1S171 Search Results

N413

Abstract: 1S2093 1S12 1S1719 1S2064 1S2305 MA62
Contextual Info: - 270 m 1S1236 1S1719 1S2064 1S2093 1S2305 BTD4 MA62 N413 - % A V bo 100 max <V 3. 4. 2 3. 2 3 max Vb o V) ít Mit SÄ Ä 2 HÄ Ip (A) « 2 2 2 2 2 2 2 2 min 18 18 26 28 26 28 26 max 32 42 32 36 38 40 36 40 3 (M> 200 200 200 50 200 50 100 50 r Vbo Vom(V)

N413

Abstract: J113A 1S2093 28MIN 113B 1S12 1S1719 1S2064 1S2305 MA62
Contextual Info: - 27 0 m 1S1236 1S1719 1S2064 1S2093 1S2305 BTD4 MA62 N413 - % ít Ip « A Mit SÄ Ä 2 HÄ 2 2 2 2 2 2 2 2 Vb o (V) A V bo max min max <V) 18 3. 32 18 4. 42 2 32 3. 26 36 28 38 2 26 3 40 28 36 26 40 3 100 r Vbo max ( M > (VC) 200 0. 1 200 0. 1 200 50 Q. 1

N413

Abstract: 1S2093 1S12 1S1719 1S2064 1S2305 MA62
Contextual Info: - 27 0 m 1S1236 1S1719 1S2064 1S2093 1S2305 BTD4 MA62 N413 - % ít Ip « A Mit SÄ Ä 2 HÄ 2 2 2 2 2 2 2 2 Vb o (V) A V bo max min max <V) 18 3. 32 18 4. 42 2 32 3. 26 36 28 38 2 26 3 40 28 36 26 40 3 100 r Vbo max ( M > (VC) 200 0. 1 200 0. 1 200 50 Q. 1

Contextual Info: N AMER PHILIPS/DISCRETE ObE D b b s a ^ i O D 1S171 a - - DEVELOPMENT DATA 11 This data sheet contains advance information and specifications are subject to change without notice. RX1011B350Y T ? 3 3 ' I G - PULSED MICROWAVE POWER TRANSISTOR NPN silicon planar epitaxial microwave power transistor intended for use in common-base, class-C

TOSHIBA MG150N2YS40

Abstract: mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40
Contextual Info: 小信号トランジスタ SMD ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製 品の誤作動や故障により､生命･身体･財産が侵害されることのないように､購入

hep 154 silicon diode

Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
Contextual Info: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes­ sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This

mg75n2ys40

Abstract: MG15N6ES42 2SK150A 2sk270a MG150n2ys40 MG8N6ES42 MG15G1AL2 mg75j2ys40 MG30G1BL2 S2530A
Contextual Info: 廃止品種一覧表 [ 10 ] [ 10 ] 廃止品種一覧表 次の品種が廃止品種となっております。新規採用は代替品種にてご検討くださいますようお願い申し上 げます。 廃止品種 1 形 名 02BZ2.2~4.7 代替品種

FD6666 diode

Abstract: diode BY100 1N4Q07 BA100 diode BY164 BB139 BAY38 diode aa119 1S184 diode 1N82
Contextual Info: mil UIIAGHRISnCS [M IN IS i SDISlimiS BY B J . B AB A N I la TANDY CORPORATION Although every c are is taken with the p rep aration of this book the p u b lish ers will not be resp on sib le for any e r r o r s that might occur. 1975 I. S. B. N. 0 900162 46 5

3182N

Abstract: 2sd4242 b1375 A1015 2482S 2sc 1091 1S1658 1S2452 2Sc2074 C1172B
Contextual Info: • TO BE DISCONTINUED T Y P E L IS T 1 T y p e N o. R ecom m end R e p la c e m e n t T y p e N o. T y p e N o. R ecom m end R e p la c e m e n t T y p e N o. T y p e N o. 0 4 A Z 2 .0 —3.6 0 2 C Z 2 .0 -3 .6 2SC 512 2SC 3421 2SC 2754 - 0 5 A Z 2 .2 - 3 .6

mg75n2ys40

Abstract: 2N3055 TOSHIBA mg150n2ys40 TLR103 TOSHIBA 2N3055 MG15N6ES42 2SK150A TOSHIBA MG150N2YS40 2sk270a S2530A
Contextual Info: 小信号ダイオード SMD ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製 品の誤作動や故障により､生命･身体･財産が侵害されることのないように､購入

BA100 diode

Abstract: BA102 AAY20 B2M1-5 1N2528 PH1021 OA210 diode DIODE AA116 BB105 GAZ17
Contextual Info: r im m i if Hill tWIBHHH ElBtlAlEHTS I SIISHIIffl IT 1 . 1. m n t IElHlllS{|iliitltrs|lfl The Grampians Shepherds Bush Road,. London W6 7NF ' ' Although every care is taken with the preparation o f this book the publishers will, not be responsible fo r any