RX1214B300Y |
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Advanced Semiconductor
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Transistor |
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RX1214B300Y |
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NXP Semiconductors
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NPN microwave power transistor - Application: L-band Radar ; Description: L-Band Radar Bipolar RF POWER Transistor ; Duty cycle: 5 %; Efficiency: 40 %; Frequency: 1200 - 1400 MHz; Load power: 320 W; Operating voltage: 50 VDC; Power gain: 8 dB; Pulse width: 150 us |
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RX1214B300Y |
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Philips Semiconductors
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NPN microwave power transistor |
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RX1214B300Y |
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Philips Semiconductors
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Pulsed Microwave Power Transistor |
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RX1214B300Y |
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Unknown
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Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. |
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Scan |
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RX1214B300Y |
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Philips Semiconductors
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NPN microwave power transistor |
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Scan |
PDF
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RX1214B300Y,114 |
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NXP Semiconductors
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NPN microwave power transistor - Application: L-band Radar ; Description: L-Band Radar Bipolar RF POWER Transistor ; Duty cycle: 5 %; Efficiency: 40 %; Frequency: 1200 - 1400 MHz; Load power: 320 W; Operating voltage: 50 VDC; Power gain: 8 dB; Pulse width: 150 us; Package: SOT439A (CDFM2); Container: Blister pack |
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