120TYP Search Results

OM7611ST

Abstract: OM7611/BGA2776598
Contextual Info: OM7611ST ISOLATED HERMETIC TO-257AA ADJUSTABLE VOLTAGE REGULATORS Three Terminal, Adjustable Voltage, 3.0 Amp Precision Negative Regulators In Hermetic JEDEC TO-257AA Package FEATURES • • • • • • Isolated Hermetic Package, JEDEC TO-257AA Outline

240v automatic change over switch circuit diagram

Abstract: EN61000-4-2 RTW03-12R RTW03-12RC RTW05-10R RTW12-4R3 RTW15-3R5 RTW28-1R8 RTW48-1R1 led L-612
Contextual Info: 1/19 Conformity to RoHS Directive AC Input Single Output, General-Purpose, UL/C-UL/TÜV Approved R Series RTW(50 to 300W) This is an ultra-thin, high-performance standard power supply that is both energy efficient and environmentally friendly. Utilizing TDK’s

RTW24-6R3C

Abstract: RTW05-10RC RTW24-2R2C RTW24-4R2L rtw30 1R1C RTW05-20RC rtw24-13rh RTW28-5R4C RTW12-8R4L
Contextual Info: 1/19 AC入力電源 単一出力・長寿命UL/C-UL/TÜV認可品 RoHS 指令対応製品 R シリーズ RTW（50 ~ 300W） 省資源と環境に配慮した超薄型高性能標準電源です。TDK 独自の素材、実装、ノイズ対策、熱解析シュミレーション技術で、当社の従

2SC4883A

Abstract: 2SC4883 FM20 DSA0016510
Contextual Info: 2SC4883/4883A Silicon NPN Epitaxial Planar Transistor Complement to type 2SA1859/A Application : Audio Output Driver and TV Velocity-modulation •Absolute maximum ratings (Ta=25°C) (Ta=25°C) IC 2 A V(BR)CEO 180min 150min IC=10mA IB 1 A hFE VCE=10V, IC=0.7A

2SD2560

Abstract: 2SB1647 DSA0016513
Contextual Info: Equivalent circuit 2SD2560 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1647 100max µA V IEBO VEB=5V 100max µA V V(BR)CEO A hFE IB 1 A PC 130(Tc=25°C) 150min 5000min∗ VCE(sat) IC=10A, IB=10mA 2.5max W VBE(sat) IC=10A, IB=10mA

2SD2562

Abstract: 2sb1649
Contextual Info: Equivalent circuit 2SD2562 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1649 100max µA V IEBO VEB=5V 100max µA V 150min 5000min∗ 1 A VCE(sat) IC=10A, IB=10mA 2.5max PC 85(Tc=25°C) W VBE(sat) IC=10A, IB=10mA 3.0max V Tj 150 °C

STANAG-3910

Abstract: 01CO-O23F STANAG 3838
Contextual Info: BOB BUS-61559 SERIES ILC DATA DEVICE CORPORATION«— MIL-STD-1553B NOTICE 2 ADVANCED INTEGRATED MUX HYBRIDS with ENHANCED RT FEATURES AIM-HY’er DESCRIPTION D D C’s BUS-61559 series o f Ad­ vanced Integrated Mux Hybrids with en­ h anced R T F e a tu re s (A IM -H Y ’er)

BH-S5798

Abstract: 530-Max
Contextual Info: ISDN S-INTERFACE ISOLATION TRANSFORMER P/N: BH-S5798 ! ! SURFACE MOUNT, DUAL MEET THE PULSE WAVEFORM TEMPLATE OF CCITT 1.430 WHEN RECOMMENDED TRANSFORMER AND CHIP PAIR IS USED. 2KVRMS ISOLATION VOLTAGE. EXCELLENT LONGITUDINAL BALANCE REEL TAPE OR TUBE PACKAGING.

2SC4883

Abstract: 2SC4883A 4883A FM20
Contextual Info: 2SC4883/4883A Silicon NPN Epitaxial Planar Transistor Complement to type 2SA1859/A Application : Audio Output Driver and TV Velocity-modulation •Absolute maximum ratings (Ta=25°C) (Ta=25°C) 2SC4883A 2SC4883 Conditions External Dimensions FM20(TO220F)

2SC5370

Abstract: FM20
Contextual Info: 2SC5370 Silicon NPN Epitaxial Planar Transistor 40 V IEBO VEBO 7 V V BR CEO IC 12 A Ratings Unit VCB=60V 10max µA Conditions VEB=7V 10max µA IC=25mA 40min V hFE VCE=2V, IC=6A 70min∗ IB 3 A VCE(sat) IC=6A, IB=0.3A 0.3max PC 30(Tc=25°C) W VBE(sat) IC=6A, IB=0.3A

2SD2560

Abstract: 2SB1647 2sd25
Contextual Info: Equivalent circuit 2SD2560 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1647 100max µA V IEBO VEB=5V 100max µA V V(BR)CEO A hFE IB 1 A PC 130(Tc=25°C) Tj 150 –55to+150 °C Tstg IC=30mA 150min VCE=4V, IC=10A 5000min∗ VCE(sat)

d2494

Abstract: c4381 B1625 equivalent transistor a1668 transistor a1695 power transistor D2495 c3852a D1796 power transistor c5287 D2493
Contextual Info: C AU T I O N / WA R N I N G information in this publication has been carefully checked and is believed to be • The accurate; however, no responsibility is assumed for inaccuracies. reserves the right to make changes without further notice to any products herein in

STANAG-3910

Abstract: B-2203 RJ-61 01C0-023F
Contextual Info: I L C DATA D E V I C E -CORP bSE D BUS-61559 SERIES u iis jia ILC DATA DEVICE CORPORATION _ APPROX. 1/2 ACTUAL SIZE IDDC HbTÔTbT QDDÛÔ3S TTB MIL-STD-1553B NOTICE 2 ADVANCED INTEGRATED MUX HYBRIDS with ENHANCED RT FEATURES AIM-HY’er DESCRIPTION

LT1083

Abstract: OM183SC OM184SC OM185ST OM186ST 0M183SC
Contextual Info: OM183SC OM185ST OM184SC OM186ST 7.5A, 5A, 3A, 1.5A LOW DROPOUT POSITIVE ADJUSTABLE REGULATORS T h re e T erm in a l A d ju s ta b le Low D ro p o u t T O -2 5 7 /T O -2 5 8 P o sitive V oltage R eg u lato rs FEATURES • Operates Down to 1V Dropout, 1.5V @ Max. Current

49c410

Abstract: SO24 Package 74FCT810T 74FCT2821 74FCT388915T 29FCT52T 74FCT534 74FCT543T 74fct651 fct574
Contextual Info: 1994 IDT HIGH-PERFORMANCE LOGIC DATA BOOK ERRATA AND ADDITIONS Integrated Device Technology, Inc. Device 74FCT534 Page 7.13-6 Incorrect On for FCT374 and FCT574, On for FCT534 Should Be On for FCT374 and FCT574, On for FCT534 Description Note 3 polarity error for 534

2SB1648

Abstract: 2SD2561 2sd25
Contextual Info: C Equivalent circuit 2SD2561 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1648 ICBO Unit VCB=150V 100max µA µA 150min V VCE=4V, IC=10A 5000min∗ IC=10A, IB=10mA 2.5max V IC=10A, IB=10mA 3.0max V fT VCE=12V, IE=–2A 70typ MHz COB

BSW66

Abstract: BU208A BSW67 BLY49 BLY49A BLY50 BLY50A BSS15 BSS33 BSS50
Contextual Info: 4flE D • fll331fl7 0 0 0 0 4 5 2 SEMELABL 271 ■ S H L B _ SEMELAB BI POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY HI-REL Type Number BI.YA8A BLYA9 BLYA9A BLY50 BLY50A BSS15 BSS17 BSS33 B.SSAA BSS50 BSS51 DSS52 BSS60 BSS61 BSS62 BSS71 DSS72 BSS73

1505 varistor

Abstract: EZJZV171AA EZJZSV800AA zd varistor panasonic varistor diode PANASONIC VARISTOR high speed panasonic varistor EZJZ0V500AA
Contextual Info: Multilayer Varistors [MLCV] Panasonic Electronic Devices Co., Ltd. Multilayer Multilayer Varistors Varistors [MLCV] [MLCV] for for ESD ESD noise noise EZJZ EZJZseries series,0402/0603/2array 0402/0603/2array EZJP EZJPseries series , 0402 0402 EZJS EZJSseries

c5287 equivalent transistor

Abstract: transistor d2495 c4131 TRANSISTOR REPLACEMENT GUIDE B1560 equivalent Sanken Power Transistors C3679 equivalent shinetsu G746 C3834 transistor c4468 power transistor equivalent 2SC3854 equivalent
Contextual Info: C AU T I O N / WA R N I N G information in this publication has been carefully checked and is believed to be • The accurate; however, no responsibility is assumed for inaccuracies. reserves the right to make changes without further notice to any products herein in

2SD2561

Abstract: DSA0016513 2sb1648
Contextual Info: Equivalent circuit 2SD2561 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1648 ICBO Unit VCB=150V 100max µA 24.4±0.2 100max µA 150min V VCE=4V, IC=10A 5000min∗ IC=10A, IB=10mA 2.5max V IC=10A, IB=10mA 3.0max V fT VCE=12V, IE=–2A

2SC5370

Abstract: FM20 2402 transistor
Contextual Info: 2SC5370 Silicon NPN Epitaxial Planar Transistor 40 V IEBO VEBO 7 V V BR CEO IC 12 A 2SC5370 Unit VCB=60V 10max µA Conditions VEB=7V 10max µA IC=25mA 40min V hFE VCE=2V, IC=6A 70min∗ IB 3 A VCE(sat) IC=6A, IB=0.3A 0.3max PC 30(Tc=25°C) W VBE(sat) IC=6A, IB=0.3A

C3679 equivalent

Abstract: transistor c3835 a1695 power transistor SK C4020 b1686 sk c4467 c4381 SK C5071 transistor c3856 npn C4020 TO220
Contextual Info: POWER TRANSISTORS SANKEN ELECTRIC CO.,LTD. Bulletin No T01EE0 July,2001 C AU T I O N / WA R N I N G information in this publication has been carefully checked and is believed to be • The accurate; however, no responsibility is assumed for inaccuracies.

BFX36

Abstract: bss17 BFX81 BFY64 BFY84 250M BFW44 BFX11 BFX17 BFX29
Contextual Info: SEMELAB LTD 37E D Ö1331Ö7 □□□□051 fl O p tio n 1'^ P o ,a rl,y * V CEO 'C cont hFEo Vce /Ic T039 T077 T039 T039 T039 150 45 40 60 65 50m 0.5 1 0.6 0.6 40min 90min 35min 50m’in 50-200 10/10m 5/lm 1/0.1 10.10m 0.4/10m 60M 130M 250M 100M 0.7 0.5 0.8

Contextual Info: OM76Q4ST ISOLATED HERMETIC TO-257AA ADJUSTABLE VOLTAGE REGULATOR Three Terminal, Adjustable Voltage, 3.0 Amp Precision Positive Regulator In A Hermetic JEDEC TO-257AA Package FEATURES • • • • • • Isolated Hermetic Package, JEDEC TO-257AA Outline