TIP31F Search Results

T1P31DF

Contextual Info: TIP31F; 31AF TIP31BF; 31CF T1P31DF J SILICON EPITAXIAL POWER TRANSISTORS NPN silicon power transistors in a SOT 186 envelope w ith an electrically insulated mounting base. They are intended fo r use in audio amplifier output stages, general purpose amplifiers, and high-speed

TIP31D

Abstract: TIP31E TIP31F TRANSISTOR D 1978
Contextual Info: TIP31D, TIP31E, TIP31F NPN SILICON POWER TRANSISTORS Copyright 1997, Power Innovations Limited, UK ● 40 W at 25°C Case Temperature ● 3 A Continuous Collector Current ● 5 A Peak Collector Current ● Customer-Specified Selections Available AUGUST 1978 - REVISED MARCH 1997

Contextual Info: TIP31D, TIP31E, TIP31F NPN SILICON POWER TRANSISTORS Copyright @ 1997, Power Innovations Limited, UK_ AUGUST 1978 • REVISED MARCH 1997 • 40 W at 25°C Case Temperature • 3 A Continuous Collector Current • 5 A Peak Collector Current

tip 31

Abstract: c2688 L transistor DA 2688 DA 2688 tip 120 TRANSISTOR equivalent
Contextual Info: "TEXAS INSTR -COPTÒF ^2 »E 0Q3b?ti0 8 9 0 1 7 2 6 TEXAS INSTR <OPTO 62C 3 ó 7 60 TIP 31, TIP31 A , TIP 31B, TIP 31 C , T1P31D, TIP 31 E, TIP31F N-P-N SILICON POWER TRAN SISTO RS D ECEM BER 1970 - R EV ISED O CTOBER 1984 40 W at 2 5 ° C C ase Temperature

Texas Instruments TIP31C

Abstract: c2688 texas instruments tip31a tRANSISTOR c2688 Texas Instruments TIP31 TIP31c Texas Instruments TIP31C P31A br c2688 TIP31A
Contextual Info: TEXAS INSTR -COPTO} ^5 DE | ô cl t i ] , 75 t i 89 S 1 7 2 6 TEXAS INSTR <OPTO 62C DQBbTfcin 36760 TIP31, TIP31A, TIP31B, TIP31C, TIP31D, TIP31E, TIP31F N-P-N SILICON POWER TRANSISTORS D E C EM B E R 1 9 7 0 - R EV ISED O C T O B E R 1 9 8 4 • 4 0 W a t 2 5 ° C Case Temperature

Contextual Info: TIP31D, TIP31E, TIP31F NPN SILICON POWER TRANSISTORS Copyright 1997, Power Innovations Limited, UK • 40 W at 25°C Case Temperature • 3 A Continuous Collector Current • 5 A Peak Collector Current • Customer-Specified Selections Available AUGUST 1978 - REVISED MARCH 1997

31AF

Abstract: 31df TIP32AF T1P31 31DF 4 2B T1P31C TIP31 PNP Transistor TIP31BF TIP31F TIP32BF
Contextual Info: TIP31F; 31AF TIP31BF; 31 CF T1P31DF SILICON EPITAXIAL POWER TRANSISTORS NPN silicon power transistors in a S O T 186 envelope w ith an electrically insulated mounting base. They are intended fo r use in audio am plifier output stages, general purpose amplifiers, and high-speed

TIP32AF

Abstract: 31af 31df transistor tip31 TIP31BF TIP31DF TIP31F TIP32BF TIP32CF TIP32DF
Contextual Info: TIP31F; 31AF TIP31BF; 31CF TIP31DF PHILIPS INTERNATIONAL SfciE D • V 7110Ô5L 00M34Ô2 =}S3 * P H I N T- 3 3 -0 7 S IL IC O N EPITA XIA L PO W E R T R A N S IS T O R S N PN silicon power transistors in a S O T 1 8 6 envelope with an electrically insulated mounting base.

TRANSISTOR D 1978

Abstract: TIP31E TIP31D TIP31F
Contextual Info: TIP31D, TIP31E, TIP31F NPN SILICON POWER TRANSISTORS ● 40 W at 25°C Case Temperature ● 3 A Continuous Collector Current ● 5 A Peak Collector Current ● Customer-Specified Selections Available TO-220 PACKAGE TOP VIEW B 1 C 2 E 3 Pin 2 is in electrical contact with the mounting base.

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

2N5657 equivalent

Abstract: 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5655 2N5656 2N5657 Plastic NPN Silicon High-Voltage Power Transistor . . . designed for use in line–operated equipment such as audio output amplifiers; low–current, high–voltage converters; and AC line relays.

MJE494

Abstract: 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD157 BD158 BD159 Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTORS NPN SILICON 250 – 300 – 350 VOLTS

2SD669 equivalent

Abstract: BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6609 See 2N3773 Darlington Silicon Power Transistors 2N6667 2N6668 . . . designed for general–purpose amplifier and low speed switching applications. • High DC Current Gain — hFE = 3500 (Typ) @ IC = 4 Adc • Collector–Emitter Sustaining Voltage — @ 200 mAdc

2SC495

Abstract: NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF6107 Power Transistor For Isolated Package Applications PNP SILICON POWER TRANSISTOR 7 AMPERES 70 VOLTS 34 WATTS Designed for general–purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink

D42C5

Abstract: transistor bc 647 2N5302 EB pin out TRANSISTOR tip2955 bs170 replacement 2sc141 BU108 bc 658 Motorola transistors MJE3055 TO 127 MC7812 TO-220
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  Data Sheet SCANSWITCH Designer's MJE16204 NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors The MJE16204 is a state–of–the–art SWITCHMODE bipolar power transistor. It is

mje521 equivalent

Abstract: BU108 2N3055 plastic 2N6488 MOTOROLA Motorola transistors MJE3055 TO 127 3904 Transistor BDX54 tip122 tip127 audio amp BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE521 Plastic Medium-Power NPN Silicon Transistor 4 AMPERE POWER TRANSISTOR NPN SILICON 40 VOLTS 40 WATTS . . . designed for use in general–purpose amplifier and switching circuits. Recommended for use in 5 to 10 Watt audio amplifiers utilizing complementary symmetry

2N3055

Abstract: BU108 AN415A MJE2955T ST BDX54 2n3055 audio amplifier application note BU326 BU100 mje13005 BDV64
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP MJE2955T * NPN MJE3055T * Complementary Silicon Plastic Power Transistors . . . designed for use in general–purpose amplifier and switching applications. *Motorola Preferred Device • DC Current Gain Specified to 10 Amperes

2N5631 equivalent

Abstract: 2N5630 "cross-reference" Chomerics BU108 2SA1046 tip122 tip127 audio amp BU326 BU100 2sd313 equivalent NPN/TIP42C as regulator
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N5630 High-Voltage Ċ High Power Transistors 2N5631 PNP 2N6030 . . . designed for use in high power audio amplifier applications and high voltage switching regulator circuits. • High Collector Emitter Sustaining Voltage —

BD179-10 equivalent

Abstract: BU108 2SA1046 2SC7 BDX54 BUX98A BU326 BU100 bul1
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD179 BD179-10 Plastic Medium Power Silicon NPN Transistor 3.0 AMPERES POWER TRANSISTORS NPN SILICON 80 VOLTS 30 WATTS . . . designed for use in 5.0 to 10 Watt audio amplifiers and drivers utilizing complementary or quasi complementary circuits.

sec tip41c

Abstract: MJE493 2SC1419 2sc3281 2n3055 audio output circuit BDW93 MJ1000 BDW83 buv98a cross reference 2SC1943
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJL3281A* PNP MJL1302A*  Data Sheet Designer's Complementary NPN-PNP Silicon Power Bipolar Transistor *Motorola Preferred Device 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 200 WATTS • The MJL3281A and MJL1302A are PowerBase power transistors for high power

TRANSISTOR BC 384

Abstract: BU108 bd139 equivalent transistor 2N3055 equivalent RCA1C03 transistor Bc 574 BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF47 High Voltage Power Transistor Isolated Package Applications NPN SILICON POWER TRANSISTOR 1 AMPERE 250 VOLTS 28 WATTS Designed for line operated audio output amplifiers, switching power supply drivers and other switching applications, where the mounting surface of the device is required

Transistor 2sC1060

Abstract: 2SD460 2SC143 All similar transistor 2sa715 BU108 MJ410 2SD404 BD241C BUT56 BDW59
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN BDW42* Darlington Complementary Silicon Power Transistors PNP BDW46 BDW47* . . . designed for general purpose and low speed switching applications. • High DC Current Gain – hFE = 2500 typ. @ IC = 5.0 Adc. • Collector Emitter Sustaining Voltage @ 30 mAdc:

MJ11017 equivalent

Abstract: BU108 MJ11021 BU326 BU100 MJE3055T
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP MJ11017 MJ11021* NPN MJ11018* Complementary Darlington Silicon Power Transistors . . . designed for use as general purpose amplifiers, low frequency switching and motor control applications. MJ11022 • High dc Current Gain @ 10 Adc — hFE = 400 Min All Types

BU108

Abstract: transistor Bc 574 2n6107 MOTOROLA 2SC1943 MJ3055 to220 2SC1419 BU326 BU100 MJ*15033 2N6277
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUV21 SWITCHMODE Series NPN Silicon Power Transistor 40 AMPERES NPN SILICON POWER METAL TRANSISTOR 200 VOLTS 250 WATTS . . . designed for high speed, high current, high power applications. • High DC current gain: hFE min. = 20 at IC = 12 A