AD-BZT52C3V6S
|
|
JCET Group
|
AD-BZT52C*S series Zener diode in SOD-323 package, featuring 200mW power dissipation, planar die construction, AEC-Q101 qualification, and zener voltage range from 2.4V to 43V with low temperature coefficient.AD-BZT52C*S series is a plastic-encapsulated Zener diode featuring 200mW power dissipation on ceramic PCB, planar die construction, AEC-Q101 qualification, and 0.9V forward voltage at 10mA, suitable for general purpose medium current applications.AD-BZT52C*S series is a plastic-encapsulated Zener diode featuring planar die construction, 200mW power dissipation on ceramic PCB, AEC-Q101 qualification, and operating junction temperature from -55 to 150°C. |
Original |
PDF
|
|
|
|
BZT52C5V6S
|
|
Microdiode Semiconductor (MDD)
|
Zener Diode |
Original |
PDF
|
|
|
|
BZT52B5V6S
|
|
JCET Group
|
SOD-323 plastic-encapsulated Zener diode, BZT52B2V4S-BZT52B39S series, with planar die construction, 200 mW power dissipation, and zener voltage range from 2.4 V to 39 V, suited for automated assembly and general purpose medium current applications. |
Original |
PDF
|
|
|
|
BZT52C5V6S
|
|
Shenzhen Heketai Electronics Co Ltd
|
Surface mount Zener diode with 200 mW power dissipation, available in SOD-323 package, featuring zener voltages from 2.0 V to 51 V, suitable for general purpose voltage regulation applications.Surface mount Zener diode with 200 mW power dissipation, available in SOD-323 package, featuring medium current capability and general purpose voltage regulation from 2.0 V to 51 V.Surface mount Zener diode with 200 mW power dissipation, available in SOD-323 package, featuring medium current capability and general purpose voltage regulation from 2.0 V to 51 V. |
Original |
PDF
|
|
|
|
BZT52C5V6S
|
|
Jiangsu JieJie Microelectronics Co Ltd
|
Silicon planar Zener diode in SOD-323 surface mount package with 200 mW power dissipation, available in various breakdown voltages from 2.4 V to 43 V, featuring low reverse leakage and high reliability for precision voltage regulation. |
Original |
PDF
|
|
|
|
BZT52C3V6S
|
|
Jiangsu JieJie Microelectronics Co Ltd
|
Silicon planar Zener diode in SOD-323 surface mount package with 200 mW power dissipation, available in various breakdown voltages from 2.4 V to 43 V, featuring low reverse leakage and high reliability for precision voltage regulation.Silicon planar Zener diode in SOD-323 surface mount package with 200mW power dissipation, available in various zener voltages from 2.4V to 43V, featuring high reliability and low forward voltage of 0.9V at 10mA. |
Original |
PDF
|
|
|
|
BZT52C5V6S
|
|
JCET Group
|
SOD-323 plastic-encapsulated Zener diode with 200 mW power dissipation, featuring planar die construction, available in zener voltages from 2.4 V to 39 V, suitable for automated assembly and general purpose medium current applications. |
Original |
PDF
|
|
|
|
BZT52C3V6S
|
|
Shandong Jingdao Microelectronics Co Ltd
|
Silicon Planar Zener Diode in SOD-323 package with 200mW power dissipation, reverse voltage range 2.4V to 43V, and typical thermal resistance of 625°C/W, suitable for automated assembly.Silicon Planar Zener Diode in SOD-323 package with 200mW power dissipation, reverse voltage range 2.4V to 43V, low forward voltage, and suited for automated assembly.Silicon Planar Zener Diode in SOD-323 package with 200mW power dissipation, reverse voltage range 2.4V to 43V, low forward voltage of 0.9V at 10mA, and operating temperature from -55°C to +150°C. |
Original |
PDF
|
|
|
|
BZT52C3V6S
|
|
Microdiode Semiconductor (MDD)
|
Zener Diode |
Original |
PDF
|
|
|
|
AD-BZT52C5V6S
|
|
JCET Group
|
AD-BZT52C*S series Zener diode in SOD-323 package, featuring 200mW power dissipation, planar die construction, AEC-Q101 qualification, and zener voltage range from 2.4V to 43V with low temperature coefficient.AD-BZT52C*S series is a plastic-encapsulated Zener diode featuring 200mW power dissipation on ceramic PCB, planar die construction, AEC-Q101 qualification, and 0.9V forward voltage at 10mA, suitable for general purpose medium current applications.AD-BZT52C*S series is a plastic-encapsulated Zener diode featuring planar die construction, 200mW power dissipation on ceramic PCB, AEC-Q101 qualification, and operating junction temperature from -55 to 150°C. |
Original |
PDF
|
|
|
|
BZT52C3V6S
|
|
Shenzhen Heketai Electronics Co Ltd
|
Surface mount Zener diode with 200 mW power dissipation, available in SOD-323 package, featuring zener voltages from 2.0 V to 51 V, suitable for general purpose voltage regulation applications. |
Original |
PDF
|
|
|
|
BZT52B5V6S
|
|
Jiangsu JieJie Microelectronics Co Ltd
|
Silicon planar Zener diodes in SOD-323 surface mount package with 200mW power dissipation, available in various breakdown voltages from 5.1V to 43V with tight tolerance and low zener impedance. |
Original |
PDF
|
|
|
|
BZT52C5V6S
|
|
SLKOR
|
|
Original |
PDF
|
|
|
|
BZT52C3V6S
|
|
JCET Group
|
SOD-323 plastic-encapsulated Zener diode with 200 mW power dissipation, featuring planar die construction, suitable for automated assembly, and available in lead-free version. |
Original |
PDF
|
|
|
|
|
|
BZT52C3V6S
|
|
SLKOR
|
|
Original |
PDF
|
|
|
|
BZT52C5V6S
|
|
Shandong Jingdao Microelectronics Co Ltd
|
Silicon Planar Zener Diode in SOD-323 package with 200mW power dissipation, reverse voltage range 2.4V to 43V, and typical thermal resistance of 625°C/W, suitable for automated assembly.Silicon Planar Zener Diode in SOD-323 package with 200mW power dissipation, reverse voltage range 2.4V to 43V, low forward voltage, and suited for automated assembly.Silicon Planar Zener Diode in SOD-323 package with 200mW power dissipation, reverse voltage range 2.4V to 43V, low forward voltage of 0.9V at 10mA, and operating temperature from -55°C to +150°C. |
Original |
PDF
|
|
|
|
BZT52B3V6S
|
|
JCET Group
|
SOD-323 surface-mount Zener diode with planar die construction, available in lead-free version, 200 mW power dissipation, and zener voltage range from 2.4V to 39V, suited for automated assembly processes. |
Original |
PDF
|
|
|
|
AD-BZT52B5V6S
|
|
JCET Group
|
AD-BZT52B*S series is a plastic-encapsulated Zener diode featuring planar die construction, 200 mW power dissipation, AEC-Q101 qualification, and operating junction temperature from -55 to 150 °C. |
Original |
PDF
|
|
|
AD-BZT52C3V6S
