74ABT
Abstract: 74ABT244-1N ODS7457
Contextual Info: PHILIPS INTERNATIONAL b SE T> • 711062b □□57455 Philips S em iconductors Advanced BiCMOS Products 74ABT244-1 DESCRIPTION FEATURES • 3-State buffers • Live insertion/extraction permitted . Outputs include series resistance of 30fi, making external termination resistors
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711062b74abt244-15ma/-32ma500ma+474abt500ns74abt244-1nods7457
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80C51
Abstract: 80C562 83C562 8XC562 S80C562-4A68 S83C562-4A68 ebft
Contextual Info: • 711062b ÜDbbSTG MfiS ■ P H I N Philips Semiconductors Microcontroller Products Product specification Single-chip 8-bit microcontroller 80C562/83C562 Single-chip 8-bit microcontroller with 8-bit A/D, capture/compare timer, high-speed outputs, PWM DESCRIPTION
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711065b80c562/83c5628xc56280c51+683c562/83c56283c56280c562s80c562-4a68s83c562-4a68ebft
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Semiconductor Laser International
Abstract: CURF5
Contextual Info: PH ILIP S INTERNATIONAL MI E D B 711062b 002417^ t. E P H I N 'h ilip s C o m p o n e n ts Data sheet status Preliminary specification code 9397 251 40142 date of Issue March 1990 CQL90/D Visible light emitting collimator pen FEATURES • • • • Low power
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711062bcql90/dsemiconductor laser internationalcurf5 |
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philips LTN111
Abstract: LTN111 LXL111-G Q0571
Contextual Info: PHILIPS INTERNATIONAL Philips Components Datasheet status Product specification date of issue July 1990 bOE D • 711062b □□571bE TÔT H P H I N LXL111-G t-Y /9 0 Electro-luminescent backlight panel QUICK REFERENCE DATA DEVICE DESCRIPTION 1 1 .5 x 6 2 mm
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711062bq0571belxl111-gltn111+2philips ltn111q0571
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COMPIM
Abstract: Companding compressor audio pin configuration of i3 processor Philips Capacitor K1 audio compressor compressor IC noise cancellation IC SIgnetics RF Communications Products NE5752
Contextual Info: PHILIPS INTERNATIONAL bDE ]> • 711062b OQSafi'iS 033 H P H I N Philips Semiconductor* RF Communication« Product* Objective specification Audio processor - companding, VOX and amplifier section NE/SA5752 T The NE/SA5752 is a high performance low power audio signal processing system
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ne/sa5752711ga2bcompimcompanding+8compressor audiopin configuration of i3 processorphilips capacitor k1audio compressorcompressor icnoise cancellation icsignetics rf communications productsne5752
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BUK444-600B
Abstract: 100-P T-30 TT120
Contextual Info: PHILIPS INTERNATIONAL b5E ]> B 711062b DDb3T7b TbD « P H I N Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in
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711062bbuk444-600bpinning-sot186100-p+2t-30tt120
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interruptor
Abstract: MBB relay MBB692 Philips MBB BSS88
Contextual Info: 711062b 00ti7ô73 T3T Philips Sem iconducto PHIN Product specification N-channel enhancement mode vertical D-MOS transistor FEATURES BSS88 Q UICK REFERENCE DATA • Direct interface to C-MOS, TTL, etc. SYMBOL PARAMETER MAX. UNIT 230 V mA V ds draln-source voltage
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711062b00ti7bss88interruptor+3mbb relaymbb692philips mbb
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BUK483-60A
Contextual Info: PHILIPS INTERNATIONAL bSE I> • 711062b Q D b m ? S 7bM « P H I N Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications.
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711002bqdb417sbuk483-60aot223+37110s2bs0t22335\im
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BUK456
Abstract: BUK456-60A BUK456-60B T0220AB BUK456-80A
Contextual Info: PHILIPS INTERNATIONAL bSE D B 711062b OObMlDb 2Ô7 • PHIN Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in
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711062bd0b41dbbuk456-60a/bt0220ab+7buk4567110fi2bddb411dbuk456-80a/bbuk456-60abuk456-60bbuk456-80a
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HEF4794BT
Abstract: LED Sign Board Diagram D737S HEF4794B HEF4794BP JMT 92
Contextual Info: IN TEG R A TED C IR C U ITS Philips Semiconductors PHILIPS PHILIPS 711062b 007374^ 071 This Material Copyrighted By Its Respective Manufacturer Product specification Philips Sem iconductors 8-stage shift-and-store register LED driver HEF4794B transferred to the storage register when the strobe STR
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hef4794b711062bd0737b0hef4794bt+4led sign board diagramd737shef4794bpjmt 92
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RJH 60 f7
Abstract: PLS105A PLS105 PLS Philips 105 PLUS105-70A PLUS105-70N PLUS105-70N3 ck105
Contextual Info: P R O G R A M M A B LE LO G IC DEVIC E S PLUS105-70 Programmable logic sequencer 16x48x8 Product specification June 1 5 ,1 9 9 4 IC13 hilips Semiconductors I PHILIPS PHILIPS V\ • -M I 711062b 007^702 Ô44 Product specification Philips Semiconductors Programmable Logic Devices
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plus105-7016x48x8711062b853-0401f+97110fl2brjh 60 f7pls105apls105pls philips 105plus105-70aplus105-70nplus105-70n3ck105
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m1511
Abstract: D041S BYW93 BYW93-50 BYW93-50U D8755
Contextual Info: BYW93 SERIES M A INTENANCE TYPE PHILIPS INTERNATIONAL SbE ]> 711062b D041SÖÖ 47fl • P H I N r - 0 3 - 2 I ULTRA FAST RECOVERY RECTIFIER DIODES Glass-passivated, high-efficiency epitaxial rectifier diodes in DO-5 metal envelopes, featuring low forward voltage drop, ultra fast reverse recovery times, very low stored charge and soft recovery
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byw93711062bd041st-03-2+5711002bm1511byw93-50byw93-50ud8755
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BUK444-500B
Abstract: transistor BUK444-500B
Contextual Info: hSE T> PHILIPS INTERNATIONAL m 711062b □0b3t171 MAT W P H I N Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in
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711062bbuk444-500b-sot186transistor buk444-500b |
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bsh 13 - n1
Abstract: BUK436-800A BUK436-800B
Contextual Info: PHILIPS INT ERNATIONAL bSE D B 711062b 0Db3T0b b47 « P H I N Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in
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711062bbuk436-800a/bbuk436-800a+4-800bbsh 13 - n1buk436-800abuk436-800b
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2N3819
Abstract: transistor 2N3819 philips jfet 2N3819 data 2n3819 transistor "N-Channel JFET" JFET 2N3819 Philips International 00Sb3
Contextual Info: 41E D PHILIPS INTERNATIONAL 711062b 00Sb333 □ M P H I N T-3 ^ 2 5 - S h itin e fîn m n n n A n t« ! D ata sheet status Preliminary specification d ate of issue October 1990 FEATURES • Low cost • Specified at 100 MHz • Automatic insertion package.
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2n38197110s2b00sb333t-3s-25+13mbb081711dfl2b002b334711002b002b33btransistor 2n3819philips jfet2n3819 data2n3819 transistorn-channel jfetjfet 2n3819philips international00sb3
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triac bt 12
Abstract: bt136 TAG 69 triac BT136 AN triac bt 135 BT13 ON triac BT 06 700 TRIAC TAG 64 BT13 s41h
Contextual Info: PHILIPS INTERNATIONAL bSE 711062b QGbE236 W D «PHIN BT136 SERIES J V. TRIACS Glass-passivated 4 ampere triacs intended fo r use in applications requiring high bidirectional transient and blocking voltage capability and high thermal cycling performance w ith very low thermal
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711062bqgbe236bt136524fl+11bt136fd8573triac bt 12tag 69 triacbt136 antriac bt 135bt13 ontriac bt 06 700triac tag 64bt13s41h
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transistor bl 187
Abstract: yl1 TRANSISTOR f748 transistor ac 132 BF748
Contextual Info: Produc^jæcification Philips Semiconductors BF748 NPN 1 GHz wideband transistor PHILIPS INTERNATIONAL IPHIN 711062b 0044^71 S7T SbE PINNING FEATURES • Stable oscillator operation DESCRIPTION PIN Code: F748 • High current gain • Low feedback capacitance
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bf748711062btransistor bl 187yl1 transistor+2f748transistor ac 132
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BUK436-800A
Abstract: BUK436-800B
Contextual Info: PHILIPS INT ERNATIONAL bSE D B 711062b 0Db3T0b b47 « P H I N Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in
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711062bbuk436-800a/bbuk436-800a+3-800bbuk436-800abuk436-800b
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BFQ32M
Abstract: transistor D 587 BFQ63 GHz PNP transistor
Contextual Info: Product specification Philips Sem iconductors PNP 4 GHz wideband transistor PHILIPS INTERNATIONAL ' / 5 bE D • 711062b BFQ32M □□•4 S 4 3 Q 3 3 T ■ P H IN PINNING DESCRIPTION PNP transistor In a TO-72 metal envelope with insulated electrodes and a shield lead connected to the
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bfq32m711062b0dhs43qbfq63+6is22i7110fleb00m5m35mbb347transistor d 587ghz pnp transistor
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BUK455-400B
Contextual Info: bSE D PHILIPS INTERNATIONAL m 711062b D 0 b 4 C m Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use In Switched Mode Power Supplies
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711062bbuk455-400b-t0220ab |
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BUK436-1000B
Contextual Info: PHILIPS INTERNATIONAL bSE ]> m 711062b ODba'Ill TD4 • PHIN Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in
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TRANSISTOR S 813
Abstract: BFQ265 BFQ265A NPN high frequency
Contextual Info: ^^»r«Juc^pM jficatjon Philips Semiconductors NPN high frequency high voltage transistor PHILIPS 5bE T> INTERNATIONAL FEATURES m 711062b BFQ265; BFQ265A □□4ShS3 7TT • P H I N PINNING • High breakdown voltages • Low output capacitance 1 emitter PIN
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ot128bbfq265bfq265a711062b+4t-33-05711062ltransistor s 813npn high frequency
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BFQ43S
Abstract: BFQ43 BLW31 plw7
Contextual Info: PHILIPS INTERNATIONAL b SE D • 711062b DDb2t.ll 3 74 « P H I N BFQ43 BFQ43S V.H.F. POWER TRANSISTORS N-P-N silicon planar epitaxial transistors intended fo r use in class-A, B o r C operated mobile transmitters w ith a nominal supply voltage o f 13,5 V. The transistors are resistance stabilized and guaranteed to w ith
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711062bbfq43bfq43sblw31+1plw7
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HKA802
Abstract: jumo pressure QQT117G SSOP16 UAA2072M UMA1017M UAA2072 MKA8 UMA1017
Contextual Info: INTEGRATED CIRCUITS » m s h e e t UMA1017M Low-voltage frequency synthesizer for radio telephones Product specification Supersedes data of N ovem ber 1994 1995 Jul 10 File under Integrated Circuits, IC 03 Philips Semiconductors 711062b 00^115^ 5 4 4 PHILIPS
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uma1017m711062b7110fl2b00t117e+8hka802jumo pressureqqt117gssop16uaa2072muaa2072mka8uma1017
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