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    Bimba Manufacturing Company

    Bimba Manufacturing Company UGSM-27110-A2B1

    METRIC SLIDE, ULTRAN RODLESS, GOLD COUPLING STRENGTH ; 27MM BORE; STROKE: 110 M
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS UGSM-27110-A2B1 Bulk 5 Weeks 1
    • 1 $1615.16
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    • 100 $1615.16
    • 1000 $1615.16
    • 10000 $1615.16
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    7110A2B Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    BD201F

    Abstract: BDX77F BD203F BD202F BD204F BDX78F
    Contextual Info: J PHILIPS INTERNATIONAL SbE D • BD201F; BD203F; BDX77F 7110a2b 0Gl+2ÛDfi Ô4S ■ PHIN T - 3 3 ' O cf SILICON EPITAXIAL POWER TRANSISTORS NPN Silicon power transistors in a SO T186 envelope w ith an electrically insulated mounting base. PNP complements are B D 202F, BD204F and B D X 78F .


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    TG 56369

    Abstract: fast diod 5A Ultra Fast Recovery Double Rectifier Diodes BYV32 IEC134 RECTIFIER DIODES PHILIPS 20/TG 56369
    Contextual Info: BYV32 SERIES PHILIPS INTERNATIONAL SLE D • 7110a2b Q0413Sfl C 7T ■ P H I N T - ¿ > 3 - 1 ^ ULTRA FAST RECOVERY DOUBLE RECTIFIER DIODES Glass-passivated, high-efficiency double rectifier diodes in plastic envelopes, featuring low forward voltage drop, ultra fast reverse recovery times and soft-recovery characteristic. T hey are intended for


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    byv327110fl2bgd413sdq413b7+8m2488m1257tg 56369fast diod 5aultra fast recovery double rectifier diodesiec134rectifier diodes philips20/tg 56369 PDF

    LD18 SOT223

    Abstract: transistor wmv 5E SOT223 IJ63 BUK482-100A LD18A
    Contextual Info: PHILIPS INTERNATIONAL bSE D • 7110a2b 00b41bcl 4bD « P H I N Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channei enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications.


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    5143T

    Abstract: "Brushless DC Motor Drive Circuit" sensorless brushless motor TDA5143T
    Contextual Info: INTEGRATED CIRCUITS EMM SlnlElET TDA5143T Brushless DC motor drive circuit Product specification Supersedes data of March 1992 File under Integrated Circuits, IC11 June 1994 Philips Semiconductors PHILIPS PHILIPS 7110A2b ODVa?^ BOb Philips Semiconductors


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    BUK553-100A

    Abstract: BUK553-100B
    Contextual Info: PHILIPS INTERNATIONAL bSE D • 7110a2b 00^4531 313 ■ PHIN Philips Semiconductors Product Specification PowerMOS transistor BUK553-100A/B Logic level FET_ •_ GENERAL DESCRIPTION N-channel enhancement mode


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    7110fl2buk553-100a/bbuk553-100b+3-id/100buk553-100abuk553-100b PDF

    t11g

    Abstract: 74F189 74F189A 74F219A C3F189AD N74F189AD N74F189AN
    Contextual Info: P H I L IP S I N T E R N A T I O N A L SflE D • 7110A2b 0 0 5 1 ^ 2 Philip« Sem ieonductort-Signetlc* FAST Products 420 ■ P H I N Producl «pecfflcallon 64-Bit TTL bipolar RAM, inverting 3-State 74F189A FEATURES • 3-state outputs • High speed performance


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    2 Wavelength Laser Diode

    Abstract: 820 nm laser diode multimode COF25B laser diode 780 nm laser diode philips philips potentiometer invisible
    Contextual Info: 41E D B3 7110a2b 0D241S5 3 PHIN 1 4 1989 AP D E V E L O P M E N T DATA C Q F 2 5 A /D SERIES C Q F 2 5 B /D SERIES C Q F 2 5 C /D SERIES T h s d ata sheet co n tain s advance in fo rm a tio n and sp e cifica tio n s are su b je ct to change w ith o u t n o tice .


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    7110a2bd0241sscqf25a/dcqf25b/d+10cqf25c/d-w-07711002b2 wavelength laser diode820 nm laser diode multimodecof25blaser diode 780 nmlaser diode philipsphilips potentiometerinvisible PDF

    tda8466

    Abstract: TDA8451 TDA8391 TDA8451A TDA8452A pp td 40 SECAM Decoders TDA846 D2045 AF filter
    Contextual Info: D EV ELO PM EN T DATA TDA8452A T h is data sheet contains advance information and specifications are subject to change w ithout notice. SbE » ' PHILIPS INTERNATIONAL • 7110A2b ODab^? T74 ■ P H I N ' T-77-07-13 p 2c c d f il t e r c o m b i n a t i o n f o r


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    BYX46

    Abstract: 7Z10045 diode 10di T50 thyristor BYX46-600 BYX46-200 BYX46-200R BYX46-600R D696
    Contextual Info: BYX46 SERIES PHILIPS SbE D INTERNATIONAL • 7110a2b 0041b3D S32 ■ P H I N _ FAST SOFT-RECOVERY RECTIFIER DIODES - r t ^ * • With controlled avalanche Diffused silicon diodes in DO-4 metal envelopes, capable of absorbing transients. They are primarily


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    AM13

    Abstract: UMA1020M
    Contextual Info: INTEGRATED CIRCUITS m E E i UMA1020M Low-voltage dual frequency synthesizer for radio telephones Product specification Supersedes data of November 1994 File under Integrated Circuits, IC03 PHILIPS Philips Sem iconductors 7110A2b 00^0704 1995 Jun 15 T35 Philips Semiconductors


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    transistor 2N2646

    Abstract: 2n2646 2n2646 pin Unijunction transistor 2N2646 of 2N2646 PHILIPS 2N2646 pin configuration 2N2646 transistor datasheet 2n2646 package 2N2646 CIRCUIT
    Contextual Info: 596 Z8Z. SbE D philips international • 7110a2b 0042bl0 b31 ■ PHIN J - 2 Z-Crt Philips Semiconductors 2N2646 Data sheet status Preliminary specification date of Issue December 1990 Silicon unijunction transistor QUICK REFERENCE DATA PARAMETER SYMBOL CONDITIONS


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    711002b004eb2n2646-to-18+12vkbi-10v7110a2b004sbl3t-25-q9transistor 2n26462n2646 pinunijunction transistor 2n2646 of2n2646 philips2n2646 pin configuration2n2646 transistor datasheet2n2646 package2n2646 circuit PDF

    Contextual Info: PHILIPS INTERNATIONAL bDE ]> • 7110a2b 0057018 ■i'll B P H I N Philips Components LTD101 Data sheet status Product specification date of issue July 1990 -7^ 7- 3 s Liquid crystal display DEVICE DESCRIPTION QUICK REFERENCE DATA The LTD101 is a 3 1/2-digit 7 segment clock display with


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    SB 62A diode

    Abstract: BDT62 BDT63 bdt63a nas 560 BDT62B BDT63B BDT63C BDT63C PHILIPS
    Contextual Info: BDT62; 62A _ PHILIPS J DB T62B ShE D INTERNATIONAL • 00i+323fl T ä 4 « P H I N 7110a2b T - 3 ? - 3 t SILICON DARLINGTON PO W ER TRANSISTO RS P-N-P epitaxial base transistors In monolithic Darlington circuit for audio output stages and general


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    s2y3

    Abstract: 500C 74ABT16244A BT16244ADGG BT16244ADL
    Contextual Info: INTEGRATED CIRCUITS 74ABT16244A 16-bit buffer/line driver 3-State Product specification 1995 Apr 11 IC23 Data Handbook Philips Semiconductors t 7110A2b OOflTia? a 3 T • This Material Copyrighted By Its Respective Manufacturer PHILIPS Philips Semiconductors


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    daya tv

    Abstract: IEC134 TDA8712 TDA8712T TDF8712 TDF8712T
    Contextual Info: IN TE G R A TE D C IR C U ITS TD A8712; TDF8712 8-bit digital-to-analog converters Product specification Supersedes data of April 1993 File under Integrated Circuits, IC02 June 1994 Philips Semiconductors PHILIPS 7110a2b 0G73bb2 b£l This M aterial C o p yrighted By Its Respecti v e M a n u f a c t u r e r


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    BYX56-600

    Abstract: Byx56 1500 t0711 BYX56-600R BYX56 BYX56-1400 BYX56-1400R IEC134 BYX56/BYX56-600R
    Contextual Info: BYX56 SERIES M AIN TEN AN C E TYPE SbE D - PHILIPS INTERNATIONAL • 7110A2b 0041b4b STT ■ PHIN T -0 7 -1 CONTROLLED AVALANCHE RECTIFIER DIODES Silicon diodes in a DO— 5 metal envelope, capable of absorbing transients and intended for power rectifier applications.


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    byx56711002b0041b4bt-07-+10byx56-600byx56-1400byx56-600rbyx56-1400rbyx56--600irbyx56 1500t0711iec134byx56/byx56-600r PDF

    multi-emitter transistor

    Abstract: SOT-48 BLX96 IEC134 BLX-96 IEC-134
    Contextual Info: bSE D • 7110a2b Q0b35MÛ 472 ■ PHIN MAINTENANCE TYPE_ | BLX96 PHILIPS INTERNATIONAL U.H.F. LINEAR POWER TRANSISTOR N -P -N m u lti-e m itte r silicon planar ep itaxial transistor p rim a rily fo r use in linear u .h .f. am plifiers fo r television transposers and tran sm itters.


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    711d82bblx96multi-emitter transistorsot-48+3iec134blx-96iec-134 PDF

    buk418

    Abstract: BUK416-200AE lola BUK416-200BE 200AE
    Contextual Info: PHILIPS INTERNATIONAL LSE D • 7110A2b DDb3fifil 447 « P H I N Philips Semiconductors Product Specification PowerMOS transistor GEN ER AL DESCRIPTION N-channel enhancement mode field-effect power transistor in ISO TO P envelope. The device is intended for use in


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    AM deMODULATOR

    Abstract: am signal using multiplier ic diagram tv Philips 20 automatic Audio switch circuit diagram AM deMODULATOR circuit diagram tv Philips 14 IEC134 TDA9830 TDA9830T AAA16
    Contextual Info: INTEGRATED CIRCUITS tiHnmr TDA9830 TV sound AM-demodulator and audio source switch Product specification Supersedes data of March 1992 File under Integrated Circuits, IC02 June 1994 Philips Semiconductors PHILIPS PHILIPS 7110A2b 00?fl243 b TE Product specification


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    FLG22

    Abstract: BUK101-50GL T0220AB 100R01
    Contextual Info: PHILIPS INT ERNATIONAL b5E D • 7110A2b D0t.37cn Philips Semiconductors 7Tb ■ PHIN Product Specification PowerMOS transistor BUK101-50GL Logic level DESCRIPTION Monolithic temperature and overload protected logic level power


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    TIP32AF

    Abstract: TIP32DF TIP31AF TIP31BF TIP31CF TIP31F TIP32BF TIP32F 32-AF
    Contextual Info: TIP32F; 32 A F TIP32BF; 32CF TIP32DF PHILIPS INTERNATIONAL SbE D • 7110a2b 0 0 4 3 ^ 0 210 M P H I N T - 3 3 - 1 7 SILICON EPITAXIAL POWER TRANSISTORS PNP silicon power transistors, each in a SO T186 envelope w ith an electrically insulated mounting base.


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    til 815 display

    Abstract: SAA5248 TDa8362 SAA5246 teletext decoder character set rolling code philips Avance teletext sub-code TDA8362 B DIP48
    Contextual Info: IN TE G R A TE D C IR C U ITS 'A [HI SAA5281 Integrated Video input processor and Teletext decoder IVT1.8* Preliminary specification File under Integrated Circuits, IC02 June 1994 Philips Semiconductors PHILIPS 7110a2b GD735Sfl E1T This Material C o p yrighted By Its Respect i v e Ma nu f a c t u r e r


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    diagram remote control receiver and transmitter

    Abstract: block diagram of mri machine MAV1 remote control transmitter and receiver circuit mr1e SCC2698BC1A84 transistor 1am DDTD172 MP10 SCC2698B
    Contextual Info: INTEGRATED CIRCUITS SCC2698B Enhanced octal universal asynchronous receiver/transmitter Octal UART Product specification 1995 May 1 IC19 Philips Semiconductors PHILIPS PHILIPS 7110A2b 0CHD171 1S4 Philips Semiconductors Product specification Enhanced octal universal asynchronous


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    bd330

    Abstract: bd329
    Contextual Info: BD329 PHILIPS INTERNATIONAL SbE D 7110A2b 004E67D ^76 M P H I N • T " 3 3 ' 0 7 SILICON PLANAR EPITAXIAL POWER TRANSISTOR N -P-N tra n s is to r in a S O T -3 2 p la stic envelope intended fo r c a r -r a d io output sta g e s. P-N -P com plem ent is BD330. M atched p a irs can be supplied.


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