RX101 Search Results

RX1011B350Y

Abstract: broad-band Microwave Class-C Transistor Amplifiers
Contextual Info: N AMER P H I L I P S / D I S C R E T E bbSB^l ObE D 0 0 1 5 1 7 ^ fi D EVELOPM EN T DATA RX1011B350Y T h is data sheet contains advance inform ation and specifications are subject to change w ith out notice. r-f 33-/S" PULSED MICROWAVE POWER TRANSISTOR NPN silicon planar epitaxial microwave power transistor intended for use in common-base, class-C

Contextual Info: D E VE LO PM EN T DATA OLE D bb53T31 0015175 0 RX1011B250Y This data sheet contains advance information and specifications are subject to change w ithout notice. _ N AMER PHILIPS/DISCRETE - T - S S - I S - PULSED MICROWAVE POWER TRANSISTOR

RX101

Contextual Info: RIFU RX1010 Ideal f o r 433.92 MHz, 3 V R eceivers in E urope I-E TS 300 220 • H igh-Sensitivity P assive D esign with N o R F O scillation • B aseband D ata R ate o f 10 kb/s • Sim ple to A pply w ith L ow E xternal P arts C ount • Rugged, Surface-M ount Package with 130 m m 2 Footprint

Contextual Info: N AMER PHILIPS/DISCRETE ObE D b b s a ^ i O D 1S171 a - - DEVELOPMENT DATA 11 This data sheet contains advance information and specifications are subject to change without notice. RX1011B350Y T ? 3 3 ' I G - PULSED MICROWAVE POWER TRANSISTOR NPN silicon planar epitaxial microwave power transistor intended for use in common-base, class-C

Contextual Info: RX1010 433.92 MHz ASH Receiver Ideal fo r 433.92 MHz, 3 V Receivers in Europe I-ETS 300 220 High-Sensitivity Passive Design with No RF Oscillation Baseband Data Rate o f 10 kb/s Simple to Apply with External Parts Count Rugged\ Surface-M ount Package with 130 nan2 Footprint

Contextual Info: RX1010 • Ideal for 433.92 MHz, 3 V Receivers in Europe l-ETS 300 220 • High-Sensitivity Passive Design with No RF Oscillation • 10 kb/s Baseband Data Rate 433.92 MHz A S H Receiver • Simple to Apply with Low External Parts Count • Rugged, Surface-Mount Package with 1.3 cm2 Footprint

RX1010

Abstract: 902-925 rx 433 saw CR2032 MC145028 RX1000
Contextual Info: RX1010 433.92 MHz • • • • • ASH Receiver Ideal for 433.92 MHz, 3 V Receivers in Europe I-ETS 300 220 High-Sensitivity Passive Design with No RF Oscillation Baseband Data Rate of 10 kbps Simple to Apply with External Parts Count Rugged, Surface-Mount Package with 130 mm2 Footprint

MX0912B250Y

Abstract: RV2833B5X RV3135B5X RX1214B150W RX1214B300Y RZ1214B125Y RZ1214B35Y RZ1214B65Y RZ2731B16W MRB11175Y
Contextual Info: N AMER P H I L I P S / D I S C R E T E 5SE 3> • bbSH^! OOltiSBl 0 ■ T'-J3 3 “' ^ / Power Devices 53 MICROWAVE TRANSISTORS TYPE NO. PACKAGE OUTLINE f GHz Vcc (Vi ' U m @ DUTY CYCLE I (%> . Pi. (W> A - ; VC (%) RADAR PULSED L-BAND RZ1214B35Y FO-57C 1.2 - 1.4

transistor f6 13003

Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
Contextual Info: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.

rfm 1207-5

Abstract: 433,92 resonator RP1207-5 433.92 Mhz two-port saw resonator 133524 MPSH10 P1239 RF1172 rx1305 IC rp1102
Contextual Info: Low Power Components Short Form Catalog l Introduction l Selection Guide by Frequency Application l Master Index Sorted by Frequency l Master Index Sorted by Lid Symbol l Typical Radio Types l Superhet Receiver Example l RO Series l RP Series l RF Series l

RX1011B250Y

Contextual Info: DEVELOPMENT ObE data D b b S3 T3 1 N AME R 0015175 PH ILIPS/D ISCRETE nr- PULSED MICROWAVE POWER TRANSISTOR NPN silicon planar epitaxial microwave power transistor intended for use in common-base, class-C broadband pulse power amplifiers operating in the 1.03 to 1.09 GHz frequence range.

CS1000

Abstract: CS1300 IC1001 rx1310 rx2020
Contextual Info: Low-Power Virtual Wire Radio Systems Selection Guide f |X f^ÎÊÎià È Ê âS É ÎÈ Ê ÎÎÊ âÊ ^. D ftM H ttN N i 303.825 Australia, USA Korea, Japan 304.0 315.0 Australia Canada, Italy USA 403.55 418.0 South Africa UK, USA 433.92 ETSI European Regulations,

Contextual Info: N AMER PHILIPS/DISCRETE 5SE D • bbSHiai 0011.231 ■ ^ 3 3 ~ \ Power Devices MICROWAVE TRANSISTORS TYPE NO. PACKAGE OUTLINE < G H z Vcc (V) U 1.2 - 1.4 1.2 -1 .4 1 .2 -1 .4 1.2 - 1.4 1 .2 -1 .4 1.2 - 1.4 1 .2 -1 .4 1.2 - 1.4 1 .2 -1 .4 1.2 - 1.4 42 50

BGY41

Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
Contextual Info: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.