BLF242 Search Results

Contextual Info: OOETTBfci MED M l A P X Philips Semiconductors Product specification HF/VHF power MOS transistor BLF242 1 N AMER PHIL IPS/DISCRETE h^E D PIN CONFIGURATION FEATURES • High power gain • Low noise • Easy power control • Good thermal stability • Withstands full load mismatch

MRF255 equivalent

Abstract: motorola mrf Motorola transistors MRF mrf5015 mrf184 MRF151G F2012 DU1230P uf2810p MRF255
Contextual Info: CROSS REFERENCE Click on part No. to retrieve data sheet . 5/22/2005 Motorola POLYFET PHILIPS POLYFET MA/COM PHI POLYFET MRF134 MRF136 MRF137 MRF141 MRF141G PRF134 PRF136 PRF137 SM401 SR401 BLF145 BLF147 BLF175 BLF177 BLF242 MRF148 MRF151 MRF151G SA741 SM341

Philips 809 08003

Abstract: SOT123 Package BLF242 100b choke
Contextual Info: Philips Semiconductors tità B IB l OOETÌBLi MED M i A P X Product specification HF/VHF power MOS transistor BLF242 N AUER PHILIPS/DISCRETE h^E » PIN CONFIGURATION FEATURES • High power gain • Low noise • Easy power control • Good thermal stability

Contextual Info: BLF2425M7L140; BLF2425M7LS140 Power LDMOS transistor Rev. 3 — 6 September 2012 Product data sheet 1. Product profile 1.1 General description 140 W LDMOS power transistor for Industrial, Scientific and Medical ISM applications at frequencies from 2400 MHz to 2500 MHz.

Contextual Info: BLF2425M6L180P; BLF2425M6LS180P Power LDMOS transistor Rev. 2 — 20 September 2012 Product data sheet 1. Product profile 1.1 General description 180 W LDMOS power transistor for various applications such as ISM and industrial heating at frequencies from 2400 MHz to 2500 MHz.

BLF242

Contextual Info: BLF242 HF-VHF POWER MOSFET N-Channel Enhancement Mode DESCRIPTION: The ASI BLF242 is intended for use in 28 VDC large signal Applications. PACKAGE STYLE .380 4L FLG B FEATURES INCLUDE: .112 x 45° A S • PG = 16 dB Typical at 175 MHz • Omnigold Metalization System

tp2304

Abstract: TPV3100 TP9383 TP2330 MRF2001 PT9783 PT9780 tp8828f BLY93A mrf 406 application circuit
Contextual Info: ASI Part Number AM1214-100 AM1214-200 AM1214-325 AM80912005 AM80912015 AM80912030 AM80912085 AM80912150 AM81214006 AM81214015 AM81214030 AM81214060 BLF147 BLF175 BLF177 BLF242 BLF244 BLF245 BLF246 BLF278 BLF368 BLU11/SL BLU15/12 BLU20/12 BLU30/12 BLU45/12

Contextual Info: BLF2425M7L140; BLF2425M7LS140 Power LDMOS transistor Rev. 1 — 30 January 2012 Objective data sheet 1. Product profile 1.1 General description 140 W LDMOS power transistor for Industrial, Scientific and Medical ISM applications at frequencies from 2400 MHz to 2500 MHz.

Contextual Info: BLF2425M7L250P; BLF2425M7LS250P Power LDMOS transistor Rev. 3 — 26 February 2013 Product data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor for Industrial, Scientific and Medical ISM applications at frequencies from 2400 MHz to 2500 MHz.

Contextual Info: BLF2425M6L180P; BLF2425M6LS180P Power LDMOS transistor Rev. 1 — 7 February 2012 Objective data sheet 1. Product profile 1.1 General description 180 W LDMOS power transistor for various applications such as ISM and industrial heating at frequencies from 2400 MHz to 2500 MHz.

Contextual Info: BLF2425M7L100; BLF2425M7LS100 Power LDMOS transistor Rev. 1 — 6 December 2013 Product data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for industrial applications at frequencies from 2300 MHz to 2400 MHz. Table 1. Typical performance

A3120 Pin Configuration

Contextual Info: DISCRETE SEMICONDUCTORS DAT M3D065 BLF242 HF-VHF power MOS transistor Product specification Supersedes data of 1997 Dec 17 2003 Oct 13 Philips Semiconductors Product specification HF-VHF power MOS transistor BLF242 PIN CONFIGURATION FEATURES • High power gain

Contextual Info: BLF2425M7L250P; BLF2425M7LS250P Power LDMOS transistor Rev. 2 — 6 September 2012 Objective data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor for various applications such as ISM and industrial heating at frequencies from 2400 MHz to 2500 MHz.

Contextual Info: BLF2425M8L140; BLF2425M8LS140 Power LDMOS transistor Rev. 1 — 27 August 2013 Product data sheet 1. Product profile 1.1 General description 140 W LDMOS power transistor for Industrial, Scientific and Medical ISM applications at frequencies from 2400 MHz to 2500 MHz.

BLF242

Abstract: MGP149
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D065 BLF242 HF-VHF power MOS transistor Product specification Supersedes data of 1997 Dec 17 2003 Oct 13 Philips Semiconductors Product specification HF-VHF power MOS transistor FEATURES BLF242 PIN CONFIGURATION • High power gain

sot123

Abstract: BLF242 Philips 809 08003
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLF242 HF/VHF power MOS transistor Product specification September 1992 Philips Semiconductors Product specification HF/VHF power MOS transistor FEATURES BLF242 PIN CONFIGURATION • High power gain • Low noise halfpage

7z31

Abstract: Philips 809 08003 SOT123 Package sot123 PINNING-SOT123 BLF242 VHF transmitter circuit T-39-07
Contextual Info: Philips Semiconductors Product specification HF/VHF power MOS transistor PHILIPS INTERNATIONAL FEATURES • • • • • • Sb E 7 13 c! ' t0 7 ' BLF242 D • 711Dfl2fci 0 0 4 3 7 6 4 47T ■ P H I N PIN CONFIGURATION High power gain Low noise Easy power control

BLF242

Contextual Info: , One. TELEPHONE: 973 376-2922 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. (212)227-6005 FAX: (973) 376-8960 HF/VHF power MOS transistor FEATURES BLF242 PIN CONFIGURATION • High power gain » Low noise • Easy power control • Good thermal stability

SD1446

Abstract: SD2910 philips blx15 BLV36 BLW60C st cross reference blw97 SD4575 BLV103 MX0912B350Y
Contextual Info: June 1999 ST CROSS REFERENCE WITH PHILIPS INDUSTRY PART NUMBER BGY916 BLF145 BLF175 BLF177 BLF242 BLF244 BLF245 BLF245B BLF248 BLF278 BLF348 BLF368 BLF378 BLF548 BLU10/12 BLU20/12 BLU30/12 BLU30/28 BLU45/12 BLU60/12 BLU60/28 BLU97 BLU99 BLV12 BLV13 BLV30 BLV31

Contextual Info: BLF2425M7L140; BLF2425M7LS140 Power LDMOS transistor Rev. 3 — 6 September 2012 Product data sheet 1. Product profile 1.1 General description 140 W LDMOS power transistor for Industrial, Scientific and Medical ISM applications at frequencies from 2400 MHz to 2500 MHz.

Contextual Info: BLF242 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)65 V(BR)GSS (V)20 I(D) Max. (A)1.0 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)16# Minimum Operating Temp (øC)

Contextual Info: BLF2425M7L250P; BLF2425M7LS250P Power LDMOS transistor Rev. 2 — 6 September 2012 Objective data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor for various applications such as ISM and industrial heating at frequencies from 2400 MHz to 2500 MHz.

Contextual Info: BLF2425M7L250P; BLF2425M7LS250P Power LDMOS transistor Rev. 4 — 12 July 2013 Product data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor for Industrial, Scientific and Medical ISM applications at frequencies from 2400 MHz to 2500 MHz.

Contextual Info: BLF2425M7L140; BLF2425M7LS140 Power LDMOS transistor Rev. 2 — 20 April 2012 Objective data sheet 1. Product profile 1.1 General description 140 W LDMOS power transistor for Industrial, Scientific and Medical ISM applications at frequencies from 2400 MHz to 2500 MHz.