TDA8709
Abstract: IEC134 S028 TDA8709T fdk id
Contextual Info: Philips Semiconductors Product specification T -1 7 -0 7 -1 3 Video analog input interface TDA8709 PHILIPS INTERNATIONAL SbE D 7110fi2b 0 0 3 7 C H 3 FEATURES APPLICATIONS • 8-bit resolution • Video signal processing • Sampling rate up to 30 MHz • Digital picture processing
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t-77-07-iztda87097110fl2b0037dt3+6711qfl5bd03710biec134s028tda8709tfdk id
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BDV67DF
Abstract: BDV67CF BDV67B BDV67BF MC3774 BDV67AF NPN pnp MATCHED PAIRS BDV67C
Contextual Info: Philips Components BDV67AF/67BF/67CF/67DF Data sheet status Product specification date of issue December 1990 NPN Darlington power transistors PHILIPS INTERNATIONAL I_ _ I 5bE m I 7110fi2b 00433=16 33T B P H I N 1 ^ 3 3 -2 ^ P IN N IN G - S O T 1 9 9
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bdv67af/67bf/67cf/67dfbdv66af/66bf/66cf/66df7110fl2bt-33-2+8bdv67afbdv67bfbdv67cfbdv67dfbdv67bmc3774npn pnp matched pairsbdv67c
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BUK436-60A
Abstract: BUK436-60B buk436 7N11 V6-S
Contextual Info: PHILIPS INTERNATIONAL b5E » • 7110fi2b 00b3fl^l 3>^b ■ P H I N Philips Semiconductors Product Specification PowerMOS transistor N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies
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7110fi2bbuk436-60a/bbuk436711dfi2b+4buk436-60abuk436-60b7n11v6-s
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74ABT652A
Abstract: 74ABT652AD 74ABT652ADB 74ABT652AN 74ABT652APW
Contextual Info: INTEGRATED CIRCUITS 74ABT652A Octal transceiver/register, non-inverting 3-State Product specification 1995 Feb 06 IC23 Data Handbook Philips Semiconductors PHILIPS PHILIPS 7110fi2b 00û7fln ÛÛT • ^ This Material Copyrighted By Its Respective Manufacturer
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74abt652a7110fi2b64ma/-32ma500ma+8d0fl7fl30tssop24ot355-1msa40174abt652ad74abt652adb74abt652an74abt652apw
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transistor BD6
Abstract: bd645 transistor BD643 H 649 A transistor
Contextual Info: J PHILIPS INTERNATIONAL SbE D m BD643; BD645; BD647; BD649; BD651 _ 7110fi2b 0042'i5b 741 I IPHIN -r-j 7 SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial-base transistors in a m onolithic Darlington circu it and housed in a T 0-22 0 envelope. They are intended fo r o u tp u t stages in audio equipment, general amplifiers, and analogue switching
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bd643bd645bd647bd649+9bd6517110fi2bbd644bd646bd648bd650transistor bd6bd645 transistorh 649 a transistor
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LTN221R-10
Abstract: lcd ltn LTN221F-10 lcd ltn221 philips ltn221r LTN221
Contextual Info: PHILIPS INTERNATIONAL bOE » • 7110fi2b 0057132 1MB « P H I N Philips Components Data sheet Product specification status LTN221 Liquid crystal display 7^ / 3 ? date of issue July 1990 QUICK REFERENCE DATA MODULE DESCRIPTION The LTN221 is a 5 x 7 dot, 20-character, 2-line dot matrix
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7110fi2bltn22120-character7110flab+7q5714d7110fl2bltn221r-10lcd ltnltn221f-10lcd ltn221philips ltn221r
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BDT96
Abstract: BDT94 BDT92 BDT95 BDT91 BDT93 NPN MATCHED PAIRS BDT92-BDT94
Contextual Info: BDT92 BDT94 BDT96 A . PHILIPS INT ERN AT IO NAL SbE D • 7110fi2b 0043332 447 ■IPHI N T-33-2/ SILICON EPITAXIAL BASE POWER TRANSISTORS P-N-P transistors in a plastic envelope intended fo r use in audio outpu t stages and general am plifier and switching applications.
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bdt92bdt94bdt967110fl2b+5bdt91bdt93bdt95npn matched pairsbdt92-bdt94
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M3055
Abstract: BYT230PIV600 m3054 BYT230PI-600 BYT230PIV D8403 IEC134 sot-227a byt230piv 600 BYT230PIV-600
Contextual Info: BYT230PIV600 to 800 PHILIPS INTERNATIONAL Sb E ]> • 7110fi2b O O M l B O b S70 « P H I N ULTRA FAST-RECOVERY DOUBLÉ RECTIFIER DIODES T'03~n Glass-passivated, high-efficiency epitaxial rectifier diodes in ISOTOP envelopes, featuring low forward voltage drop, ultra fast reverse recovery times, very low stored charge and soft-recovery characterisitc.
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byt230piv-7110fi2bt-oj-19m3055+9byt230piv600m3054byt230pi-600byt230pivd8403iec134sot-227abyt230piv 600byt230piv-600
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BUK445
Abstract: BUK445-60A BUK445-60B T-40
Contextual Info: PHILIPS INTERNATIONAL bSE D B 7110fi2b OOba^ûb ^QT • R H I N Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use In
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7110fl2b0db31fibbuk445-60a/bot186+5buk445id/100buk445-60abuk445-60bt-40
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BDT96
Contextual Info: BDT92 BDT94 BDT96 PHILIPS INTERNATIONAL SbE D • 7110fi2b 0043332 447 ■ P H I N T-3J-Z1 SILICON EPITAXIAL BASE POWER TRANSISTORS P-N-P transistors in a plastic envelope intended for use in audio output stages and general amplifier and switching applications.
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bdt92bdt94bdt967110fi2b+4bdt91bdt93bdt95o-220
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A83A marking
Abstract: 113A db 435A 95A 640 marking 113a LTE21009R LTE21009RA transistor 81 110 w 85 MARKING 41B marking code 41b
Contextual Info: -7^33-0^ LTE21009R LT E 21009R A ,{ PHILIPS INTERNATIONAL StE D • 7110fi2b 0041,218 Rbfl ■ PHIN MICROWAVE LINEAR POWER TRANSISTOR NPN silicon transistor fo r use in common-emitter class-A linear power amplifiers up to 4.2 GHz. Diffused em itter ballasting resistors, self-aligned process entirely ion implanted and gold sandwich
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lte21009rlte21009ra711002bfo-41b+8a83a marking113a db435a95a 640marking 113atransistor 81 110 w 85marking 41bmarking code 41b
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RFM R02112
Abstract: r02112 RF REMOTE CONTROL SIGNAL GENERATOR UAA3201T 14 pin proportional rc toy receiver proportional Remote Control Toy Car "data comparator" IEC 320 C13 P12 DBM RC TOY CAR CIRCUIT DIAGRAM
Contextual Info: INTEGRATED CIRCUITS UAA3201T UHF/VHF remote control receiver Preliminary specification Supersedes data of September 1993 File under Integrated Circuits, IC18 Philips Semiconductors 1995 May 18 PHILIPS 7110fi2b DDf l Tb bl D37 PHILIPS Philips Semiconductors
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uaa3201t711002bftz17tr21007110a2b+9rfm r02112r02112rf remote control signal generator14 pin proportional rc toy receiverproportional remote control toy cardata comparatoriec 320 c13p12 dbmrc toy car circuit diagram
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47AB
Abstract: CD4516BCN dely pulse sample STR-M ABT22V10A5 ABT22V10A7
Contextual Info: INTEGRATED CIRCUITS a m s ik h e ABT22V10A5, A7 5V high-speed universal PLD device with live insertion capability Product specification 1995 Apr 19 IC13 Data Handbook Philips Semiconductor PHILIPS PHILIPS 7110fi2b OOflTbOl hhE Philips Semiconductors Product specification
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SFE10.52MJA10
Abstract: 8745H
Contextual Info: Philips Semiconductors Preliminary specification Satellite sound receiver with l2C-bus control TDA8745 FEATURES • On-chip frequency synthesizer and mixer: - tuning range 4 to 9.77 M Hz - reference oscillator 4 M H z using a crystal or 4 MHz frequency source
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35Z diode
Abstract: CX530 RADOS transistor cs522 74ABT4764BB CS511 CS522 CA-512 74abt4764 T72 diode
Contextual Info: BICMOS LOGIC PRODUCTS 7 4 A B T 4 7 6 4 Programmable DRAM Controller Product Specification March 2 2 ,1 9 9 4 IC23 Philips Semiconductors PHILIPS PHILIPS This Mate] m tei 1 1 0 Ö 2 L D G Ô3 2 Philips Semiconductors BiCMOS Logic Products Product specification
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74abt476480mhz53-1420a7110fieb+935z diodecx530radostransistor cs52274abt4764bbcs511cs522ca-512t72 diode
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TCA280A
Abstract: TCA280B IC BIPOLAR TCA280B TCA280 220v ac voltage stabilizer circuit thryristor 5 pin IC 7z 80 ac to 220v ac stabilizer Triac stabilizer application note triac burst control ic
Contextual Info: Product specification Philips Semiconductors Integrated Circuits General-purpose triggering circuit TCA280B GENERAL DESCRIPTION QUICK REFEREN CE DATA The TCA280B is a bipolar integrated circuit delivering positive pulses for triggering a triac or a thyristor. The
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tca280b7110fl2liq07cm4e7110fl2h+9tca280aic bipolar tca280btca280220v ac voltage stabilizer circuitthryristor5 pin ic 7z80 ac to 220v ac stabilizertriac stabilizer application notetriac burst control ic
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ht 25 transistor
Abstract: BUK638-500B
Contextual Info: PHILIPS INTERNATIONAL bSE T> m 711D62L. DDfc,4311 Philips Semiconductors PowerMOS transistor Fast recovery diode FET_ GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. FREDFET with fast recovery
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5534D
Abstract: 5533N ne5533n ZT04 TL083 NE5533AN NE5534AD 5534 amp 5534A NE5533D
Contextual Info: PHILIPS INTERNATIONAL SßE D • 711Gfl2b DDSDÖD1 SG4 H P H I N Philips Semiconductors-Signetics Linear Products Hroauci specmcaiion M c c c q q /c c q q A / Dual and single low noise op amp NE/SA/SE5534/5534A i o DESCRIPTION FEATURES The 5533/5534 are dual and single
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tam s8
Abstract: C101 LTA343F-11 LTA343R-11
Contextual Info: PHILIPS INTERNATIONAL Data sheet status Pro du ct specification date of issue J u ly 1990 bOE D I 7110flSb 0 0 5 7 G 1 3 30T LTA343 Liquid Crystal Display QUICK REFERENCE DATA DEVICE DESCRIPTION The LTA343 is a 40-character, 2-line dot matrix display. Typical applications include hand held equipment and
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tda1518bq
Abstract: tda1518 TDA1516BQ car power amp circuit diagrams TDA1S18BQ
Contextual Info: TDA1518BQ Æ _ 24 W BTL OR 2 X 12 WATT STEREO CAR RADIO POWER AMPLIFIER G E N E R A L D ESC R IPTIO N .an inte9rf e d class-B o u tp u t a m p lifie r in a 13-lead single-in-line SI L plastic pow er Package. The device is primarily developed for car radio applications.
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D441
Abstract: BD436 437 bd 8043 BD439 MHC11 BD433 BD434 BD435 BD437
Contextual Info: Philips Semiconductors Preliminary specification Silicon epitaxial-base transistors PHILIPS INTERNATIONAL DESCRIPTION SbE D • 711DfiSb □D4SclDti *153 ■ P H I N QUICK REFERENCE DATA SYMBOL ^CES PINNING - TO-126 SOT32 DESCRIPTION 1 emitter 2 collector
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2322-712
Abstract: BFG134 LC 3524 philips resistor 2322 763 2222 372 TAG 453 665 800 2222 379 2322 712 fr 253/30 r h a 431 transistor
Contextual Info: Product specification Philips Semiconductors T ^ 3 3 -a s NPN 7 GHz wideband transistor PHILIPS INTERNATIONAL DESCRIPTION BFG134 VllOBSb □04S20l4 4ôb M P H I N 5bE D PINNING NPN planar epitaxial transistor in a 4-lead double-emitter plastic SOT103 envelope, intended for
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ot10333-osbfg134q04s2014+92322-712lc 3524philips resistor 2322 7632222 372tag 453 665 8002222 3792322 712fr 253/30 rh a 431 transistor
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SAB 8048 P 220 SM 590
Abstract: MAA 723 MADE S18B micro controller based cfl Inverter soc 512a d74c 4X16 lcd 1514c 8 lcd digit counter s1bc
Contextual Info: PCF84C633A J V_ SINGLE-CHIP 8-BIT MICROCONTROLLER WITH LCD DRIVERS, DERIVATIVE PORT, TIMER/CAPTURE AND TIMER/COUNTER DESCRIPTION IMPORTANT The PCF84C633A is a microcontroller with 20 on-chip liquid crystal display LCD outputs. These can be configured for
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pcf84c633apcf84cxx16-bit7z24606+12711002b007412bsab 8048 p 220 sm 590maa 723made s18bmicro controller based cfl invertersoc 512ad74c4x16 lcd1514c8 lcd digit counters1bc
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M1434
Abstract: Gate Turn-Off Thyristors LS025 BTV58 BTV58-600R 600R CG10A 1000R
Contextual Info: PHILIPS 5ÔE D INTERNATIONAL • 7110ÖEb 0053003 OtM Bi PHIN BTV58 SERIES J \ _ FAST GATE TURN-OFF THYRISTORS T h y risto rs in T 0 - 2 2 0 A B envelopes capable o f being turned both on and o f f via the gate. T h e y are suitable fo r use in high-frequency inverters, pow er supplies, m otor c o n tro l etc. T h e devices have no
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