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Contextual Info: SEMICONDUCTOR BD135 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. A B FEATURES ・High Current. Max. : 1.5A ・Low Voltage (Max. : 45V) ・DC Current Gain : hFE=40Min. @IC=0.15A ・Complementary to BD136. D C E F G H DIM A B

BD139H

Contextual Info: SEMICONDUCTOR BD139 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. A B FEATURES ・High Current. Max. : 1.5A ・DC Current Gain : hFE=40Min. @IC=0.15A ・Complementary to BD140. D C E F G H DIM A B C D E F G H J K L M N O P J

BD135C

Contextual Info: SEMICONDUCTOR BD136 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. A B FEATURES ・High Current. Max. : -1.5A ・Low Voltage (Max. : -45V) ・DC Current Gain : hFE=40Min. @IC=-0.15A ・Complementary to BD135. D C E F G H DIM

Contextual Info: 2SC3179 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SA1262 100max µA V IEBO VEB=6V 100max µA 6 V V(BR)CEO V 4 A hFE IC=25mA 60min VCE=4V, IC=1V 40min V IB 1 A VCE(sat) IC=2A, IB=0.2A 0.6max PC 30(Tc=25°C) W fT VCE=12V, IE=–0.2A

Contextual Info: Spec Sheet INDUCTORS Radial Leaded Inductors LHL10TB820K Features Item Summary 82 H ±10% , 1.4A, 40min, Leaded Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 500pcs Products characteristics table External Dimensions 14(max)x11(max)

Contextual Info: Spec Sheet INDUCTORS Radial Leaded Inductors LHL08TB1R0N Features Item Summary 1.0 H ±30% , 4.7A, 40min, Leaded Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 1000pcs Products characteristics table External Dimensions 9.5(max)x9(max)

Contextual Info: Spec Sheet INDUCTORS Radial Leaded Inductors LHL10TB333J Features Item Summary 33000 H ±5% , 0.056A, 40min, Leaded Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 500pcs Products characteristics table External Dimensions 14(max)x11(max)

Contextual Info: Spec Sheet INDUCTORS Radial Leaded Inductors LHL13TB221K Features Item Summary 220 H ±10% , 1.3A, 40min, Leaded Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 500pcs Products characteristics table External Dimensions 17(max)x14(max)

Contextual Info: Spec Sheet INDUCTORS Radial Leaded Inductors LHL08TB470K Features Item Summary 47 H ±10% , 1.2A, 40min, Leaded Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 1000pcs Products characteristics table External Dimensions 9.5(max)x9(max)

Contextual Info: Spec Sheet INDUCTORS Radial Leaded Inductors LHL10TB393J Features Item Summary 39000 H ±5% , 0.053A, 40min, Leaded Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 500pcs Products characteristics table External Dimensions 14(max)x11(max)

Contextual Info: Spec Sheet INDUCTORS Radial Leaded Inductors LHL08TB390K Features Item Summary 39 H ±10% , 1.3A, 40min, Leaded Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 1000pcs Products characteristics table External Dimensions 9.5(max)x9(max)

Contextual Info: Spec Sheet INDUCTORS Radial Leaded Inductors LHL10TB221K Features Item Summary 220 H ±10% , 0.75A, 40min, Leaded Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 500pcs Products characteristics table External Dimensions 14(max)x11(max)

Contextual Info: Spec Sheet INDUCTORS Radial Leaded Inductors LHL08TB4R7M Features Item Summary 4.7 H ±20% , 3A, 40min, Leaded Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 1000pcs Products characteristics table External Dimensions 9.5(max)x9(max)

LHL08TB

Contextual Info: Spec Sheet INDUCTORS Radial Leaded Inductors LHL08TB330K Features Item Summary 33 H ±10% , 1.4A, 40min, Leaded Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 1000pcs Products characteristics table External Dimensions 9.5(max)x9(max)

BD139H

Abstract: power transistor bd139 data sheet of bd139 BD139 BD140 transistor BD139 N BD139 p
Contextual Info: SEMICONDUCTOR BD139 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. A B FEATURES ・High Current. Max. : 1.5A ・DC Current Gain : hFE=40Min. @IC=0.15A ・Complementary to BD140. D C E F G H DIM A B C D E F G H J K L M N O P J

Contextual Info: Spec Sheet INDUCTORS Radial Leaded Inductors LHL08TB1R5M Features Item Summary 1.5 H ±20% , 4.4A, 40min, Leaded Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 1000pcs Products characteristics table External Dimensions 9.5(max)x9(max)

transistor BD139 N

Abstract: bd139m
Contextual Info: BD139 SEM ICONDUCTOR TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. FEATURES • High Current. M ax .: 1.5A • DC Current Gain : hFE=40Min. @IC=0.15A • Complementary to BD140. 17 DIM MILLIMETERS A 8.3 MAX B 5.8 0.7 c <t>3.2±O.I

Contextual Info: Spec Sheet INDUCTORS Radial Leaded Inductors LHL08TB8R2M Features Item Summary 8.2 H ±20% , 2.5A, 40min, Leaded Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 1000pcs Products characteristics table External Dimensions 9.5(max)x9(max)

Contextual Info: Spec Sheet INDUCTORS Radial Leaded Inductors LHL13TB472J Features Item Summary 4700 H ±5% , 0.28A, 40min, Leaded Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 500pcs Products characteristics table External Dimensions 17(max)x14(max)

Contextual Info: Spec Sheet INDUCTORS Radial Leaded Inductors LHL10TB473J Features Item Summary 47000 H ±5% , 0.05A, 40min, Leaded Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 500pcs Products characteristics table External Dimensions 14(max)x11(max)

Contextual Info: Spec Sheet INDUCTORS Radial Leaded Inductors LHL08TB3R3M Features Item Summary 3.3 H ±20% , 3.2A, 40min, Leaded Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 1000pcs Products characteristics table External Dimensions 9.5(max)x9(max)

2SC5370

Abstract: FM20
Contextual Info: 2SC5370 Silicon NPN Epitaxial Planar Transistor 40 V IEBO VEBO 7 V V BR CEO IC 12 A Ratings Unit VCB=60V 10max µA Conditions VEB=7V 10max µA IC=25mA 40min V hFE VCE=2V, IC=6A 70min∗ IB 3 A VCE(sat) IC=6A, IB=0.3A 0.3max PC 30(Tc=25°C) W VBE(sat) IC=6A, IB=0.3A

2SA1262

Abstract: 2SC3179
Contextual Info: 2SA1262 Silicon PNP Epitaxial Planar Transistor Complement to type 2SC3179 2SA1262 Unit V ICBO VCB=–60V –100max µA V IEBO VEB=–6V –100max µA –6 V V(BR)CEO IC=–25mA –60min V –4 A hFE VCE=–4V, IC=–1A 40min VCEO –60 VEBO IC 10.2±0.2

2SC3179

Abstract: 2SA1262
Contextual Info: 2SC3179 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SA1262 ICBO VCEO 60 V IEBO VEBO 6 V V(BR)CEO IC 4 A hFE Symbol Conditions 2SC3179 Unit VCB=80V 100max µA VEB=6V 100max µA IC=25mA 60min V VCE=4V, IC=1V 40min IB 1 A VCE(sat) IC=2A, IB=0.2A