLF544 UHF power MOS transistor Product specification Supersedes data of October 1992 1998 Jan 21 Philips Semiconductors Product specification UHF power MOS transistor BLF544 PINNING - SOT171A FEATURES • High power gain

BLV59

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D076 BLV59 UHF linear power transistor Product specification Supersedes data of March 1993 1998 Jan 09 Philips Semiconductors Product specification UHF linear power transistor BLV59 FEATURES PINNING - SOT171A • Internal input matching to achieve an optimum

BLV97

Abstract: IEC134
Contextual Info: PHILIPS INTERNATIONAL MIE D m 711002b Q0S73ÔÔ ö ‘' L IPHIN BLV97 r - 3 3 - // UHF POWER TRANSISTOR NPN silicon planar epitaxial transistor in SOT171 envelope intended for use in class-B operated base station transmitters in the 900 MHz communications band.

Contextual Info: DISCRETE SEMICONDUCTORS DAT M3D076 BLF544 UHF power MOS transistor Product specification Supersedes data of 1998 Jan 21 2003 Sep 18 Philips Semiconductors Product specification UHF power MOS transistor BLF544 PINNING - SOT171A FEATURES • High power gain

BLW898

Abstract: philips resistor 2322 156 795-820 a 1757 transistor SOT171 Tekelec TO
Contextual Info: Philips Semiconductors Product specification UHF linear power transistor BLW898 FEATURES PINNING SOT171A • Internal input matching for wideband operation and high power gain PIN • Polysilicon emitter ballasting resistors for an optimum temperature profile

bgjg

Abstract: transistor T philips 2322 733 BLF542 UFU370 3a0c 2222 030 capacitor philips philips potentiometer 43t transistor 3909
Contextual Info: Philips Semiconductors_ Product specification UHF power MOS transistor PHILIPS INTERNATIONAL FEATURES • • • • • • T " 3 <î?~0 cÎBLF542 5tiE D • 711DflSb 0D43TS4 5T3 ■ PHIN PIN CONFIGURATION High power gain Easy power control

71009 SB

Abstract: BLV100 71108Sb 35 W 960 MHz RF POWER TRANSISTOR NPN
Contextual Info: . Philips Semiconductors • 7110asb DOtaBlDQ T71 ■ I P H I N 1 •*J PHILIPS INTERNATIONAL UHF power transistor _ . , . Product specification bSE D BLV100 PIN CONFIGURATION FEATURES • Internal input matching to achieve high power gain • Ballasting resistors for an

transistor 603 47e

Abstract: BTB 600 BR BLV103 71009 SB
Contextual Info: Philips Semiconductors 7110f l 5b D Q b B ll^ T 4fl ^ B P H IN Product specification UHF power transistor BLV103 bS E T> PHILIPS INTERNATIONAL FEATU RES • Internal matching for an optimum wideband capability and high gain • Emitter-ballasting resistors for

BLV98

Contextual Info: 41E D PHILIPS INTERNATIONAL • 711002h 002740b b H P H I N '' BLV98 r-33-n U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor in SOT-171 envelope intended for use in class-B operated base station transmitters in the 900 M Hz communications band.

BLV194

Contextual Info: 7110ô2fci DDb313û TTT « P H I N bSE D PHILIPS INTERNATIONAL UHF power transistor Product specification Philips Semiconductors BLV194 Q U IC K REFERENCE DATA RF performance at T h = 25 °C in a common emitter test circuit. FEATURES • Emitter-ballasting resistors for an

LPC2148 i2c

Abstract: BGB210S lpc2148 interfacing 2.8" TFT LCD DISPLAY BGB210 embedded c code to interface lpc2148 with sensor BGW200 TDA8932T tda8920bj NXP PN531 TDA8947J equivalent
Contextual Info: Building blocks for vibrant media Highlights of the NXP product portfolio Building blocks for vibrant media  At NXP Semiconductors, the new company founded by Philips, we’re driven by a single purpose — to deliver vibrant media technologies that create better sensory experiences.

BLW898

Abstract: tv schematic diagram PHILIPS transposers MGH829 linear amplifier 470-860 AN98015 china tv schematic diagram 470-860 mhz Power amplifier w
Contextual Info: APPLICATION NOTE A broadband 3 W amplifier for band IV/V TV transposers based on the BLW898 AN98015 Philips Semiconductors A broadband 3 W amplifier for band IV/V TV transposers based on the BLW898 CONTENTS 1 ABSTRACT 2 INTRODUCTION 3 AMPLIFIER ELECTRICAL DESIGN OBJECTIVES

AgCu28

Contextual Info: CHAPTER 7 ENVIRONMENTAL INFORMATION page Introduction 7-2 Explanation of the tables 7-2 General safety remarks 7-5 Substances not used by Philips Semiconductors 7-6 Disposal and recycling 7-7 General warnings 7-7 Chemical content tables: Diodes Transistors

irf9110

Abstract: SOT-123 IRF224 irf113 1rf48 BUZ10 BUZ63 IRF9122 irfl33 IRF034
Contextual Info: - 250 - Ta=25<1C f m € tt € t Vd s or 4- V d g Vg s (V) (V) If l: * /CH * /CH (A) (W) V g s th) 1DSS Jg s s Pd Id max (nA) Vg s (V) C m A) Vd s (V) (V) (V) Id (mA) ff] % ft 1± Ciss (max) *typ V g s ( 0 ) (V) *typ (A) Id (A) 140* -25 TO-220AB 190* 25 TO-220AB

SOT-123

Abstract: IRF9110 PHILIPS TO220 blf544b BLF246 BLF348 irc224 IRC350 IRC530 IRC832
Contextual Info: - % % A f ft i Vd s or Vd g tt £ i T Vg s Ta=25'C) «É. Ig s s Id Pd * /C H * /CH (W) Vds (V) Id (nA) g fs Io(on) C ís s Coss ft B m ♦typ Vg s (V) (0) Id (A) * ty p (A) Vg s (V) *typ (S) Id (max) (max) (max) % (A) (pF) (pF) (pF) Vd s (V) % (V) P '200 ± 2 0