MBB114 Search Results

Contextual Info: BC264A to D _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _A_ _ _ N-CHANNEL SILICON FIELD-EFFECT TRANSISTORS Symmetrical N-channel planar epitaxial junction field-effect transistors in a plastic TO-92 variant; in­ tended for hi-fi amplifiers and other audio-frequency equipment.

BF247A

Contextual Info: _ s\ BF246A to C BF247A to C _ N-CHANNEL SILICON FIELD-EFFECT TRANSISTORS Symmetrical n-channel planar epitaxial junction field-effect transistors in plastic TO-92 variants, intended for VHF and UHF amplifiers, mixers and general purpose switching.

BB530

Contextual Info: • [3^53131 DDESMTti T47 ■ APX BF245A TO C N AUER PHILIPS/DISCRETE L7E D N-CHANNEL SILICON FIELD-EFFECT TRANSISTORS General purpose symmetrical N-channel planar epitaxial junction field-effect transistors in a plastic TO-92 variant; intended for applications in l.f. and d.c. amplifiers, and in h.f. amplifiers.

BGY41

Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
Contextual Info: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.

MBB114

Abstract: J110 PZFJ108 PZFJ109 PZFJ110
Contextual Info: • 7110fiEb OObflOMfl M m ■ PHIN Philips Semiconductors Data sheet status Product specification date of issue July 1993 FEATURES • High speed sw itching • Interchangeability o f drain and source connections • Low RDS on at zero gate voltage (< 8 £2 for PZFJ108)

BFU309

Contextual Info: titiS3 T31 □□E3 b f l4 H 7 P hilips Sem iconductors APX Prelim inary specification N-channel silicon field-effect transistors , BFU308/309/310 N Af1 FP PHTI TPS/DTSCRETE L71 FEATURES PIN CONFIGURATION • Low noise • Interchangeability of drain and source connections

PMBFJ111

Contextual Info: b b S B 'm 0024DS2 W «APX P h ilip s S e m ic o n d u c to rs P M B F J111/P M B F J112/ PM B FJ113 Data sheet status Product specification date of issue July 1993 N-channel junction FETs N AMER PHILIPS/DISCRETE FEATURES PIN CONFIGURATION PINNING - SOT23

Contextual Info: m b b s a ^ i □□E4D7ti 021 * a p x n amer p h i l i p s /d i s c r e t e Philips Semiconductors D a ta sh eet s tatu s Product specification d a te o f issue Ju ly 1 9 9 3 FEATURES • High speed switching • Interchangeability of drain and source connections

J110

Abstract: PZFJ108 PZFJ109 PZFJ110
Contextual Info: • ^53^31 □ 0 2 4 D 7 C1 DB1 m * P X N A PIER P H I L I P S / D I S C R E T E Philips Semiconductors Data sheet status Product specification date of issue July 1993 FEATURES • High speed sw itching • Interchangeability o f drain and source connections