00B3FL Search Results

74LS139PC

Abstract: 74LS139P 74LS139DC
Contextual Info: ;'1 NATIONAL SEMICOND -CLO.GIO OSE D | bSDllPS 00b3fll? D | 139 139 T-66-21-55 CONNECTION DIAGRAM P IN O U T 54S/74S139 54LS/74LS139 A o a [I i s ] Eb A la [ 7 Î 7 ] Aob Öoa [ T 75] 1 2 ]Ö 0 b Ö 2a [ ? T ijö ib Ô 3 a [T 10] 5 2 b [? ~9~1 0 3 b DESCRIPTION — The *139 is a high speed dual t-of-4 decoder/demulti­

BUK436-60A

Abstract: BUK436-60B buk436 7N11 V6-S
Contextual Info: PHILIPS INTERNATIONAL b5E » • 7110fi2b 00b3fl^l 3>^b ■ P H I N Philips Semiconductors Product Specification PowerMOS transistor N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

K4175

Abstract: BC 148 TRANSISTOR PIN CONFIGURATION buk417-500ae transistor BC 147 sf 128 transistor BUK417-500B BUK417-500BE transistor bc 148 BC 148 transistor bc 147 B transistor
Contextual Info: PH ILIP S I NTE RN ATI ON AL bSE D H 7 1 1 0 6 2 b 00b3flfib T5^ « P H I N Philips Semiconductors Product Specification PowerMOS transistor GEN ERAL DESCRIPTION N-channei enhancement mode field-effect power transistor in IS O T O P envelope. The device is intended for use in

BUK416-100AE

Abstract: BUK416-100BE BUK416-100AE,BE buk418 BUK416-1OOAE transistor 2TH
Contextual Info: PHILIPS INTERNATIONAL bSE D H 7110SBb 00b3fl7b DAT • PHIN Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channei enhancement mode field-effect power transistor in ISOTOP envelope. The device is intended for use in

BUK104-50L

Abstract: BUK104-50S BUK104-50US
Contextual Info: PHILIPS bSE INTERNATIONAL D • 711002b D 0 b 3 f l43 Monolithic temperature and overloadprotected logic level power MOSFET in a 5 pin plastic envelope, intended as a general purpose switch for automotive systems and other applications. APPLICATIONS General controller for driving

transil 428

Contextual Info: SGS-THOMSON M ^©iy! gïïM KiO(gi sm4T6V8, A/220, a SM4T6V8C,CA/220C,CA TRANSIL FEATURES . PEAK PULSE POWER= 400 W @ 1ms. • BREAKDOWN VOLTAGE RANGE : From 6V8 to 220 V. ■ UNI AND BIDIRECTIONAL TYPES. . LOW CLAMPING FACTOR. ■ FAST RESPONSE TIME: Tclamping : 1ps (0 V to VBR).

BUK436-60A

Abstract: 134 T31 100-P BUK436-60B
Contextual Info: PHILIPS INTERNATIONAL bSE D • 711D6Sb 00t.3flTl 3^b ■ P H I N Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode iield-effect power transistor in a plastic envelope. The device is intended for use in

lem HA

Abstract: BUK102-50GL IEC134 T0220AB
Contextual Info: PHILIPS INTERNATIONAL bSE D • 7110fl2ti DDbBflPS PowerMOS transistor Logic level TOPFET DESCRIPTION Monolithic temperature and overload protected logic level power MOSFET in a 3 pin plastic envelope, intended as a general purpose switch for automotive systems and other applications.

D482445LGW-A70

Abstract: cwi 1011
Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT /¿PD482444, 482445 4M-Bit Dual Port Graphics Buffer 256K-WORD BY 16-BIT D escrip tio n The /iPD482444 and ^PD482445 have a random access port and a serial access port. The random access port has a 4M-bit 262, 144 words x 16 bits memory cell array structure. The serial access port can perform clock

100PD

Abstract: BUK102-50GS T0220AB
Contextual Info: PHILIPS INTERNATIONAL bSE D • 7 1 1 0 0 2 b 0DL.3Ö3M bSO « P H I N Philips Semiconductors Product Specification PowerMOS transistor TOPFET DESCRIPTION BUK102-50GS QUICK REFERENCE DATA Monolithic temperature and overload protected power MOSFET in a 3 pin plastic envelope, intended

PD481850GF

Abstract: D481850
Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT /¿PD 481850 8M-bit Synchronous GRAM Description The iiPD481850 is a synchronous graphics memory SGRAM organized as 131,072 words x 32 bits x 2 banks random access port. This device can operate up to 100 MHz by using synchronous interface. Also, it has 8-column Block Write function

Contextual Info: u ~ CDP68HC05C4, CDP68HC05C8, CDP68HCL05C4, CDP68HCL05C8, CDP68HSC05C4, CDP68HSC05C8 8-Bit Microcontroller Series October 1995 The following are some of the hardware and software highlights of the CDP68HC05C4 family of HCMOS Micro­ computers. Hardware Features All Types

GLS-1

Abstract: BUK105-50L BUK105-50S BUK105-50US transistor 3BU
Contextual Info: PHILIPS INTERNATIONAL b5E D B 711DSSb 0ab3flSH Philips Sem iconductors PowerMOS transistor Logic level TOPFET DESCRIPTION Monolithic temperature and overload protected logic level power MOSFET in a 5 pin plastic envelope, intended as a general purpose switch for automotive

BUK105-50L

Abstract: BUK105-50S BUK105-50US
Contextual Info: PH I L I P S I N T E R N A T I O N A L bSE D B 711GÖSb DGL3ÖSH Philips Semiconductors 41=1 « P H I N Product Spécification PowerMOS transistor BUK105-50L/S Logic level DESCRIPTION Monolithic temperature and

BUK102-50DL

Abstract: T0220AB
Contextual Info: PHILIPS INTERNATIONAL t.SE T> WM 711062b D0b3fll7 SHI • PHIN Philips Semiconductors Product Specification PowerMOS transistor BUK102-50DL Logic level DESCRIPTION Monolithic temperature and overloadprotected logic level power

FLG22

Abstract: BUK101-50GL T0220AB 100R01
Contextual Info: PHILIPS INT ERNATIONAL b5E D • 7110A2b D0t.37cn Philips Semiconductors 7Tb ■ PHIN Product Specification PowerMOS transistor BUK101-50GL Logic level DESCRIPTION Monolithic temperature and overload protected logic level power

D482234

Contextual Info: DATA SHEET NEC / / MOS INTEGRATED CIRCUIT //PD482234, 482235 2M-Bit Dual Port Graphics Buffer 256K-WORD BY 8-BIT D escription The jiPD482234 and /iPD482235 have a random access port and a serial access port. The random access port has a 2M-bit 262,144 words x 8 bits memory cell array structure. The serial access port can perform clock operations

D482234

Abstract: D482234G5-70 d482235le D482235 icc20 sis 735 k7 TNC 24 mk 2 d482235g5-60 SES N 2402
Contextual Info: DATA SHEET NEC / / MOS INTEGRATED CIRCUIT //PD482234, 482235 2M-Bit Dual Port Graphics Buffer 256K-WORD BY 8-BIT D escription The jiPD482234 and /iPD482235 have a random access port and a serial access port. The random access port has a 2M-bit 262,144 words x 8 bits memory cell array structure. The serial access port can perform clock operations

Contextual Info: CMM-4 2.0 to 20.0 GHz GaAsMMIC Amplifier □ Flat Gain □ +16 dBm P .j dB □ Small Size: 39 x 74 mils □ Directly Cascadable □ Self-Biased □ Single Power Supply □ Guaranteed Performance Celeritek CMM-4 GaAs MMIC Amplifier T h e C M M -4 is a 2 to 20 G H z G aA s M M IC am p lifier.

74LS153PC

Abstract: pin DIAGRAM OF IC 74153 TEA 6621 ic 74153 Multiplexer pin diagram ic 74153 ic 74153 Multiplexer so 54 t ic 74153 pin configuration L5013 pin diagram of ic 74ls153
Contextual Info: NATIONAL SEfUCOND { L O G I C } 05E D | bSDUEa _ 00L.3Ö33 Ö T-66-21-S3 _ CO N N ECTIO N DIAGRAM PINOUT A 54/74153 54S/74S153 54LS/74LS153 D U A L 4 -IN P U T M U L T IP L E X E R 1 la D ESCRIPTIO N — The '153 is a high speed dual 4-input multiplexer with com­