BD140 Search Results

BD138 coil

Abstract: BD135 BD136 BD138 BD140
Contextual Info: BD136, BD138, BD140 BD136, 138, 140 PNP PLASTIC POWER TRANSISTORS Complementary B D 135,137, 139 Medium Power Linear and Switching Applications PIN CONFIGURATION 1. EMITTER 2. COLLECTOR 3. BASE MIN. DIM MAX. A B 7.4 10.5 C 2.4 2 .7 D 0.7 0.9 2.25 TYP. E F

BD138G

Abstract: BD136 BD136 pin bd135 to-126 BD139 PIN DATA power transistor bd136 QW-R204-013 NPN Transistor Characteristics bd136 BD140l
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD BD136-138-140 PNP EPITAXIAL SILICON TRANSISTOR PNP SILICON TRANSISTOR „ DESCRIPTION The UTC BD136/BD138/BD140 are silicon epitaxial planer PNP transistor, designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits.

BD140

Abstract: BD136 BD138 BD140 circuits bd138 hfe BD136 pin bd136 hfe BD136-16 BD140-10 BD140-16
Contextual Info: SavantIC Semiconductor Product Specification BD136 BD138 BD140 Silicon PNP Power Transistors DESCRIPTION •With TO-126 package ·High current ·Complement to type BD135/137/139 APPLICATIONS ·Driver stages in high-fidelity amplifiers and television circuits

Contextual Info: BD135/137/139 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • C om plem ent to BD136, BD 138 and BD140 respectively ABSOLUTE MAXIMUM RATINGS C haracteristic C ollector Base Voltage Sym bol : BD135 Rating Unit 45 V : BD137

R047F

Abstract: oms 450 RD51P 104 csk R075E RD47E RD47F RD47M RD47P RD51F
Contextual Info: — A M RD47E RD47F RD47FM RD47M RD47P RD51E RD51F RD51FM RD51P RD56E RD56F RD56P RD62E RD62F RD62P RD68E RD68F RD68P RD75E RD75F RD75P RD82E RD82F RD82P RD91S RD91P RD100E RDIOOP RD110E RD110P RD12GE RD120P RD130E BD140E RD150E RD160E RD170E RD180E RD190E

BD139

Abstract: BD139 N bd137 BD139-25 BD139 p BD135-BD137-BD139 bd135 N BD139 silicon transistors
Contextual Info: MCC BD135 BD137 BD139
  omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# HDWXUHV • • Power Transistors NPN Silicon 45,60,80 Volts DC Current Gain - hFE = 40 Min) @IC = 150mAdc Complementary with BD136, BD138, BD140

transistor BD139 N

Abstract: bd139 Complement
Contextual Info: KSD135/137/139 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • Complement to BD136 and BD140 respectively ABSOLUTE MAXIMUM RATINGS C haracteristic Collector Base Voltage Symbol : BD135 VcB O Rating Unit 45 V : BD137 60 V

BD139 application

Abstract: BD139 N bd139 BD135 BD139 p of bd139 bd135 N BD139-25 BD136
Contextual Info: MCC BD135 BD137 BD139
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components HDWXUHV • • DC Current Gain - hFE = 40 Min) @IC = 150mAdc Complementary with BD136, BD138, BD140

BD140 npn

Abstract: BD140 philips BD139 NPN transistor TRANSISTOR NPN BD140 BD140 application circuits circuits transistor BD139 N bd135 n bd140 equivalent transistor BD136 BD140 circuits
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D100 BD136; BD138; BD140 PNP power transistors Product specification Supersedes data of 1997 Mar 26 1999 Apr 12 Philips Semiconductors Product specification PNP power transistors BD136; BD138; BD140 PINNING

bd139

Abstract: BD139 p BD135-BD137-BD139 bd135 N BD139 N BD139-25 BD136 bd137
Contextual Info: MCC BD135 BD137 BD139
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# HDWXUHV • • Power Transistors NPN Silicon 45,60,80 Volts DC Current Gain - hFE = 40 Min) @IC = 150mAdc Complementary with BD136, BD138, BD140

BD139

Abstract: BD136 transistors bd136 bd136 N
Contextual Info: Philips Semiconductors Product specification PNP power transistors BD136; BD138; BD140 FEATURES PINNING • High current max. 1.5 A PIN • Low voltage (max. 80 V). 1 e m itte r 2 collector, connected to metal part of m ounting surface 3 base APPLICATIONS

BD139H

Contextual Info: SEMICONDUCTOR BD139 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. A B FEATURES ・High Current. Max. : 1.5A ・DC Current Gain : hFE=40Min. @IC=0.15A ・Complementary to BD140. D C E F G H DIM A B C D E F G H J K L M N O P J

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors BD136/BD138/BD140 TO-126 TRANSISTOR PNP FEATURES •High Current(-1.5A) 1. EMITTER 2. COLLECTOR ·Low Voltage(-80V) 3. BASE 123 MAXIMUM RATINGS* TA=25℃ unless otherwise noted

bd136g

Abstract: bd140 bd series of pnp transistor BD136 BD140 pnp transistor bd 142 transistor
Contextual Info: BD136, BD138, BD140 Plastic Medium Power Silicon PNP Transistor This series of plastic, medium−power silicon PNP transistors are designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. http://onsemi.com Features

BD138

Contextual Info: BD136 BD138/BD140 PNP SILICON TRANSISTORS • ■ STMicroelectronics PREFERRED SALESTYPES PNP TRANSISTOR DESCRIPTION The BD136, BD138 and BD140 are silicon Epitaxial Planar PNP transistors mounted in Jedec SOT-32 plastic package, designed for audio amplifiers

BD139 N

Abstract: BD135,BD137,BD139 BD139 bd135 N BD137 BD135-BD137-BD139 BD135 power transistor bd135 power transistor bd139 power transistor bd137
Contextual Info: BD135 BD137 BD139 Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 HDWXUHV • • Power Transistors NPN Silicon 45,60,80 Volts DC Current Gain - hFE = 40 Min) @IC = 150mAdc Complementary with BD136, BD138, BD140

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD BD136-138-140 PNP EPITAXIAL SILICON TRANSISTOR PNP SILICON TRANSISTOR  DESCRIPTION 1 The UTC BD136/BD138/BD140 are silicon epitaxial planer PNP transistor, designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits.

BD140 pnp transistor

Abstract: bd140 BD136 BD139 BD140 01 of ic BD140 bd136 hfe bd138 hfe of transistor BD140 power transistor bd136
Contextual Info: BD136/BD138/BD140 PNP TO-126 Transistor TO-126 2.500 1.100 2.900 1.500 7.400 7.800 1. EMITTER 3.900 4.100 3.000 3.200 10.60 0 11.00 0 2. COLLECTOR 0.000 0.300 2.100 2.300 3. BASE 3 2 1.170 1.370 1 Features — High Current(-1.5A) — Low Voltage(-80V) 15.30 0

BD139 N

Abstract: TRANSISTOR TC 137 BD135 LB 137 transistor power transistor bd135 BD139 BD139 NPN transistor bd135 N BD135 NPN transistor TRANSISTOR NPN BD139
Contextual Info: BD135/137/139 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • C om plem ent to BD136, BD 138 and BD140 respectively ABSOLUTE MAXIMUM RATINGS Characteristic Sym bol C ollector Base Voltage :B D 1 3 5 : BD137 : BD139 C ollector E m itter V o lta g e : BD135

to225aa

Abstract: TO-225AA pin diagram BD140 Power Transistors TO-225aa Case to.225aa 225AA to225aa case 77 BD136 BD136G BD138G
Contextual Info: BD136, BD138, BD140 Plastic Medium Power Silicon PNP Transistor This series of plastic, medium−power silicon PNP transistors are designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. Features • Pb−Free Packages are Available*

BD139

Abstract: BD140 BD139 application BD140 application circuits circuits BD139 NPN transistor BD136 BD135 BD140 npn TRANSISTOR NPN BD140 of ic BD140
Contextual Info: BD135 - BD136 BD139 - BD140 Complementary low voltage transistor Features • Products are pre-selected in DC current gain Application ■ General purpose 3 Description 1 SOT-32 These epitaxial planar transistors are mounted in the SOT-32 plastic package. They are designed

BD139 N

Abstract: BD139 bd137 BD135,BD137,BD139 bd135 N BD135 power transistor bd135 BD135-BD137-BD139 BD139 p BD139 silicon transistors
Contextual Info: MCC BD135 BD137 BD139
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# HDWXUHV • • Power Transistors NPN Silicon 45,60,80 Volts DC Current Gain - hFE = 40 Min) @IC = 150mAdc Complementary with BD136, BD138, BD140

bd139

Abstract: transistor BD139 N TRANSISTOR NPN BD140 BD140
Contextual Info: / = 7 SCS-THOMSON B D 136 B D 13 8 /B D 1 4 0 M im i© T ri ö iO © S PNP SILICON TRANSISTORS • SGS-THOMSON PREFERRED SALESTYPES . PNP TRANSISTOR DESCRIPTION The BD136, BD138 and BD140 are silicon epitaxial planar PNP transistors in Jedec SOT-32 plastic package, designed for audio amplifiers

BD135

Abstract: BD135 BD137 BD139
Contextual Info: BD135 / BD137 / BD139 NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES TO-126 High current Complement to BD136, BD138 and BD140 1Emitter 2Collector 3Base CLASSIFICATION OF hFE 1