BD158 Search Results

MJE494

Abstract: 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD157 BD158 BD159 Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTORS NPN SILICON 250 – 300 – 350 VOLTS

bd157

Abstract: d159
Contextual Info: rZ 7 SGS-THOMSON Ä TI « E Udra «! BD157/8/9 LOW POWER FAST SWITCHING DESCRIPTIO N The BD157, BD158 and BD159 are silicon epitaxial planar NPN transistors in TO-126 plastic package, intended for applications in low power linear and switching. ABSO LU TE MAXIM UM RATINGS

BD158

Abstract: bd159 BD157
Contextual Info: BD157/158/159 NPN EPITAXIAL SILICON TRANSISTOR LOW POWER FAST SWITCHING OUTPUT STAGES FOR T.V. RADIO AUDIO OUTPUT AMPLIFIERS TO -126 ABSOLUTE MAXIMUM RATINGS Characteristic Collector Base Voltage : BD157 : BD158 : BD159 Collector Emitter Voltage: BD157 : BD158

Contextual Info: BD157, BD158 BD157,158 NPN PLASTIC POWER TRANSISTORS Low Power Fast Switching, Output Stages for TV Radio and Audio Output Amplifiers PIN CONFIGURATION 1. EMITTER 2. COLLECTOR 3. BASE "V FT1_ Q1M Æ - 7.8 B 10.5 10.8 C 2.4 2.7 0.7 0.9 F -M JL- J eU L-g—

BD158

Abstract: BD159 bd157
Contextual Info: BD157/158/159 NPN EPITXIAL SILICON TRANSISTOR LOW POWER FAST SWITCHING OUTPUT STAGES FOR T.V RADIO AUDIO OUTPUT AMPLIFIERS ABSOLUTE MAXIMUM RATINGS C haracteristic Collector Base Voltage : BD157 Symbol Rating VcBO : BD158 : BD159 Collector Emitter Voltage : BD157

BD159

Contextual Info: BD157/158/159 NPN EPITXIAL SILICON TRANSISTOR LOW POWER FAST SWITCHING OUTPUT STAGES FOR T.V RADIO AUDIO OUTPUT AMPLIFIERS TO-126 ABSOLUTE MAXIMUM RATINGS Characteristic Collector Base Voltage : BD157 : BD158 : BD159 Collector Emitter Voltage : BD157 : BD158

deflexion

Abstract: B0158 bd157 BD NPN transistors BD 157
Contextual Info: BD 157 BD158 BD 159 NPN SILICON TRANSISTORS, TRIPLE DIFFUSED MESA TRANSISTORS S ILIC IU M NPN, MESA TRIPLE DIFFUSES PR E LIM IN A R Y DATA N O TIC E P R E LIM IN A IR E BD 157 to BD 159 transistors are designed for class A audio output stages in main operated

BD157

Abstract: BD158
Contextual Info: IS / IECQC 700000 IS / IECQC 750100 IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN PLASTIC MEDIUM POWER SILICON TRANSISTORS BD157, BD158 TO-126 Designed For Power Output Stages for Television, Radio, Phonograph And

transistor BD 325

Abstract: transistor BD 240 transistor bd 375 transistor BD 157 Motorola Bipolar Power Transistor Data BD157 TRANSISTOR 158
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD157 BD158 BD159 Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTORS NPN SILICON 2 5 0 -3 0 0 -3 5 0 VOLTS

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN PLASTIC MEDIUM POWER SILICON TRANSISTORS BD157, BD158 TO-126 Designed For Power Output Stages for Television, Radio, Phonograph And Other Consumer Applications.

BD159

Abstract: BD157 BD158 0001 TRANSISTOR B0158
Contextual Info: BD157/158/159 NPN EPITXIAL SILICON TRANSISTOR LOW POWER FAST SWITCHING OUTPUT STAGES FOR T.V RADIO AUDIO OUTPUT AMPLIFIERS ABSOLUTE MAXIMUM RATINGS C haracteristic Rating Unit 275 V : BD158 325 V : BD159 375 V 250 V : BD158 300 V : BD159 350 V 5 V A C ollector Base Voltage

JE350

Abstract: je180 MJ13004 TP33C BD325 JE172 BDX48 JE340 bd160 BUT55
Contextual Info: INDUSTRY STANDARD SGS-THOMSON BD135 BD136 BD137 BD138 BD139 BD135 BD136 BD137 BD138 BD139 BD140 BD142 BD144 BD157 BD158 BD140 BD159 BD160 BD165 BD166 BD167 BD159 SGS-THOMSON PAGE NEAREST BD157 BD158 2N5878 BD437 BD438 BD439 BD440 BD441 BD442 BD237 BD238 BD168

BD158

Abstract: BD157
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN PLASTIC MEDIUM POWER SILICON TRANSISTORS BD157, BD158 TO-126 Designed For Power Output Stages for Television, Radio, Phonograph And Other Consumer Applications.

bd157

Contextual Info: BD157/158/159 NPN EPITXIAL SILICO N TRANSISTO R LOW POWER FAST SWITCHING OUTPUT STA G ES FOR T.V RADIO AUDIO OUTPUT AMPLIFIERS TO-126 ABSOLUTE MAXIMUM RATINGS Characteristic Collector Base Voltage : BD157 : BD158 : BD159 Collector Emitter Voltage : BD157 : BD158

Contextual Info: _ • r r r 755q537 s g s - th o m ^ 7# Dosaaa? t jrT r'S 3 '0 °i _ s o n « t H S t m i C T « ! _ _ B D 1 5 7 / 8 / 9 S G S-THOMSON 3ÜE » LOW POWER FAST SWITCHING DESC RIPTIO N The BD157, BD158 and BD159 are silicon epitaxial

Contextual Info: BD157/158/159 NPN EPITXIAL SILICON TRANSISTOR LOW POWER FAST SWITCHING OUTPUT STAGES FOR T.V RADIO AUDIO OUTPUT AMPLIFIERS ABSOLUTE MAXIMUM RATINGS C haracteristic Rating Unit 275 V : BD158 325 V : BD159 375 V 250 V : BD158 300 V : BD159 350 V 5 V A C ollector Base Voltage

BD157

Abstract: BD158
Contextual Info: BD157, B0158 BDI5 7 ,158 NPN PLASTIC POWER TRANSISTORS Low Power Fast Switching, Output Stages for TV Radio and Audio Output Amplifiers PIN CONFIGURATION 1. EMITTER 2. COLLECTOR 3. BASE DIM MIN. MAX. A 7.4 7.8 B 10.5 10.8 C 2.4 2.7 D 0 .7 0.9 E F 2 .2 5 TYP.

fjaf6812

Abstract: tip41 darlington fjaf6920 BUT12(A)F KSA1010 transistor bd140-15 bu408 equivalent FJL6920 equivalent fjl6820 FJL6920
Contextual Info: Discrete Bipolar Power Transistor – General Purpose Part Number IC A VCEO (V) VCBO (V) VEBO (V) PC (W) hFE VCE (sat) Min Max @ IC (A) Typ (V) Max (V) TO-126 NPN Configuration KSC2682 0.1 180 180 5 8 100 320 0.01 0.12 0.5 KSC3502 0.1 200 200 5 5 40 320

BJT BD139

Abstract: TIP416 ksh200 equivalent BD243 ksh50 power BJT BD242 tip426 BD53 kse13003
Contextual Info: Discrete Power BJT General Purpose Products IC A VCEO (V) VCBO (V) VEBO (V) hFE PC (W) VCE (sat) Min Max @ IC (A) Typ (V) Max (V) TO-126 NPN Configuration KSC2682 0.1 180 180 5 8 100 320 0.01 0.12 0.5 KSC3502 0.1 200 200 5 5 40 320 0.01 - 0.6 KSC2258 0.1

Contextual Info: a P R E L IM IN A R Y Advanced Micro Devices Am79C830A FORMAC Plus DISTINCTIVE CHARACTERISTICS • Implements the FDDI Media Access Control MAC layer protocol for ISO standard 9314-2 ■ Pointers to claim and beacon frames ■ Buffer-memory clock frequency range:

transistor mje29

Abstract: MJE30 bd139 bd140 MJE29 2N6407 transistor bd135-16 BD234 transistor BD140 BD136-16 BF459
Contextual Info: Silicon Power - Plastic This Selector Guide is to help the designer choose the best silicon power transistor for his new equipment. It is a comprehensive listing of the industry's most complete line of PNP and NPN silicon power transistors. Motorola has the production capability and flexib ility to supply devices especially tailored to specific

transistor mosfet buv18a

Abstract: M143206EVK MMBF4856 lm358 IC 68hc05sc24 telephone line interface circuit bc517 MC68B54 XC68HC705P9 MPX100ap BUV18A
Contextual Info: Device Index and Subject Index In Brief . . . Page Device Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.1–1 General Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–1 Subject Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–9

BUV48I

Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
Contextual Info: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable

Am79C82

Contextual Info: P R E L IM IN A R Y Advanced Micro Devices Am79C830 FORMAC Plus DISTINCTIVE CHARACTERISTICS Implements the FDDI Media Access Control MAC layer protocol for ISO standard 9314-2 • Pointers to claim and beacon frames ■ Supports transmit linked-list addressing